NPN bipolar transistors

NPN transistor, PCB soldering, TO-92, 1A. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 1A. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC517. Collector-emitter voltage Uceo [V]: 30 v. Cutoff frequency ft [MHz]: 200 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, 1.2A, TO-92, TO-92 ( Ammo Pack ), 30 v, 30V. Collector current: 1.2A. Housing: TO-92. Housing (according to data sheet): TO-92 ( Ammo Pack ). Collector/emitter voltage Vceo: 30 v. Collector-Emitter Voltage VCEO: 30V. Semiconductor material: silicon. FT: 200MHz. Minimum hFE gain: 30000. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Spec info: complementary transistor (pair) BC516. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 40V. Maximum saturation voltage VCE(sat): 1V. Vebo: 10V. Type of transistor: NPN transistor. Polarity: NPN. Type: Darlington transistor. Power: 0.625W

NPN transistor, 0.1A, TO-92, TO-92, 65V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 65V. BE diode: no. CE diode: no. Conditioning unit: 2000. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 220. Minimum hFE gain: 90. Ic(pulse): 0.2A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. Spec info: complementary transistor (pair) BC556A. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 80V. Saturation voltage VCE(sat): 0.09V. Vebo: 6V

NPN transistor, TO-92, 0.1A, TO-92, 65V. Housing: TO-92. Collector current: 0.1A. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 65V. RoHS: yes. Resistor B: yes. BE diode: no. BE resistor: PCB soldering. C(in): TO-92. Cost): 6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 450. Minimum hFE gain: 200. Ic(pulse): 0.2A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.5W. Spec info: complementary transistor (pair) BC556B. Assembly/installation: PCB through-hole mounting. Technology: 'Planar Epitaxial transistor'. Type of transistor: NPN. Vcbo: 80V. Saturation voltage VCE(sat): 0.09V. Vebo: 6V

NPN transistor, TO-92, 100mA, 80V, 0.2A. Housing: TO-92. Collector current Ic [A], max.: 100mA. Collector-Emitter Voltage VCEO: 80V. Collector current: 0.2A. Number of terminals: 3. Manufacturer's marking: BC546B. Collector-emitter voltage Uceo [V]: 65V. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Type of transistor: NPN transistor. Polarity: NPN. Power: 0.5W

NPN transistor, 65V, 0.1A, TO-92. Collector-Emitter Voltage VCEO: 65V. Collector current: 0.1A. Housing: TO-92. Type of transistor: NPN transistor. Polarity: NPN. Power: 0.5W

NPN transistor, 100mA, TO-92, TO-92, 65V. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 65V. BE diode: no. Cost): 6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 800. Minimum hFE gain: 420. Ic(pulse): 200mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Planar Epitaxial transistor'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 80V. Saturation voltage VCE(sat): 0.25V. Vebo: 6V

NPN transistor, 100mA, TO-92, TO-92 ( Ammo Pack ), 45V. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92 ( Ammo Pack ). Collector/emitter voltage Vceo: 45V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: general purpose. Max hFE gain: 220. Minimum hFE gain: 90. Ic(pulse): 200mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Spec info: complementary transistor (pair) BC557A. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar-Transistor'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.2V. Vebo: 5V

NPN transistor, PCB soldering, TO-92, 100mA, TO-92, 45V. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 100mA. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-226. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC547B. Collector-emitter voltage Uceo [V]: 45V. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. Spec info: complementary transistor (pair) BC557B. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar-Transistor'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.25V. Maximum saturation voltage VCE(sat): 0.6V. Vebo: 6V

NPN transistor, PCB soldering, TO-92, 100mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 100mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC547B. Collector-emitter voltage Uceo [V]: 45V. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, TO-92, 100mA, TO-92, 45V. Housing: TO-92. Collector current: 100mA. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. RoHS: yes. Resistor B: yes. BE diode: no. BE resistor: PCB soldering. C(in): TO-92. Cost): TO-226. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Function: general purpose. Max hFE gain: 800. Minimum hFE gain: 270. Ic(pulse): 200mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. Spec info: complementary transistor (pair) BC557C. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar-Transistor'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.2V. Vebo: 5V

NPN transistor, PCB soldering, TO-92, 100mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 100mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-226. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC547C. Collector-emitter voltage Uceo [V]: 45V. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering, TO-92, 100mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 100mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC547C. Collector-emitter voltage Uceo [V]: 45V. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering, TO-92, 100mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 100mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC547C. Collector-emitter voltage Uceo [V]: 45V. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, 0.1A, TO-92, TO-92 ( Ammo Pack ), 30 v. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92 ( Ammo Pack ). Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Function: general purpose. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Spec info: complementary transistor (pair) BC558B. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 30 v

NPN transistor, PCB soldering, TO-92, 100mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 100mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC548B. Collector-emitter voltage Uceo [V]: 30 v. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

ROHS: Yes. Housing: TO92. Assembly/installation: THT. Type of transistor: NPN. Polarity: bipolar. Voltage (collector - emitter): 30V. Collector current Ic [A]: 100mA. Gain hfe: 400. Power: 500mW

NPN transistor, PCB soldering, TO-92, 100mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 100mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC548C. Collector-emitter voltage Uceo [V]: 30 v. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, 0.1A, 30 v. Collector current: 0.1A. Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Pd (Power Dissipation, Max): 0.5W. Type of transistor: NPN

NPN transistor, 0.1A, TO-92, TO-92, 30 v. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Pd (Power Dissipation, Max): 0.5W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, PCB soldering, TO-92, 100mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 100mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-226AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BC549C. Collector-emitter voltage Uceo [V]: 30 v. Cutoff frequency ft [MHz]: 250 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, 0.1A, TO-92, TO-92, 45V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. BE diode: no. Cost): 2.5pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: general purpose. Max hFE gain: 450. Minimum hFE gain: 200. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Spec info: complementary transistor (pair) BC560B. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.25V. Maximum saturation voltage VCE(sat): 0.6V. Vebo: 5V

NPN transistor, 0.1A, TO-92, TO-92, 45V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: hFE 420...800 (IC=2mAdc, VCE=5Vdc). Max hFE gain: 800. Minimum hFE gain: 420. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Spec info: complementary transistor (pair) BC560C. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.3V. Vebo: 5V

NPN transistor, TO-92, 0.1A, TO-92 3L (Ammo Pack), 45V. Housing: TO-92. Collector current: 0.1A. Housing (according to data sheet): TO-92 3L (Ammo Pack). Collector/emitter voltage Vceo: 45V. RoHS: yes. Resistor B: yes. BE diode: no. BE resistor: PCB soldering. C(in): 9pF. Cost): 3.5pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: hFE 420...800 (IC=2mAdc, VCE=5Vdc). Max hFE gain: 800. Minimum hFE gain: 420. Ic(pulse): +150°C. Equivalents: BC550CG, BC550CBU. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. Spec info: complementary transistor (pair) BC560C. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.3V. Vebo: 5V

NPN transistor, 1A, TO-92, TO-92, 45V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. BE diode: no. C(in): 50pF. Cost): 7pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 130 MHz. Max hFE gain: 250. Minimum hFE gain: 40. Number of terminals: 3. Pd (Power Dissipation, Max): 0.8W. Assembly/installation: PCB through-hole mounting. Technology: 'Planar Epitaxial transistor'. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 45V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V