NPN bipolar transistors

NPN transistor, 100mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 45V. Collector current: 100mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 45V. BE diode: no. Cost): 1.5pF. CE diode: no. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: general purpose. Max hFE gain: 220. Minimum hFE gain: 110. Ic(pulse): 200mA. Marking on the case: 1E. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Spec info: screen printing/SMD code 1E. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.09V

NPN transistor, 0.1A, SOT-23 ( TO-236 ), SOT-23, 50V. Collector current: 0.1A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Function: general purpose. Pd (Power Dissipation, Max): 0.33W. Spec info: screen printing/SMD code 1F. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN

NPN transistor, PCB soldering (SMD), SOT-23, 100mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 100mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 1F. Collector-emitter voltage Uceo [V]: 45V. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.25W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering (SMD), SOT-23, 100mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 100mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Collector-emitter voltage Uceo [V]: 45V. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.25W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering (SMD), SOT-23, 100mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 100mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 1F. Collector-emitter voltage Uceo [V]: 45V. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, 100mA, SOT-363 ( SC-88 ), SOT-363, 45V. Collector current: 100mA. Housing: SOT-363 ( SC-88 ). Housing (according to data sheet): SOT-363. Collector/emitter voltage Vceo: 45V. BE diode: no. CE diode: no. Darlington transistor?: no. Quantity per case: 2. Semiconductor material: silicon. FT: 100 MHz. Function: DUAL NPN & PNP. Max hFE gain: 450. Minimum hFE gain: 200. Ic(pulse): 200mA. Marking on the case: 13. Number of terminals: 6. Pd (Power Dissipation, Max): 300mW. RoHS: yes. Spec info: screen printing/SMD code 13. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP & NPN. Operating temperature: -65...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.1V. Vebo: 5V

NPN transistor, PCB soldering (SMD), SC-88, 100mA. Housing: PCB soldering (SMD). Housing: SC-88. Collector current Ic [A], max.: 100mA. RoHS: yes. Component family: pair of NPN and PNP transistors. Housing (JEDEC standard): SOT-363. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 13. Collector-emitter voltage Uceo [V]: 45V. Maximum dissipation Ptot [W]: 0.22W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

ROHS: Yes. Housing: SC88, SOT363. Frequency: 100MHz. Assembly/installation: SMD. Type of transistor: NPN x2. Polarity: bipolar. Voltage (collector - emitter): 45V. Collector current Ic [A]: 100mA. Power: 200mW

NPN transistor, 0.1A, SOT-23 ( TO-236 ), SOT-23, 45V. Collector current: 0.1A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Collector/emitter voltage Vceo: 45V. BE diode: no. Cost): 4.5pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: general purpose. Max hFE gain: 800. Minimum hFE gain: 250. Pd (Power Dissipation, Max): 0.225W. Spec info: screen printing/SMD code 1G. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Vcbo: 50V. Saturation voltage VCE(sat): 0.25V. Maximum saturation voltage VCE(sat): 0.6V. Vebo: 6V

NPN transistor, PCB soldering (SMD), SOT-23, 100mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 100mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 1g. Collector-emitter voltage Uceo [V]: 45V. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.25W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, 0.1A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 30 v. Collector current: 0.1A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Function: general purpose. Number of terminals: 3. Pd (Power Dissipation, Max): 0.33W. RoHS: yes. Spec info: screen printing/SMD code 1K. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN

NPN transistor, PCB soldering (SMD), SOT-23, 100mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 100mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 1g. Collector-emitter voltage Uceo [V]: 30 v. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.25W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering (SMD), SOT-23, 100mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 100mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 1g. Collector-emitter voltage Uceo [V]: 30 v. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.25W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering (SMD), SOT-23, 100mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 100mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30 v. Cutoff frequency ft [MHz]: 300 MHz. Maximum dissipation Ptot [W]: 0.31W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering (SMD), SOT-23, 100mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 100mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 1Ls. Collector-emitter voltage Uceo [V]: 30 v. Cutoff frequency ft [MHz]: 250 MHz. Maximum dissipation Ptot [W]: 0.33W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering (SMD), SOT-23, 100mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 100mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 1L. Collector-emitter voltage Uceo [V]: 30 v. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering (SMD), SC-70, 100mA. Housing: PCB soldering (SMD). Housing: SC-70. Collector current Ic [A], max.: 100mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): SOT-323. Configuration: surface-mounted component (SMD). Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30 v. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.25W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, 0.1A, SOT-23 ( TO-236 ), SOT-23, 50V. Collector current: 0.1A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Function: general purpose. Max hFE gain: 800. Minimum hFE gain: 420. Spec info: SMD 2G. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Vcbo: 50V. Maximum saturation voltage VCE(sat): 0.25V. Vebo: 6V

NPN transistor, 2A, SOT-89, SOT89, 20V. Collector current: 2A. Housing: SOT-89. Housing (according to data sheet): SOT89. Collector/emitter voltage Vceo: 20V. BE diode: no. Cost): 22pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 170 MHz. Max hFE gain: 375. Minimum hFE gain: 85. Ic(pulse): 3A. Marking on the case: CAC. Pd (Power Dissipation, Max): 1.35W. RoHS: yes. Spec info: screen printing/SMD code CAC. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 32V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN transistor, 2A, SOT-89, SOT89, 20V. Collector current: 2A. Housing: SOT-89. Housing (according to data sheet): SOT89. Collector/emitter voltage Vceo: 20V. BE diode: no. Cost): 22pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 170 MHz. Max hFE gain: 375. Minimum hFE gain: 160. Ic(pulse): 3A. Marking on the case: CDC. Pd (Power Dissipation, Max): 1.35W. RoHS: yes. Spec info: screen printing/SMD code CDC. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 32V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN transistor, PCB soldering (SMD), TSSOP6, 100mA. Housing: PCB soldering (SMD). Housing: TSSOP6. Collector current Ic [A], max.: 100mA. RoHS: yes. Component family: pair of NPN and PNP transistors. Configuration: surface-mounted component (SMD). Number of terminals: 6. Manufacturer's marking: M1. Collector-emitter voltage Uceo [V]: 45V. Cutoff frequency ft [MHz]: 250 MHz. Maximum dissipation Ptot [W]: 0.3W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering (SMD), SOT-223, 1.5A. Housing: PCB soldering (SMD). Housing: SOT-223. Collector current Ic [A], max.: 1.5A. RoHS: yes. Component family: NPN power transistor. Housing (JEDEC standard): TO-261. Configuration: surface-mounted component (SMD). Number of terminals: 3. Collector-emitter voltage Uceo [V]: 45V. Cutoff frequency ft [MHz]: 130 MHz. Maximum dissipation Ptot [W]: 1.5W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, 1A, SOT-223 ( TO-226 ), SOT-223, 45V. Collector current: 1A. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Collector/emitter voltage Vceo: 45V. BE diode: no. Cost): 6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 180 MHz. Function: Audio, telephony and automotive applications. Max hFE gain: 250. Minimum hFE gain: 100. Ic(pulse): 2A. Marking on the case: BCP54/16. Number of terminals: 3. Pd (Power Dissipation, Max): 1.35W. RoHS: yes. Spec info: complementary transistor (pair) BCP51-16. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 45V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN transistor, 1A, SOT-223 ( TO-226 ), SOT-223, 60V. Collector current: 1A. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Collector/emitter voltage Vceo: 60V. BE diode: no. Cost): 25pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: Audio, telephony and automotive applications. Max hFE gain: 250. Minimum hFE gain: 100. Ic(pulse): 2A. Marking on the case: BCP 5516. Number of terminals: 3. Pd (Power Dissipation, Max): 2W. RoHS: yes. Spec info: complementary transistor (pair) BCP52-16. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 60V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN transistor, PCB soldering (SMD), SOT-223, 1A. Housing: PCB soldering (SMD). Housing: SOT-223. Collector current Ic [A], max.: 1A. RoHS: yes. Component family: NPN power transistor. Housing (JEDEC standard): TO-261. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BH-10. Collector-emitter voltage Uceo [V]: 80V. Cutoff frequency ft [MHz]: 130 MHz. Maximum dissipation Ptot [W]: 1.5W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C