NPN bipolar transistors

NPN transistor, 1A, SOT-223 ( TO-226 ), SOT-223, 80V. Collector current: 1A. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Collector/emitter voltage Vceo: 80V. BE diode: no. Cost): 6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 180 MHz. Function: Audio, telephony and automotive applications. Max hFE gain: 250. Minimum hFE gain: 100. Ic(pulse): 2A. Marking on the case: BCP56/16. Number of terminals: 3. Pd (Power Dissipation, Max): 1.35W. RoHS: yes. Spec info: complementary transistor (pair) BCP53-16. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 100V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN transistor, PCB soldering (SMD), SOT-223, 1A. Housing: PCB soldering (SMD). Housing: SOT-223. Collector current Ic [A], max.: 1A. RoHS: yes. Component family: NPN power transistor. Housing (JEDEC standard): TO-261. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BH-10. Collector-emitter voltage Uceo [V]: 80V. Cutoff frequency ft [MHz]: 130 MHz. Maximum dissipation Ptot [W]: 1.5W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering (SMD), SOT-223, 1A. Housing: PCB soldering (SMD). Housing: SOT-223. Collector current Ic [A], max.: 1A. RoHS: yes. Component family: NPN power transistor. Housing (JEDEC standard): TO-261. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BH. Collector-emitter voltage Uceo [V]: 80V. Cutoff frequency ft [MHz]: 130 MHz. Maximum dissipation Ptot [W]: 1.5W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering (SMD), SOT-223, 1A. Housing: PCB soldering (SMD). Housing: SOT-223. Collector current Ic [A], max.: 1A. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-261. Configuration: surface-mounted component (SMD). Number of terminals: 3. Collector-emitter voltage Uceo [V]: 20V. Cutoff frequency ft [MHz]: 60 MHz. Maximum dissipation Ptot [W]: 1.5W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering (SMD), SOT-23, 500mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 500mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: XGs. Collector-emitter voltage Uceo [V]: 50V. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.33W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, 500mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 50V. Collector current: 500mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 50V. Resistor B: 10k Ohms. BE diode: no. BE resistor: 10k Ohms. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: Transistor with built-in bias resistor. Minimum hFE gain: 70. Marking on the case: XCs. Number of terminals: 3. Pd (Power Dissipation, Max): 0.33W. RoHS: yes. Spec info: screen printing/CMS code XCs. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.3V. Vebo: 1V

NPN transistor, PCB soldering (SMD), SOT-89, 500mA. Housing: PCB soldering (SMD). Housing: SOT-89. Collector current Ic [A], max.: 500mA. RoHS: no. Component family: Darlington NPN Transistor. Housing (JEDEC standard): TO-243. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: EF. Collector-emitter voltage Uceo [V]: 30 v. Cutoff frequency ft [MHz]: 150 MHz. Maximum dissipation Ptot [W]: 1W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, 0.1A, 30 v. Collector current: 0.1A. Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. Semiconductor material: silicon. FT: 300 MHz. Note: >420. Type of transistor: NPN

NPN transistor, PCB soldering (SMD), SOT-23, 100mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 100mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BCW60RC. Collector-emitter voltage Uceo [V]: 45V. Maximum dissipation Ptot [W]: 0.2W

NPN transistor, PCB soldering (SMD), SOT-23, 500mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 500mA. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: U1. Collector-emitter voltage Uceo [V]: 45V. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, 0.8A, SOT-23 ( TO-236 ), SOT-23, 125V. Collector current: 0.8A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Collector/emitter voltage Vceo: 125V. BE diode: no. Cost): 12pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: NPN-transistor. AF applications and switching. Max hFE gain: 63. Minimum hFE gain: 25. Ic(pulse): 1A. Marking on the case: EKs. Pd (Power Dissipation, Max): 0.33W. Spec info: complementary transistor (pair) BCX42. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -65...150°C. Vcbo: 125V. Maximum saturation voltage VCE(sat): 0.9V. Vebo: 5V

NPN transistor, PCB soldering (SMD), SOT-89, 1A. Housing: PCB soldering (SMD). Housing: SOT-89. Collector current Ic [A], max.: 1A. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-243. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BD. Collector-emitter voltage Uceo [V]: 45V. Cutoff frequency ft [MHz]: 180 MHz. Maximum dissipation Ptot [W]: 1.35W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering (SMD), SOT-89, 1A. Housing: PCB soldering (SMD). Housing: SOT-89. Collector current Ic [A], max.: 1A. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-243. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: bM. Collector-emitter voltage Uceo [V]: 60V. Cutoff frequency ft [MHz]: 180 MHz. Maximum dissipation Ptot [W]: 1.35W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, 1A, SOT-89 4-Pin ( 3+Tab ), SOT-89, 80V. Collector current: 1A. Housing: SOT-89 4-Pin ( 3+Tab ). Housing (according to data sheet): SOT-89. Collector/emitter voltage Vceo: 80V. Conditioning: roll. Conditioning unit: 1000. Quantity per case: 1. Semiconductor material: silicon. FT: 130 MHz. Function: audio and video amplifiers. Max hFE gain: 250. Minimum hFE gain: 40. Ic(pulse): 1.5A. Marking on the case: BH. Number of terminals: 3. Pd (Power Dissipation, Max): 1.3W. RoHS: yes. Spec info: screen printing/SMD code BH. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN transistor, 1A, SOT-89 4-Pin ( 3+Tab ), SOT-89, 80V. Collector current: 1A. Housing: SOT-89 4-Pin ( 3+Tab ). Housing (according to data sheet): SOT-89. Collector/emitter voltage Vceo: 80V. Quantity per case: 1. Semiconductor material: silicon. FT: 130 MHz. Function: audio and video amplifiers. Max hFE gain: 160. Minimum hFE gain: 63. Ic(pulse): 1.5A. Note: screen printing/SMD code BK. Marking on the case: BK. Number of terminals: 3. Pd (Power Dissipation, Max): 1.3W. RoHS: yes. Spec info: complementary transistor (pair) BCX53-10. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN transistor, PCB soldering (SMD), SOT-89, 1A, SOT-89 4-Pin ( 3+Tab ), SOT-89, 80V. Housing: PCB soldering (SMD). Housing: SOT-89. Collector current Ic [A], max.: 1A. Housing: SOT-89 4-Pin ( 3+Tab ). Housing (according to data sheet): SOT-89. Collector/emitter voltage Vceo: 80V. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-243. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BL. Collector-emitter voltage Uceo [V]: 80V. Cutoff frequency ft [MHz]: 180 MHz. Maximum dissipation Ptot [W]: 1.35W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Note: screen printing/SMD code BL. Marking on the case: BL. Number of terminals: 3. Pd (Power Dissipation, Max): 1.3W. Spec info: complementary transistor (pair) BCX53-16. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN transistor, 100mA, SOT-23 ( TO-236 ), SOT-23-3, 45V. Collector current: 100mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23-3. Collector/emitter voltage Vceo: 45V. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: NF-TR. Max hFE gain: 630. Minimum hFE gain: 100. Ic(pulse): 200mA. Marking on the case: AK*. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Spec info: SMD AK* (AKp, AKt, AKW). Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 45V. Saturation voltage VCE(sat): 0.7V. Vebo: 5V

NPN transistor, 100mA, TO-18 ( TO-206 ), TO-18, 45V. Collector current: 100mA. Housing: TO-18 ( TO-206 ). Housing (according to data sheet): TO-18. Collector/emitter voltage Vceo: 45V. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Max hFE gain: 1000. Minimum hFE gain: 40. Ic(pulse): 200A. Pd (Power Dissipation, Max): 0.34W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 45V. Saturation voltage VCE(sat): 0.75V

NPN transistor, PCB soldering, TO-18, 200mA. Housing: PCB soldering. Housing: TO-18. Collector current Ic [A], max.: 200mA. RoHS: no. Component family: NPN transistor. Housing (JEDEC standard): TO-206AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BCY59-9. Collector-emitter voltage Uceo [V]: 45V. Cutoff frequency ft [MHz]: 200 MHz. Maximum dissipation Ptot [W]: 0.6W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +200°C

NPN transistor, 3A, 60V. Collector current: 3A. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Pd (Power Dissipation, Max): 18.5W. Type of transistor: NPN

NPN transistor, 1.5A, TO-126 (TO-225, SOT-32), TO-126, 45V. Collector current: 1.5A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 45V. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: NF-L. Number of terminals: 3. Pd (Power Dissipation, Max): 12.5W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 1.5A, TO-126F, TO-126 plastic, 45V. Collector current: 1.5A. Housing: TO-126F. Housing (according to data sheet): TO-126 plastic. Collector/emitter voltage Vceo: 45V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: Audio amplifiers and applications. Max hFE gain: 250. Minimum hFE gain: 100. Ic(pulse): 2A. Pd (Power Dissipation, Max): 12.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55°C to +150°C. Vcbo: 45V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN transistor, PCB soldering, TO-126, 1.5A, 1.5A, TO-126 (TO-225, SOT-32), TO-126, 80V. Housing: PCB soldering. Housing: TO-126. Collector current Ic [A], max.: 1.5A. Collector current: 1.5A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 80V. RoHS: yes. Component family: NPN power transistor. Housing (JEDEC standard): SOT-32. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD139. Collector-emitter voltage Uceo [V]: 80V. Maximum dissipation Ptot [W]: 12.5W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Cutoff frequency ft [MHz]: 50 MHz. Ic(pulse): 3A. Number of terminals: 3. Pd (Power Dissipation, Max): 12.5W. Spec info: complementary transistor (pair) BD140. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 80V. Maximum saturation voltage VCE(sat): 0.5V

NPN transistor, PCB soldering, TO-126, 1.5A. Housing: PCB soldering. Housing: TO-126. Collector current Ic [A], max.: 1.5A. RoHS: yes. Component family: NPN power transistor. Housing (JEDEC standard): SOT-32. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD139-10. Collector-emitter voltage Uceo [V]: 80V. Maximum dissipation Ptot [W]: 12.5W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, 80V, 1A, TO-126 FULLPACK. Collector-Emitter Voltage VCEO: 80V. Collector current: 1A. Housing: TO-126 FULLPACK. Type of transistor: NPN power transistor. Polarity: NPN. Power: 10W