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Semiconductors Transistors
NPN bipolar transistors

NPN bipolar transistors

1145 products available
Products per page :
1...353637 3839...46
Quantity in stock : 1175
FMMT619

FMMT619

NPN transistor, PCB soldering (SMD), SOT-23, 2A. Housing: PCB soldering (SMD). Housing: SOT-23. Coll...
FMMT619
NPN transistor, PCB soldering (SMD), SOT-23, 2A. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 2A. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 619. Collector-emitter voltage Uceo [V]: 50V. Cutoff frequency ft [MHz]: 165 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
FMMT619
NPN transistor, PCB soldering (SMD), SOT-23, 2A. Housing: PCB soldering (SMD). Housing: SOT-23. Collector current Ic [A], max.: 2A. RoHS: yes. Component family: NPN transistor. Housing (JEDEC standard): TO-236. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 619. Collector-emitter voltage Uceo [V]: 50V. Cutoff frequency ft [MHz]: 165 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
Set of 1
1.15$ VAT incl.
(1.06$ excl. VAT)
1.15$
Quantity in stock : 30
FN1016

FN1016

NPN transistor, 8A, TO-3PF (SOT399, 2-16E3A), TO-3PF, 160V. Collector current: 8A. Housing: TO-3PF (...
FN1016
NPN transistor, 8A, TO-3PF (SOT399, 2-16E3A), TO-3PF, 160V. Collector current: 8A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 160V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Function: hFE 5000. Number of terminals: 3. Pd (Power Dissipation, Max): 70W. RoHS: yes. Spec info: complementary transistor (pair) FP1016. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN
FN1016
NPN transistor, 8A, TO-3PF (SOT399, 2-16E3A), TO-3PF, 160V. Collector current: 8A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3PF. Collector/emitter voltage Vceo: 160V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Function: hFE 5000. Number of terminals: 3. Pd (Power Dissipation, Max): 70W. RoHS: yes. Spec info: complementary transistor (pair) FP1016. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN
Set of 1
7.17$ VAT incl.
(6.63$ excl. VAT)
7.17$
Quantity in stock : 1578
FZT458TA

FZT458TA

NPN transistor, PCB soldering (SMD), SOT-223, 0.3A. Housing: PCB soldering (SMD). Housing: SOT-223. ...
FZT458TA
NPN transistor, PCB soldering (SMD), SOT-223, 0.3A. Housing: PCB soldering (SMD). Housing: SOT-223. Collector current Ic [A], max.: 0.3A. RoHS: yes. Component family: high voltage NPN transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FZT458. Collector-emitter voltage Uceo [V]: 400V. Cutoff frequency ft [MHz]: 50 MHz. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
FZT458TA
NPN transistor, PCB soldering (SMD), SOT-223, 0.3A. Housing: PCB soldering (SMD). Housing: SOT-223. Collector current Ic [A], max.: 0.3A. RoHS: yes. Component family: high voltage NPN transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FZT458. Collector-emitter voltage Uceo [V]: 400V. Cutoff frequency ft [MHz]: 50 MHz. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
Set of 1
3.91$ VAT incl.
(3.62$ excl. VAT)
3.91$
Quantity in stock : 907
FZT849

FZT849

NPN transistor, PCB soldering (SMD), SOT-223, 7A. Housing: PCB soldering (SMD). Housing: SOT-223. Co...
FZT849
NPN transistor, PCB soldering (SMD), SOT-223, 7A. Housing: PCB soldering (SMD). Housing: SOT-223. Collector current Ic [A], max.: 7A. RoHS: yes. Component family: NPN power transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FZT849. Collector-emitter voltage Uceo [V]: 80V. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
FZT849
NPN transistor, PCB soldering (SMD), SOT-223, 7A. Housing: PCB soldering (SMD). Housing: SOT-223. Collector current Ic [A], max.: 7A. RoHS: yes. Component family: NPN power transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: FZT849. Collector-emitter voltage Uceo [V]: 80V. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 3W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C
Set of 1
2.89$ VAT incl.
(2.67$ excl. VAT)
2.89$
Quantity in stock : 12
GEN561

GEN561

NPN transistor. CE diode: yes. Quantity per case: 1...
GEN561
NPN transistor. CE diode: yes. Quantity per case: 1
GEN561
NPN transistor. CE diode: yes. Quantity per case: 1
Set of 1
8.54$ VAT incl.
(7.90$ excl. VAT)
8.54$
Quantity in stock : 73
HD1750FX

HD1750FX

NPN transistor, 24A, TO-3PF (SOT399, 2-16E3A), ISOWATT218FX, 800V. Collector current: 24A. Housing: ...
HD1750FX
NPN transistor, 24A, TO-3PF (SOT399, 2-16E3A), ISOWATT218FX, 800V. Collector current: 24A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): ISOWATT218FX. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: CTV-HA hi-res (F). Ic(pulse): 36A. Pd (Power Dissipation, Max): 75W. RoHS: yes. Spec info: 0.17...0.31us. Assembly/installation: PCB through-hole mounting. Tf(max): 250 ns. Tf(min): 180 ns. Type of transistor: NPN. Vcbo: 1700V. Saturation voltage VCE(sat): 0.95V. Maximum saturation voltage VCE(sat): 3V. Vebo: 10V
HD1750FX
NPN transistor, 24A, TO-3PF (SOT399, 2-16E3A), ISOWATT218FX, 800V. Collector current: 24A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): ISOWATT218FX. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. Function: CTV-HA hi-res (F). Ic(pulse): 36A. Pd (Power Dissipation, Max): 75W. RoHS: yes. Spec info: 0.17...0.31us. Assembly/installation: PCB through-hole mounting. Tf(max): 250 ns. Tf(min): 180 ns. Type of transistor: NPN. Vcbo: 1700V. Saturation voltage VCE(sat): 0.95V. Maximum saturation voltage VCE(sat): 3V. Vebo: 10V
Set of 1
11.56$ VAT incl.
(10.69$ excl. VAT)
11.56$
Quantity in stock : 1
HPA100R

HPA100R

NPN transistor. Quantity per case: 1. Function: HA, hi-def. Note: 0.2. Spec info: MONITOR...
HPA100R
NPN transistor. Quantity per case: 1. Function: HA, hi-def. Note: 0.2. Spec info: MONITOR
HPA100R
NPN transistor. Quantity per case: 1. Function: HA, hi-def. Note: 0.2. Spec info: MONITOR
Set of 1
30.05$ VAT incl.
(27.80$ excl. VAT)
30.05$
Quantity in stock : 2
HPA150R

HPA150R

NPN transistor. CE diode: yes. Quantity per case: 1. Function: HA, hi-def. Note: 0.2. Spec info: MON...
HPA150R
NPN transistor. CE diode: yes. Quantity per case: 1. Function: HA, hi-def. Note: 0.2. Spec info: MONITOR
HPA150R
NPN transistor. CE diode: yes. Quantity per case: 1. Function: HA, hi-def. Note: 0.2. Spec info: MONITOR
Set of 1
44.05$ VAT incl.
(40.75$ excl. VAT)
44.05$
Quantity in stock : 850
HSCF4242

HSCF4242

NPN transistor, 7A, TO-220FP, TO-220FP, 400V. Collector current: 7A. Housing: TO-220FP. Housing (acc...
HSCF4242
NPN transistor, 7A, TO-220FP, TO-220FP, 400V. Collector current: 7A. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Collector/emitter voltage Vceo: 400V. Quantity per case: 1. Semiconductor material: silicon. Function: High Speed ​​Switching. Max hFE gain: 47. Minimum hFE gain: 29. Number of terminals: 3. Pd (Power Dissipation, Max): 30W. Spec info: 'Epitaxial Planar Transistor'. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -50...+150°C. Vcbo: 450V. Saturation voltage VCE(sat): 0.8V. Vebo: 10V
HSCF4242
NPN transistor, 7A, TO-220FP, TO-220FP, 400V. Collector current: 7A. Housing: TO-220FP. Housing (according to data sheet): TO-220FP. Collector/emitter voltage Vceo: 400V. Quantity per case: 1. Semiconductor material: silicon. Function: High Speed ​​Switching. Max hFE gain: 47. Minimum hFE gain: 29. Number of terminals: 3. Pd (Power Dissipation, Max): 30W. Spec info: 'Epitaxial Planar Transistor'. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -50...+150°C. Vcbo: 450V. Saturation voltage VCE(sat): 0.8V. Vebo: 10V
Set of 1
1.84$ VAT incl.
(1.70$ excl. VAT)
1.84$
Quantity in stock : 176
HSD1609-D

HSD1609-D

NPN transistor, 0.1A, TO-126F, TO-126ML, 160V. Collector current: 0.1A. Housing: TO-126F. Housing (a...
HSD1609-D
NPN transistor, 0.1A, TO-126F, TO-126ML, 160V. Collector current: 0.1A. Housing: TO-126F. Housing (according to data sheet): TO-126ML. Collector/emitter voltage Vceo: 160V. Quantity per case: 1. Semiconductor material: silicon. Function: hFE 160...320. Spec info: complementary transistor (pair) HSB1109. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN
HSD1609-D
NPN transistor, 0.1A, TO-126F, TO-126ML, 160V. Collector current: 0.1A. Housing: TO-126F. Housing (according to data sheet): TO-126ML. Collector/emitter voltage Vceo: 160V. Quantity per case: 1. Semiconductor material: silicon. Function: hFE 160...320. Spec info: complementary transistor (pair) HSB1109. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN
Set of 1
0.89$ VAT incl.
(0.82$ excl. VAT)
0.89$
Quantity in stock : 149
KF506

KF506

NPN transistor, 500mA, TO-5, TO-5, 75V. Collector current: 500mA. Housing: TO-5. Housing (according ...
KF506
NPN transistor, 500mA, TO-5, TO-5, 75V. Collector current: 500mA. Housing: TO-5. Housing (according to data sheet): TO-5. Collector/emitter voltage Vceo: 75V. Quantity per case: 1. Semiconductor material: silicon. Function: hFE 35...125. Pd (Power Dissipation, Max): 0.8W. Spec info: Lo-Pwr BJT. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN
KF506
NPN transistor, 500mA, TO-5, TO-5, 75V. Collector current: 500mA. Housing: TO-5. Housing (according to data sheet): TO-5. Collector/emitter voltage Vceo: 75V. Quantity per case: 1. Semiconductor material: silicon. Function: hFE 35...125. Pd (Power Dissipation, Max): 0.8W. Spec info: Lo-Pwr BJT. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN
Set of 1
1.09$ VAT incl.
(1.01$ excl. VAT)
1.09$
Quantity in stock : 1
KRC102M

KRC102M

NPN transistor, 0.1A, 50V. Collector current: 0.1A. Collector/emitter voltage Vceo: 50V. Quantity pe...
KRC102M
NPN transistor, 0.1A, 50V. Collector current: 0.1A. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. Spec info: TO-92M. Type of transistor: NPN
KRC102M
NPN transistor, 0.1A, 50V. Collector current: 0.1A. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. Spec info: TO-92M. Type of transistor: NPN
Set of 1
2.72$ VAT incl.
(2.52$ excl. VAT)
2.72$
Quantity in stock : 1
KRC110M

KRC110M

NPN transistor, 0.1A, 50V. Collector current: 0.1A. Collector/emitter voltage Vceo: 50V. Quantity pe...
KRC110M
NPN transistor, 0.1A, 50V. Collector current: 0.1A. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. Spec info: TO-92M. Type of transistor: NPN
KRC110M
NPN transistor, 0.1A, 50V. Collector current: 0.1A. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. Spec info: TO-92M. Type of transistor: NPN
Set of 1
3.98$ VAT incl.
(3.68$ excl. VAT)
3.98$
Quantity in stock : 1
KRC111M

KRC111M

NPN transistor, 0.1A, 50V. Collector current: 0.1A. Collector/emitter voltage Vceo: 50V. Quantity pe...
KRC111M
NPN transistor, 0.1A, 50V. Collector current: 0.1A. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. Spec info: TO-92M. Type of transistor: NPN
KRC111M
NPN transistor, 0.1A, 50V. Collector current: 0.1A. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. Spec info: TO-92M. Type of transistor: NPN
Set of 1
7.85$ VAT incl.
(7.26$ excl. VAT)
7.85$
Quantity in stock : 1998
KSC1009Y

KSC1009Y

NPN transistor, 0.7A, 140V. Collector current: 0.7A. Collector/emitter voltage Vceo: 140V. BE diode:...
KSC1009Y
NPN transistor, 0.7A, 140V. Collector current: 0.7A. Collector/emitter voltage Vceo: 140V. BE diode: no. Cost): 2.6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 0.8W. Type of transistor: NPN. Vcbo: 160V
KSC1009Y
NPN transistor, 0.7A, 140V. Collector current: 0.7A. Collector/emitter voltage Vceo: 140V. BE diode: no. Cost): 2.6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 0.8W. Type of transistor: NPN. Vcbo: 160V
Set of 1
0.41$ VAT incl.
(0.38$ excl. VAT)
0.41$
Quantity in stock : 11
KSC1507-O

KSC1507-O

NPN transistor, 200mA, TO-220, TO-220, 300V. Collector current: 200mA. Housing: TO-220. Housing (acc...
KSC1507-O
NPN transistor, 200mA, TO-220, TO-220, 300V. Collector current: 200mA. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 300V. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Function: Color TV Chroma Output (VID-L). Max hFE gain: 140. Minimum hFE gain: 70. Marking on the case: C1507 O. Number of terminals: 3. Pd (Power Dissipation, Max): 15W. Spec info: fT--40...80MHz, VCE=30V, IC=10mA. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 300V. Saturation voltage VCE(sat): 2V. Vebo: 7V
KSC1507-O
NPN transistor, 200mA, TO-220, TO-220, 300V. Collector current: 200mA. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 300V. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Function: Color TV Chroma Output (VID-L). Max hFE gain: 140. Minimum hFE gain: 70. Marking on the case: C1507 O. Number of terminals: 3. Pd (Power Dissipation, Max): 15W. Spec info: fT--40...80MHz, VCE=30V, IC=10mA. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 300V. Saturation voltage VCE(sat): 2V. Vebo: 7V
Set of 1
3.74$ VAT incl.
(3.46$ excl. VAT)
3.74$
Quantity in stock : 5
KSC1507-Y

KSC1507-Y

NPN transistor, 200mA, TO-220, TO-220, 300V. Collector current: 200mA. Housing: TO-220. Housing (acc...
KSC1507-Y
NPN transistor, 200mA, TO-220, TO-220, 300V. Collector current: 200mA. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 300V. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Function: Color TV Chroma Output (VID-L). Max hFE gain: 240. Minimum hFE gain: 120. Marking on the case: C1507 Y. Number of terminals: 3. Pd (Power Dissipation, Max): 15W. Spec info: fT--40...80MHz, VCE=30V, IC=10mA. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 300V. Saturation voltage VCE(sat): 2V. Vebo: 7V
KSC1507-Y
NPN transistor, 200mA, TO-220, TO-220, 300V. Collector current: 200mA. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 300V. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Function: Color TV Chroma Output (VID-L). Max hFE gain: 240. Minimum hFE gain: 120. Marking on the case: C1507 Y. Number of terminals: 3. Pd (Power Dissipation, Max): 15W. Spec info: fT--40...80MHz, VCE=30V, IC=10mA. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 300V. Saturation voltage VCE(sat): 2V. Vebo: 7V
Set of 1
4.13$ VAT incl.
(3.82$ excl. VAT)
4.13$
Quantity in stock : 790
KSC1845-F

KSC1845-F

NPN transistor, 50mA, TO-92, TO-92 3L (AMMO), 120V. Collector current: 50mA. Housing: TO-92. Housing...
KSC1845-F
NPN transistor, 50mA, TO-92, TO-92 3L (AMMO), 120V. Collector current: 50mA. Housing: TO-92. Housing (according to data sheet): TO-92 3L (AMMO). Collector/emitter voltage Vceo: 120V. BE diode: no. Cost): 1.6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 110 MHz. Function: HI-FI audio amplifier. Max hFE gain: 600. Minimum hFE gain: 300. Marking on the case: C1845. Equivalents: 2SC1845. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Spec info: complementary transistor (pair) KSA992. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 120V. Saturation voltage VCE(sat): 0.07V. Maximum saturation voltage VCE(sat): 0.3V. Vebo: 5V
KSC1845-F
NPN transistor, 50mA, TO-92, TO-92 3L (AMMO), 120V. Collector current: 50mA. Housing: TO-92. Housing (according to data sheet): TO-92 3L (AMMO). Collector/emitter voltage Vceo: 120V. BE diode: no. Cost): 1.6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 110 MHz. Function: HI-FI audio amplifier. Max hFE gain: 600. Minimum hFE gain: 300. Marking on the case: C1845. Equivalents: 2SC1845. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Spec info: complementary transistor (pair) KSA992. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 120V. Saturation voltage VCE(sat): 0.07V. Maximum saturation voltage VCE(sat): 0.3V. Vebo: 5V
Set of 1
0.48$ VAT incl.
(0.44$ excl. VAT)
0.48$
Quantity in stock : 795
KSC1845F

KSC1845F

NPN transistor, 50mA, TO-92, TO-92 3L (AMMO), 120V. Collector current: 50mA. Housing: TO-92. Housing...
KSC1845F
NPN transistor, 50mA, TO-92, TO-92 3L (AMMO), 120V. Collector current: 50mA. Housing: TO-92. Housing (according to data sheet): TO-92 3L (AMMO). Collector/emitter voltage Vceo: 120V. BE diode: no. Cost): 1.6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 110 MHz. Function: HI-FI audio amplifier. Max hFE gain: 600. Minimum hFE gain: 300. Marking on the case: C1845. Equivalents: 2SC1845. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Spec info: complementary transistor (pair) KSA992. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 120V. Saturation voltage VCE(sat): 0.07V. Maximum saturation voltage VCE(sat): 0.3V. Vebo: 5V
KSC1845F
NPN transistor, 50mA, TO-92, TO-92 3L (AMMO), 120V. Collector current: 50mA. Housing: TO-92. Housing (according to data sheet): TO-92 3L (AMMO). Collector/emitter voltage Vceo: 120V. BE diode: no. Cost): 1.6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 110 MHz. Function: HI-FI audio amplifier. Max hFE gain: 600. Minimum hFE gain: 300. Marking on the case: C1845. Equivalents: 2SC1845. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Spec info: complementary transistor (pair) KSA992. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 120V. Saturation voltage VCE(sat): 0.07V. Maximum saturation voltage VCE(sat): 0.3V. Vebo: 5V
Set of 1
0.43$ VAT incl.
(0.40$ excl. VAT)
0.43$
Quantity in stock : 91
KSC2001

KSC2001

NPN transistor, 0.7A, TO-92, TO-92, 30 v. Collector current: 0.7A. Housing: TO-92. Housing (accordin...
KSC2001
NPN transistor, 0.7A, TO-92, TO-92, 30 v. Collector current: 0.7A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 30 v. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 170 MHz. Pd (Power Dissipation, Max): 0.6W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN
KSC2001
NPN transistor, 0.7A, TO-92, TO-92, 30 v. Collector current: 0.7A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 30 v. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 170 MHz. Pd (Power Dissipation, Max): 0.6W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN
Set of 1
0.40$ VAT incl.
(0.37$ excl. VAT)
0.40$
Quantity in stock : 3
KSC2073-2

KSC2073-2

NPN transistor, 1.5A, TO-220, TO-220, 150V. Collector current: 1.5A. Housing: TO-220. Housing (accor...
KSC2073-2
NPN transistor, 1.5A, TO-220, TO-220, 150V. Collector current: 1.5A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 150V. BE diode: no. Cost): 50pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: TV Vertical Deflection Output. Max hFE gain: 125. Minimum hFE gain: 60. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. RoHS: yes. Spec info: complementary transistor (pair) KSA940. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 150V. Saturation voltage VCE(sat): 1V. Vebo: 5V
KSC2073-2
NPN transistor, 1.5A, TO-220, TO-220, 150V. Collector current: 1.5A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 150V. BE diode: no. Cost): 50pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: TV Vertical Deflection Output. Max hFE gain: 125. Minimum hFE gain: 60. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. RoHS: yes. Spec info: complementary transistor (pair) KSA940. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 150V. Saturation voltage VCE(sat): 1V. Vebo: 5V
Set of 1
3.53$ VAT incl.
(3.27$ excl. VAT)
3.53$
Quantity in stock : 81
KSC2073TU

KSC2073TU

NPN transistor, 1.5A, TO-220, TO-220, 150V. Collector current: 1.5A. Housing: TO-220. Housing (accor...
KSC2073TU
NPN transistor, 1.5A, TO-220, TO-220, 150V. Collector current: 1.5A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 150V. BE diode: no. Cost): 50pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: TV Vertical Deflection Output. Max hFE gain: 125. Minimum hFE gain: 40. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. RoHS: yes. Spec info: complementary transistor (pair) KSA940. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 150V. Maximum saturation voltage VCE(sat): 1V. Vebo: 5V
KSC2073TU
NPN transistor, 1.5A, TO-220, TO-220, 150V. Collector current: 1.5A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 150V. BE diode: no. Cost): 50pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: TV Vertical Deflection Output. Max hFE gain: 125. Minimum hFE gain: 40. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. RoHS: yes. Spec info: complementary transistor (pair) KSA940. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 150V. Maximum saturation voltage VCE(sat): 1V. Vebo: 5V
Set of 1
3.19$ VAT incl.
(2.95$ excl. VAT)
3.19$
Quantity in stock : 125
KSC2310-O

KSC2310-O

NPN transistor, 0.05A, TO-92, TO-92L (9mm magas), 150V. Collector current: 0.05A. Housing: TO-92. Ho...
KSC2310-O
NPN transistor, 0.05A, TO-92, TO-92L (9mm magas), 150V. Collector current: 0.05A. Housing: TO-92. Housing (according to data sheet): TO-92L (9mm magas). Collector/emitter voltage Vceo: 150V. BE diode: no. Cost): 3.5pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 140. Minimum hFE gain: 70. Marking on the case: C2310 O. Pd (Power Dissipation, Max): 0.8W. RoHS: no. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Silicon Transistor'. Type of transistor: NPN. Vcbo: 200V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 5V
KSC2310-O
NPN transistor, 0.05A, TO-92, TO-92L (9mm magas), 150V. Collector current: 0.05A. Housing: TO-92. Housing (according to data sheet): TO-92L (9mm magas). Collector/emitter voltage Vceo: 150V. BE diode: no. Cost): 3.5pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 140. Minimum hFE gain: 70. Marking on the case: C2310 O. Pd (Power Dissipation, Max): 0.8W. RoHS: no. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Silicon Transistor'. Type of transistor: NPN. Vcbo: 200V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 5V
Set of 1
0.61$ VAT incl.
(0.56$ excl. VAT)
0.61$
Quantity in stock : 51
KSC2310-Y

KSC2310-Y

NPN transistor, 0.05A, TO-92, TO-92L (9mm magas), 150V. Collector current: 0.05A. Housing: TO-92. Ho...
KSC2310-Y
NPN transistor, 0.05A, TO-92, TO-92L (9mm magas), 150V. Collector current: 0.05A. Housing: TO-92. Housing (according to data sheet): TO-92L (9mm magas). Collector/emitter voltage Vceo: 150V. BE diode: no. Cost): 3.5pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 240. Minimum hFE gain: 120. Marking on the case: C2310 Y. Pd (Power Dissipation, Max): 0.8W. RoHS: no. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Silicon Transistor'. Type of transistor: NPN. Vcbo: 200V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 5V
KSC2310-Y
NPN transistor, 0.05A, TO-92, TO-92L (9mm magas), 150V. Collector current: 0.05A. Housing: TO-92. Housing (according to data sheet): TO-92L (9mm magas). Collector/emitter voltage Vceo: 150V. BE diode: no. Cost): 3.5pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 240. Minimum hFE gain: 120. Marking on the case: C2310 Y. Pd (Power Dissipation, Max): 0.8W. RoHS: no. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Silicon Transistor'. Type of transistor: NPN. Vcbo: 200V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 5V
Set of 1
1.19$ VAT incl.
(1.10$ excl. VAT)
1.19$
Out of stock
KSC2328A-Y

KSC2328A-Y

NPN transistor, 2A, 30 v. Collector current: 2A. Collector/emitter voltage Vceo: 30 v. Resistor B: 1...
KSC2328A-Y
NPN transistor, 2A, 30 v. Collector current: 2A. Collector/emitter voltage Vceo: 30 v. Resistor B: 10. BE diode: no. BE resistor: 10. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Pd (Power Dissipation, Max): 1W. Spec info: TO-92M (hauteur 9mm). Type of transistor: NPN
KSC2328A-Y
NPN transistor, 2A, 30 v. Collector current: 2A. Collector/emitter voltage Vceo: 30 v. Resistor B: 10. BE diode: no. BE resistor: 10. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Pd (Power Dissipation, Max): 1W. Spec info: TO-92M (hauteur 9mm). Type of transistor: NPN
Set of 1
2.22$ VAT incl.
(2.05$ excl. VAT)
2.22$
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