NPN bipolar transistors

NPN transistor, PCB soldering, ITO-218, 8A. Housing: PCB soldering. Housing: ITO-218. Collector current Ic [A], max.: 8A. RoHS: yes. Component family: high voltage NPN transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: S2000N. Collector-emitter voltage Uceo [V]: 1.5 kV. Cutoff frequency ft [MHz]: 2 MHz. Maximum dissipation Ptot [W]: 50W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, 8A, TO-247, TO-247F, 1500V. Collector current: 8A. Housing: TO-247. Housing (according to data sheet): TO-247F. Collector/emitter voltage Vceo: 1500V. BE diode: no. Cost): 9pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 15A, 160V. Collector current: 15A. Collector/emitter voltage Vceo: 160V. BE diode: no. Cost): 35pF. CE diode: no. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: NF/L, HI-FI Audio. Note: hFE 5000...20000. Pd (Power Dissipation, Max): 150W. Spec info: complementary transistor (pair) SAP15P. Type of transistor: NPN

NPN transistor, 15A, 160V. Collector current: 15A. Collector/emitter voltage Vceo: 160V. BE diode: no. Cost): 35pF. CE diode: no. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: NF/L, HI-FI Audio. Note: hFE 5000...20000. Pd (Power Dissipation, Max): 150W. Spec info: complementary transistor (pair) SAP15P. Type of transistor: NPN

NPN transistor, 15A, 400V. Collector current: 15A. Collector/emitter voltage Vceo: 400V. BE diode: no. Cost): 8pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 125W. Type of transistor: NPN. Vcbo: 850V

NPN transistor, SOT23, 4.87k Ohms. Housing: SOT23. Collector-Emitter Voltage VCEO: 4.87k Ohms. Type: transistor for low power applications. Polarity: NPN. Power: 0.36W. Collector-Base Voltage VCBO: 4.87k Ohms. Mounting Type: SMD. Bandwidth MHz: 50MHz. DC Collector/Base Gain hFE min.: 25. Current Max 1: 0.5A. Series: SMBTA

Housing: SOT23. Frequency: 100MHz. Assembly/installation: SMD. Type of transistor: NPN. Polarity: bipolar. Voltage (collector - emitter): 25V. Collector current Ic [A]: 1.5A. Gain hfe: 200...350. Power: 300mW

NPN transistor, 1.5A, TO-92, TO-92 (Ammo-Pack), 25V. Collector current: 1.5A. Housing: TO-92. Housing (according to data sheet): TO-92 (Ammo-Pack). Collector/emitter voltage Vceo: 25V. BE diode: no. Cost): 9pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 200. Minimum hFE gain: 120. Marking on the case: S8050 C. Pd (Power Dissipation, Max): 1W. Technology: 'Epitaxial Silicon Transistor'. Type of transistor: NPN. Vcbo: 40V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 6V

NPN transistor, 0.5A, TO-92, TO-92, 20V. Collector current: 0.5A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 20V. BE diode: no. Cost): 28pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: Class B Push-pull Operation. Max hFE gain: 135. Minimum hFE gain: 96. Pd (Power Dissipation, Max): 0.625W. Spec info: excellent hFE linearity. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 40V. Saturation voltage VCE(sat): 0.16V. Maximum saturation voltage VCE(sat): 0.6V. Vebo: 5V

NPN transistor, 0.1A, 50V. Collector current: 0.1A. Collector/emitter voltage Vceo: 50V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 270 MHz. Function: general purpose. Pd (Power Dissipation, Max): 0.45W. Type of transistor: NPN

NPN transistor, 4A, TO-220, TO-220AB, 400V. Collector current: 4A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 400V. BE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: High voltage fast switching. Max hFE gain: 32. Minimum hFE gain: 15. Ic(pulse): 8A. Marking on the case: 13005A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 75W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 0.2us. Tf(min): 0.2us. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 0.5V. Vebo: 9V

NPN transistor, 8A, TO-220, TO-220AB, 400V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 400V. BE diode: no. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: High voltage fast switching. Max hFE gain: 30. Minimum hFE gain: 16. Ic(pulse): 16A. Marking on the case: 13007A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 80W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 350 ns. Tf(min): 40 ns. Type of transistor: NPN. Vcbo: 700V. Saturation voltage VCE(sat): 1.2V. Vebo: 9V

NPN transistor, 12A, TO-220, TO-220, 400V. Collector current: 12A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 400V. BE diode: no. BE resistor: 50. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. Function: hFE 15...28. Marking on the case: ST13009L. Pd (Power Dissipation, Max): 100W. RoHS: yes. Spec info: ST13009L. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 700V

NPN transistor. BE diode: no. Cost): 122pF. CE diode: no. Quantity per case: 1

NPN transistor, 1.5A, SOT-223 ( TO-226 ), SOT-223, 400V. Collector current: 1.5A. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Collector/emitter voltage Vceo: 400V. BE diode: no. CE diode: no. Conditioning: roll. Conditioning unit: 1000. Quantity per case: 1. Semiconductor material: silicon. Function: High voltage fast-switching power transistor. Max hFE gain: 32. Minimum hFE gain: 4. Ic(pulse): 3A. Marking on the case: N83003. Number of terminals: 3. Pd (Power Dissipation, Max): 1.6W. RoHS: yes. Spec info: complementary transistor (pair) STN93003. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -40...+150°C. Saturation voltage VCE(sat): 0.5V. Maximum saturation voltage VCE(sat): 1V

NPN transistor, 5A, SOT-223 ( TO-226 ), SOT-223, 60V. Collector current: 5A. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Collector/emitter voltage Vceo: 60V. BE diode: no. Cost): 215pF. CE diode: no. Conditioning: roll. Conditioning unit: 1000. Quantity per case: 1. Semiconductor material: silicon. FT: 130 MHz. Function: Low voltage fast-switching NPN power transistor. Max hFE gain: 350. Minimum hFE gain: 30. Ic(pulse): 10A. Number of terminals: 3. Pd (Power Dissipation, Max): 1.6W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 150V. Saturation voltage VCE(sat): 0.32V. Vebo: 7V

NPN transistor, 1A, TO-92, TO-92, 700V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 700V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: HIGH SWITCH. Pd (Power Dissipation, Max): 1.5W. Spec info: High-Speed. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 7A, ISOWATT218, ISOWATT218, 700V. Collector current: 7A. Housing: ISOWATT218. Housing (according to data sheet): ISOWATT218. Collector/emitter voltage Vceo: 700V. Quantity per case: 1. Semiconductor material: silicon. Function: High voltage fast switching. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1500V

NPN transistor, 8A, TO-220, TO-220, 100V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. BE diode: no. BE resistor: 8k Ohms (R1), 120 Ohms (R2). CE diode: yes. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: switching, audio amplifier. Max hFE gain: 20000. Minimum hFE gain: 1000. Ic(pulse): 15A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 80W. RoHS: yes. Spec info: complementary transistor (pair) TIP107. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 2V

NPN transistor, 2A, 60V. Collector current: 2A. Collector/emitter voltage Vceo: 60V. Darlington transistor?: yes. Semiconductor material: silicon. Max hFE gain: 1000. Minimum hFE gain: 500. Ic(pulse): 4A. Note: >1000. Temperature: +150°C. Pd (Power Dissipation, Max): 50W. RoHS: yes. Spec info: 10k Ohms (R1), 600 Ohms (R2). Type of transistor: NPN. Vcbo: 60V. Maximum saturation voltage VCE(sat): 2.5V. Vebo: 5V

NPN transistor, 4A, 80V. Collector current: 4A. Collector/emitter voltage Vceo: 80V. BE diode: no. Cost): 2pF. CE diode: no. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Note: >1000. Pd (Power Dissipation, Max): 50W. Spec info: TO-220. Type of transistor: NPN

NPN transistor, PCB soldering, TO-220AB, 5A. Housing: PCB soldering. Housing: TO-220AB. Collector current Ic [A], max.: 5A. RoHS: yes. Component family: Darlington NPN Power Transistor. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: TIP120. Collector-emitter voltage Uceo [V]: 60V. Maximum dissipation Ptot [W]: 65W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering, TO-220AB, 5A. Housing: PCB soldering. Housing: TO-220AB. Collector current Ic [A], max.: 5A. RoHS: yes. Component family: Darlington NPN Power Transistor. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: TIP122. Collector-emitter voltage Uceo [V]: 100V. Maximum dissipation Ptot [W]: 65W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, TO220, 100V. Housing: TO220. Collector-Emitter Voltage VCEO: 100V. Type: Darlington transistor. Polarity: NPN. Power: 65W. Collector-Base Voltage VCBO: 100V. Mounting Type: PCB through-hole mounting. DC Collector/Base Gain hFE min.: 1000. Current Max 1: 5A. Series: TIP122G

NPN transistor, PCB soldering, TO-220AB, 8A. Housing: PCB soldering. Housing: TO-220AB. Collector current Ic [A], max.: 8A. RoHS: yes. Component family: Darlington NPN Power Transistor. Housing (JEDEC standard): TO-220AB. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: TIP132. Collector-emitter voltage Uceo [V]: 100V. Maximum dissipation Ptot [W]: 70W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C