NPN bipolar transistors

NPN transistor, PCB soldering, TO-3, 20A, TO-3 ( TO-204 ), TO-3, 140V. Housing: PCB soldering. Housing: TO-3. Collector current Ic [A], max.: 20A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 140V. RoHS: yes. Component family: high voltage NPN transistor. Housing (JEDEC standard): TO-204AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJ15003G. Collector-emitter voltage Uceo [V]: 140V. Cutoff frequency ft [MHz]: 2 MHz. Maximum dissipation Ptot [W]: 250W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +200°C. Number of terminals: 2. Pd (Power Dissipation, Max): 250W. Spec info: complementary transistor (pair) MJ15004. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 140V. Saturation voltage VCE(sat): 1V. Vebo: 5V

NPN transistor, 15A, TO-3 ( TO-204 ), TO-3, 120V. Collector current: 15A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 120V. BE diode: no. BE resistor: 70. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 0.8 MHz. Pd (Power Dissipation, Max): 180W. Spec info: Motorola. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 200V

NPN transistor, 15A, TO-3 ( TO-204 ), TO-3, 120V. Collector current: 15A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 120V. BE diode: no. BE resistor: 70. CE diode: no. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 0.8 MHz. Max hFE gain: 70. Minimum hFE gain: 10. Number of terminals: 2. Pd (Power Dissipation, Max): 180W. RoHS: yes. Spec info: complementary transistor (pair) MJ15016. Assembly/installation: PCB through-hole mounting. Tf(max): 6us. Tf(min): 4us. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 200V. Saturation voltage VCE(sat): 1.1V. Vebo: 7V

NPN transistor, 16A, TO-3 ( TO-204 ), TO-3, 200V. Collector current: 16A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 200V. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Pd (Power Dissipation, Max): 250W. Spec info: complementary transistor (pair) MJ15023. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 350V

NPN transistor, 16A, TO-3 ( TO-204 ), TO-3, 200V. Collector current: 16A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 200V. BE diode: no. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: High Power Audio. Max hFE gain: 60. Minimum hFE gain: 15. Ic(pulse): 30A. Number of terminals: 2. Pd (Power Dissipation, Max): 250W. RoHS: yes. Spec info: complementary transistor (pair) MJ15023. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 350V. Saturation voltage VCE(sat): 1.4V. Vebo: 5V

NPN transistor, 16A, TO-3 ( TO-204 ), TO-3, 250V. Collector current: 16A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 250V. BE diode: no. Cost): 1.6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: High Power Audio. Max hFE gain: 60. Minimum hFE gain: 15. Ic(pulse): 30A. Number of terminals: 2. Pd (Power Dissipation, Max): 250W. RoHS: yes. Spec info: complementary transistor (pair) MJ15025. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+200°C. Vcbo: 400V. Saturation voltage VCE(sat): 1.4V. Vebo: 5V

NPN transistor, PCB soldering, TO-3, 16A. Housing: PCB soldering. Housing: TO-3. Collector current Ic [A], max.: 16A. RoHS: yes. Component family: high voltage NPN transistor. Housing (JEDEC standard): TO-204AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJ15024G. Collector-emitter voltage Uceo [V]: 250V. Cutoff frequency ft [MHz]: 4 MHz. Maximum dissipation Ptot [W]: 250W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +200°C

NPN transistor, PCB soldering, TO-3, 16A. Housing: PCB soldering. Housing: TO-3. Collector current Ic [A], max.: 16A. RoHS: yes. Component family: high voltage NPN transistor. Housing (JEDEC standard): TO-204AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJ21194G. Collector-emitter voltage Uceo [V]: 250V. Cutoff frequency ft [MHz]: 4 MHz. Maximum dissipation Ptot [W]: 250W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +200°C

NPN transistor, 16A, TO-3 ( TO-204 ), TO-3 ( TO-204AA ), 250V. Collector current: 16A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3 ( TO-204AA ). Collector/emitter voltage Vceo: 250V. BE diode: no. Cost): 2pF. CE diode: no. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Max hFE gain: 75. Minimum hFE gain: 25. Ic(pulse): 30A. Number of terminals: 2. Pd (Power Dissipation, Max): 250W. RoHS: yes. Spec info: complementary transistor (pair) MJ21195. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 400V. Saturation voltage VCE(sat): 1.4V

NPN transistor, 30A, TO-3 ( TO-204 ), TO-3, 100V. Collector current: 30A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 100V. BE diode: no. C(in): 30pF. Cost): 8.5pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Number of terminals: 2. Pd (Power Dissipation, Max): 200W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, PCB soldering, TO-3, 30A. Housing: PCB soldering. Housing: TO-3. Collector current Ic [A], max.: 30A. RoHS: yes. Component family: NPN power transistor. Housing (JEDEC standard): TO-204AA. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJ802G. Collector-emitter voltage Uceo [V]: 90V. Cutoff frequency ft [MHz]: 2 MHz. Maximum dissipation Ptot [W]: 200W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +200°C

NPN transistor, PCB soldering (SMD), D-PAK, 8A. Housing: PCB soldering (SMD). Housing: D-PAK. Collector current Ic [A], max.: 8A. RoHS: yes. Component family: NPN power transistor. Housing (JEDEC standard): TO-252. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: J44H11. Collector-emitter voltage Uceo [V]: 80V. Cutoff frequency ft [MHz]: 85 MHz. Maximum dissipation Ptot [W]: 20W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, PCB soldering (SMD), D-PAK, 8A. Housing: PCB soldering (SMD). Housing: D-PAK. Collector current Ic [A], max.: 8A. RoHS: yes. Component family: NPN power transistor. Housing (JEDEC standard): TO-252. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: J44H11. Collector-emitter voltage Uceo [V]: 80V. Cutoff frequency ft [MHz]: 85 MHz. Maximum dissipation Ptot [W]: 20W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, 8A, D-PAK ( TO-252 ), DPAK CASE 369C, 80V. Collector current: 8A. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): DPAK CASE 369C. Collector/emitter voltage Vceo: 80V. BE diode: no. Cost): 45pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 85 MHz. Function: Complementary power transistors. Max hFE gain: 40. Minimum hFE gain: 60. Ic(pulse): 16A. Marking on the case: 44H11G. Equivalents: MJD44H11G, MJD44H11J. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 20W. RoHS: yes. Spec info: complementary transistor (pair) MJD45H11T4G. Assembly/installation: surface-mounted component (SMD). Technology: 'Epitaxial Silicon Transistor'. Tf (type): 140 ns. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 80V. Maximum saturation voltage VCE(sat): 1V. Vebo: 5V

NPN transistor, 8A, D-PAK ( TO-252 ), DPAK CASE 369C, 80V. Collector current: 8A. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): DPAK CASE 369C. Collector/emitter voltage Vceo: 80V. BE diode: no. Cost): 45pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 85 MHz. Function: Complementary power transistors. Max hFE gain: 40. Minimum hFE gain: 60. Ic(pulse): 16A. Marking on the case: 45H11G. Equivalents: MJD45H11G, MJD45H11J. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 20W. RoHS: yes. Spec info: complementary transistor (pair) MJD45H11T4G. Assembly/installation: surface-mounted component (SMD). Technology: 'Epitaxial Silicon Transistor'. Tf (type): 140 ns. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 80V. Maximum saturation voltage VCE(sat): 1V. Vebo: 5V

NPN transistor, 4A, TO-220, TO-220AB, 400V. Collector current: 4A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 400V. BE diode: no. Cost): 3pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: S-L. Pd (Power Dissipation, Max): 75W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 700V

NPN transistor, 8A, TO-220, TO-220AB, 400V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 400V. BE diode: no. Cost): 80pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 14 MHz. Function: switching circuits. Max hFE gain: 40. Minimum hFE gain: 8. Ic(pulse): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 80W. RoHS: yes. Spec info: High Speed ​​Switching. Assembly/installation: PCB through-hole mounting. Technology: Bipolar Power Transistor. Tf(max): 0.7us. Tf(min): 0.23us. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Vebo: 9V

NPN transistor, 8A, TO-220, TO-220AB, 400V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 400V. BE diode: no. Cost): 3pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 14 MHz. Function: switching circuits. Max hFE gain: 40. Minimum hFE gain: 8. Ic(pulse): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 80W. RoHS: yes. Spec info: High Speed ​​Switching. Assembly/installation: PCB through-hole mounting. Technology: Bipolar Power Transistor. Tf(max): 0.7us. Tf(min): 0.23us. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 700V. Saturation voltage VCE(sat): 1V. Vebo: 9V

NPN transistor, 8A, 400V, 8A, TO-220AB. Collector current Ic [A], max.: 8A. Collector-Emitter Voltage VCEO: 400V. Collector current: 8A. Housing: TO-220AB. Manufacturer's marking: MJE13007G. Collector-emitter voltage Uceo [V]: 400V. Cutoff frequency ft [MHz]: 4 MHz. Maximum dissipation Ptot [W]: 80W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Type of transistor: Power Transistor. Polarity: NPN. Power: 80W. Max frequency: 14 MHz

NPN transistor, PCB soldering, TO-220, 12A. Housing: PCB soldering. Housing: TO-220. Collector current Ic [A], max.: 12A. RoHS: yes. Component family: high voltage NPN transistor. Housing (JEDEC standard): TO-220. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE13009G. Collector-emitter voltage Uceo [V]: 400V. Cutoff frequency ft [MHz]: 4 MHz. Maximum dissipation Ptot [W]: 100W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN transistor, 8A, TO-220, TO-220, 150V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 150V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: for audio amplifier. Max hFE gain: 40. Minimum hFE gain: 20. Ic(pulse): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Spec info: complementary transistor (pair) MJE15031. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 150V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN transistor, 8A, TO-220, TO-220AB, 150V, 150V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 150V. Collector-Emitter Voltage VCEO: 150V. Semiconductor material: silicon. FT: 30 MHz. Function: for audio amplifier. Max hFE gain: 40. Minimum hFE gain: 20. Ic(pulse): 16A. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Spec info: complementary transistor (pair) MJE15031G. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 150V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V. Type of transistor: NPN power transistor. Polarity: NPN. Power: 50W. Max frequency: 30MHz

NPN transistor, 250V, 8A, TO-220. Collector-Emitter Voltage VCEO: 250V. Collector current: 8A. Housing: TO-220. Type of transistor: NPN power transistor. Polarity: NPN. Power: 50W. Max frequency: 30MHz

NPN transistor, TO-220, 8A, TO-220AB, 250V, 250V, 8A. Housing: TO-220. Collector current Ic [A], max.: 8A. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 250V. Collector-Emitter Voltage VCEO: 250V. Collector current: 8A. RoHS: yes. Manufacturer's marking: MJE15032G. Collector-emitter voltage Uceo [V]: 250V. Cutoff frequency ft [MHz]: 30 MHz. Maximum dissipation Ptot [W]: 50W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. Spec info: complementary transistor (pair) MJE15033. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -65...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V. Type of transistor: NPN power transistor. Polarity: NPN. Power: 50W. Max frequency: 30MHz

NPN transistor, 4A, TO-220, TO-220AB, 350V. Collector current: 4A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 350V. BE diode: no. Cost): 2.5pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: hFE=100 (Min) @ IC=0.5Adc. Pd (Power Dissipation, Max): 50W. Spec info: complementary transistor (pair) MJE15035G. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN