NPN bipolar transistors

NPN transistor, 2A, TO-220, TO-220, 300V. Collector current: 2A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 300V. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: S-L. Minimum hFE gain: 30. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Tf(max): 1us. Tf(min): 1us. Type of transistor: NPN. Vcbo: 300V. Saturation voltage VCE(sat): 1V. Vebo: 6V

NPN transistor, PCB soldering, TO-92, 50mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 50mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 40V/25V. Maximum dissipation Ptot [W]: 0.25W

NPN transistor, PCB soldering, D18/C, 700mA. Housing: PCB soldering. Housing: D18/C. Collector current Ic [A], max.: 700mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 40V/32V. Maximum dissipation Ptot [W]: 0.75W

NPN transistor, PCB soldering, E-33, 50mA. Housing: PCB soldering. Housing: E-33. Collector current Ic [A], max.: 50mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 40V/25V. Maximum dissipation Ptot [W]: 0.25W

NPN transistor, 1.5A, TO-220, TO-220, 150V. Collector current: 1.5A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 150V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. Spec info: complementary transistor (pair) 2SA940. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 3A, TO-220, TO-220, 80V. Collector current: 3A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 80V. Quantity per case: 1. Semiconductor material: silicon. FT: 27 MHz. Pd (Power Dissipation, Max): 4W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 4A, TO-220, TO-220, 75V. Collector current: 4A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 75V. Quantity per case: 1. Semiconductor material: silicon. FT: 27 MHz. Pd (Power Dissipation, Max): 6W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, PCB soldering, TO-92, 30mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 30mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30V/20V. Maximum dissipation Ptot [W]: 0.25W

NPN transistor, 0.05A, TO-92, TO-92M ( 9mm ), 200V. Collector current: 0.05A. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 200V. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Function: audio/video. Number of terminals: 3. Pd (Power Dissipation, Max): 0.8W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 0.8A, TO-92, TO-92MOD ( 2-5J1A ), 120V. Collector current: 0.8A. Housing: TO-92. Housing (according to data sheet): TO-92MOD ( 2-5J1A ). Collector/emitter voltage Vceo: 120V. BE diode: no. Cost): 30pF. CE diode: no. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Max hFE gain: 240. Minimum hFE gain: 120. Marking on the case: C2235 Y. Number of terminals: 3. Pd (Power Dissipation, Max): 0.9W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -...+150°C. Vcbo: 120V. Maximum saturation voltage VCE(sat): 1V. Vebo: 5V

NPN transistor, 1.5A, TO-92, TO-92M ( 9mm ), 30 v. Collector current: 1.5A. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 30 v. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 120MHz. Max hFE gain: 320. Minimum hFE gain: 100. Pd (Power Dissipation, Max): 900mW. Spec info: complementary transistor (pair) 2SA966. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 30 v. Maximum saturation voltage VCE(sat): 1V. Vebo: 5V

NPN transistor, 1.5A, TO-220, 160V. Collector current: 1.5A. Housing: TO-220. Collector/emitter voltage Vceo: 160V. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Pd (Power Dissipation, Max): 25W. Spec info: complementary transistor (pair) 2SA968. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 0.1A, TO-92, TO-92, 120V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 120V. BE diode: no. Cost): 3pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: Low noise, Audio amplifier. Max hFE gain: 700. Minimum hFE gain: 350. Marking on the case: C2240BL. Number of terminals: 3. Temperature: +125°C. Pd (Power Dissipation, Max): 0.3W. RoHS: yes. Spec info: complementary transistor (pair) 2SA970BL. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type (PCT Process)'. Type of transistor: NPN. Operating temperature: -55...+125°C. Vcbo: 120V. Saturation voltage VCE(sat): 0.3V. Vebo: 5V

NPN transistor, 0.1A, TO-92, TO-92, 120V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 120V. BE diode: no. Cost): 3pF. CE diode: no. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 400. Minimum hFE gain: 200. Marking on the case: C224GR. Number of terminals: 3. Pd (Power Dissipation, Max): 0.3W. RoHS: yes. Spec info: complementary transistor (pair) 2SA970GR. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type (PCT Process)'. Type of transistor: NPN. Operating temperature: -55...+125°C. Vcbo: 120V. Saturation voltage VCE(sat): 0.3V. Vebo: 5V

NPN transistor, PCB soldering, TO-92, 500mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 500mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 60V/50V. Maximum dissipation Ptot [W]: 0.6W

NPN transistor, 1.5A, TO-220, TO-220, 120V. Collector current: 1.5A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 120V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 320. Minimum hFE gain: 35. Ic(pulse): 3A. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 120V. Saturation voltage VCE(sat): 0.3V. Vebo: 5V

NPN transistor, 0.1A, 300V. Collector current: 0.1A. Collector/emitter voltage Vceo: 300V. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Function: VID-L. Type of transistor: NPN

NPN transistor, PCB soldering, TO-236, 30mA. Housing: PCB soldering. Housing: TO-236. Collector current Ic [A], max.: 30mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30V/20V. Maximum dissipation Ptot [W]: 0.2W

NPN transistor, 7A, TO-220, TO-220, 400V. Collector current: 7A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 400V. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 65W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 500V

NPN transistor, 1.5A, TO-220, TO-220AB, 160V. Collector current: 1.5A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 160V. BE diode: no. Cost): 30pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100MHz. Function: High-Voltage Switching, AF Power Amplifier. Max hFE gain: 200. Minimum hFE gain: 60. Ic(pulse): 3A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 25W. Spec info: complementary transistor (pair) 2SA1011. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 180V. Saturation voltage VCE(sat): 0.5V. Vebo: 6V

NPN transistor, PCB soldering, TO-92, 30mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 30mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 30V/20V. Maximum dissipation Ptot [W]: 0.25W

NPN transistor, PCB soldering, TO-92, 50mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 50mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 120V/100V. Maximum dissipation Ptot [W]: 0.5W

NPN transistor, 1A, TO-92, TO-92M ( 9mm ), 160V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 160V. BE diode: no. Cost): 20pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Function: CTV-NF/VA. Max hFE gain: 320. Minimum hFE gain: 160. Marking on the case: C2383 Y. Number of terminals: 3. Pd (Power Dissipation, Max): 0.9W. Spec info: complementary transistor (pair) 2SA1013. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 160V. Saturation voltage VCE(sat): 1.5V. Vebo: 6V

NPN transistor, 0.05A, TO-92, 80V. Collector current: 0.05A. Housing: TO-92. Collector/emitter voltage Vceo: 80V. BE diode: no. Cost): 2.5pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 140 MHz. Function: general purpose. Max hFE gain: 820. Minimum hFE gain: 180. Pd (Power Dissipation, Max): 0.3W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 80V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN transistor, 0.15A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 50V. Collector current: 0.15A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 50V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 180 MHz. Max hFE gain: 390. Minimum hFE gain: 180. Note: screen printing/SMD code BQ. Marking on the case: BQ. Number of terminals: 3. Temperature: +155°C. Pd (Power Dissipation, Max): 200mW. Spec info: complementary transistor (pair) 2SA1037. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Vcbo: 60V. Saturation voltage VCE(sat): 400mV