NPN bipolar transistors

NPN transistor, 6A, TO-3P ( TO-218 SOT-93 ), TO-3PB, 800V. Collector current: 6A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3PB. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Function: S-L. Pd (Power Dissipation, Max): 100W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 900V

NPN transistor, PCB soldering, TO-220, 10A. Housing: PCB soldering. Housing: TO-220. Collector current Ic [A], max.: 10A. RoHS: no. Component family: NPN power transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2SC3157. Collector-emitter voltage Uceo [V]: 100V. Maximum dissipation Ptot [W]: 60W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN transistor, 10A, TO-3P ( TO-218 SOT-93 ), TO-3P, 140V. Collector current: 10A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 140V. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Number of terminals: 3. Pd (Power Dissipation, Max): 100W. RoHS: yes. Spec info: complementary transistor (pair) 2SA1265. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 0.02A, 40V. Collector current: 0.02A. Collector/emitter voltage Vceo: 40V. Quantity per case: 1. Semiconductor material: silicon. FT: 550 MHz. Type of transistor: NPN

NPN transistor, 0.05A, TO-92, TO-92, 30 v. Collector current: 0.05A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. Semiconductor material: silicon. FT: 660 MHz. Function: TV-ZF. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 0.15A, TO-92, TO-92, 60V. Collector current: 0.15A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 60V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 130 MHz. Function: general purpose. Marking on the case: C3198. Number of terminals: 3. Pd (Power Dissipation, Max): 0.4W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, TO-92, 150mA, TO-92, 50V. Housing: TO-92. Collector current: 150mA. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. BE diode: no. Cost): 3.5pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Function: general purpose. Max hFE gain: 700. Minimum hFE gain: 70. Number of terminals: 3. Temperature: +125°C. Pd (Power Dissipation, Max): 0.2W. Spec info: replacement KTA1267. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 50V. Saturation voltage VCE(sat): 0.1V. Vebo: 5V

NPN transistor, 2A, TO-92, TO-92MOD ( 2-5J1A ), 40V. Collector current: 2A. Housing: TO-92. Housing (according to data sheet): TO-92MOD ( 2-5J1A ). Collector/emitter voltage Vceo: 40V. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: Hi-Beta, lo-sat.. Minimum hFE gain: 500. Note: 9mm. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.9W. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type'. Tf(max): 1.2us. Tf(min): 1us. Type of transistor: NPN. Vcbo: 40V. Saturation voltage VCE(sat): 0.3V. Vebo: 7V

NPN transistor, 15A, 230V, TO-3P ( TO-218 SOT-93 ), SOT-93. Collector current: 15A. Collector/emitter voltage Vceo: 230V. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): SOT-93. Quantity per case: 1. Semiconductor material: silicon. FT: 60 MHz. Pd (Power Dissipation, Max): 130W. Spec info: complementary transistor (pair) 2SA1294. Type of transistor: NPN. BE diode: no. Cost): 250pF. CE diode: no. Max hFE gain: 140. Minimum hFE gain: 40. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -55...+150°C. Vcbo: 230V. Maximum saturation voltage VCE(sat): 2V. Vebo: 5V

NPN transistor, 17A, 230V. Collector current: 17A. Collector/emitter voltage Vceo: 230V. Quantity per case: 1. Semiconductor material: silicon. FT: 60 MHz. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. Spec info: complementary transistor (pair) 2SA1295. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 15A, TO-264 ( TOP-3L ), TO-264, 200V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Collector/emitter voltage Vceo: 200V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: NF-E HI-FI. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. RoHS: yes. Spec info: complementary transistor (pair) 2SA1302. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 14A, TO-3P ( TO-218 SOT-93 ), TO-3P, 150V. Collector current: 14A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 150V. Quantity per case: 1. Semiconductor material: silicon. FT: 60 MHz. Pd (Power Dissipation, Max): 125W. RoHS: yes. Spec info: complementary transistor (pair) 2SA1303. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 1.5A, TO-220FP, 160V. Collector current: 1.5A. Housing: TO-220FP. Collector/emitter voltage Vceo: 160V. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: insulated package transistor. Max hFE gain: 240. Minimum hFE gain: 70. Pd (Power Dissipation, Max): 20W. Spec info: complementary transistor (pair) 2SA1306. Type of transistor: NPN. Vcbo: 160V. Vebo: 5V

NPN transistor, 5A, TO-251 ( I-Pak ), TO-251AA ( I-PAK ), 80V. Collector current: 5A. Housing: TO-251 ( I-Pak ). Housing (according to data sheet): TO-251AA ( I-PAK ). Collector/emitter voltage Vceo: 80V. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Function: High Speed ​​Switching. Max hFE gain: 240. Minimum hFE gain: 70. Ic(pulse): 8A. Marking on the case: C3303. Number of terminals: 2. Temperature: +150°C. Pd (Power Dissipation, Max): 20W. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Type (PCT Process)'. Tf(max): 0.1us. Tf(min): 0.1us. Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 0.2V. Vebo: 7V

NPN transistor, 5A, D-PAK ( TO-252 ), TO-252 ( D-PAK ), 100V. Collector current: 5A. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( D-PAK ). Collector/emitter voltage Vceo: 100V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Function: NF/SL. Ic(pulse): 8A. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN. Vcbo: 100V. Saturation voltage VCE(sat): 0.2V. Maximum saturation voltage VCE(sat): 0.4V. Vebo: 8V

NPN transistor, 0.7A, 180V. Collector current: 0.7A. Collector/emitter voltage Vceo: 180V. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Function: High-Voltage Switching Applications. Note: hFE 140...280. Pd (Power Dissipation, Max): 0.7W. Spec info: complementary transistor (pair) 2SA1319. Type of transistor: NPN

NPN transistor, 5A, 500V. Collector current: 5A. Collector/emitter voltage Vceo: 500V. Quantity per case: 1. Semiconductor material: silicon. Pd (Power Dissipation, Max): 40W. Type of transistor: NPN. Vcbo: 900V

NPN transistor, 0.1A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 20V. Collector current: 0.1A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 20V. Quantity per case: 1. Semiconductor material: silicon. Function: UHF. Number of terminals: 3. Pd (Power Dissipation, Max): 0.2W. Assembly/installation: surface-mounted component (SMD). Type of transistor: NPN

NPN transistor, PCB soldering, TO-92, 200mA. Housing: PCB soldering. Housing: TO-92. Collector current Ic [A], max.: 200mA. RoHS: no. Component family: NPN bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Collector-emitter voltage Uceo [V]: 60V/50V. Maximum dissipation Ptot [W]: 0.4W

NPN transistor, 0.1A, 50V. Collector current: 0.1A. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. Type of transistor: NPN

NPN transistor, 0.1A, TO-92, TO-92, 50V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. Function: 250 MHz. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 0.05A, TO-126F, TO-126F, 150V. Collector current: 0.05A. Housing: TO-126F. Housing (according to data sheet): TO-126F. Collector/emitter voltage Vceo: 150V. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: NF-L. Pd (Power Dissipation, Max): 5W. Spec info: complementary transistor (pair) 2SA1360. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN

NPN transistor, 3A, TO-220, TO-220AB, 800V. Collector current: 3A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Function: hFE 15...30. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1100V

NPN transistor, 3A, TO-220, TO-220AB, 800V. Collector current: 3A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Function: hFE 20...40. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 1100V

NPN transistor, 6A, TO-3P ( TO-218 SOT-93 ), TO-3PB, 800V. Collector current: 6A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3PB. Collector/emitter voltage Vceo: 800V. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Function: Switching Regulator Applications. Max hFE gain: 40. Minimum hFE gain: 10. Ic(pulse): 20A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 100W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Silicon Transistor'. Tf(max): 0.3us. Type of transistor: NPN. Vcbo: 1100V. Saturation voltage VCE(sat): 2V. Vebo: 7V