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Semiconductors Transistors PNP bipolar transistors

NPN-Transistor, 0.6A, TO-39 ( TO-205 ), TO-39, 40V - 2N2904

NPN-Transistor, 0.6A, TO-39 ( TO-205 ), TO-39, 40V - 2N2904
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.90$ 2.05$
5 - 9 1.80$ 1.95$
10 - 24 1.71$ 1.85$
25 - 49 1.61$ 1.74$
50 - 99 1.57$ 1.70$
100 - 213 1.54$ 1.66$
Quantity U.P
1 - 4 1.90$ 2.05$
5 - 9 1.80$ 1.95$
10 - 24 1.71$ 1.85$
25 - 49 1.61$ 1.74$
50 - 99 1.57$ 1.70$
100 - 213 1.54$ 1.66$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 213
Set of 1

NPN-Transistor, 0.6A, TO-39 ( TO-205 ), TO-39, 40V - 2N2904. NPN-Transistor, 0.6A, TO-39 ( TO-205 ), TO-39, 40V. Collector current: 0.6A. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Collector/emitter voltage Vceo: 40V. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: Switching Transistor. Max hFE gain: 120. Minimum hFE gain: 20. Number of terminals: 3. Pd (Power Dissipation, Max): 0.6W. Assembly/installation: PCB through-hole mounting. Tf(max): 200 ns. Tf(min): 175 ns. Type of transistor: PNP. Operating temperature: -65...+200°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Quantity in stock updated on 27/04/2025, 15:25.

Technical documentation

Equivalent products :

Quantity in stock : 64
2N2904A

2N2904A

NPN-Transistor, 0.6A, TO-39 ( TO-205 ), TO-39, 60V. Collector current: 0.6A. Housing: TO-39 ( TO-205...
2N2904A
NPN-Transistor, 0.6A, TO-39 ( TO-205 ), TO-39, 60V. Collector current: 0.6A. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: Switching Transistor. Max hFE gain: 120. Minimum hFE gain: 40. Number of terminals: 3. Pd (Power Dissipation, Max): 0.6W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+200°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. BE diode: no. CE diode: no
2N2904A
NPN-Transistor, 0.6A, TO-39 ( TO-205 ), TO-39, 60V. Collector current: 0.6A. Housing: TO-39 ( TO-205 ). Housing (according to data sheet): TO-39. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: Switching Transistor. Max hFE gain: 120. Minimum hFE gain: 40. Number of terminals: 3. Pd (Power Dissipation, Max): 0.6W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+200°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. BE diode: no. CE diode: no
Set of 1
0.91$ VAT incl.
(0.84$ excl. VAT)
0.91$

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2N2219A

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2N2905A

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2N2904

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BCY59

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BC182B

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