Quantity (Set of 10) | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 0.90$ | 0.97$ |
2 - 2 | 0.85$ | 0.92$ |
3 - 4 | 0.81$ | 0.88$ |
5 - 9 | 0.76$ | 0.82$ |
10 - 24 | 0.72$ | 0.78$ |
25 - 49 | 0.67$ | 0.72$ |
50 - 163 | 0.63$ | 0.68$ |
Quantity (Set of 10) | U.P | |
---|---|---|
1 - 1 | 0.90$ | 0.97$ |
2 - 2 | 0.85$ | 0.92$ |
3 - 4 | 0.81$ | 0.88$ |
5 - 9 | 0.76$ | 0.82$ |
10 - 24 | 0.72$ | 0.78$ |
25 - 49 | 0.67$ | 0.72$ |
50 - 163 | 0.63$ | 0.68$ |
NPN-Transistor, TO-92, 100mA, TO-92, 50V - BC212B. NPN-Transistor, TO-92, 100mA, TO-92, 50V. Housing: TO-92. Collector current: 100mA. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. Resistor B: PNP transistor. BE resistor: -50V. C(in): -0.1A. Cost): 1W. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 280 MHz. Max hFE gain: 400. Minimum hFE gain: 200. Number of terminals: 3. Pd (Power Dissipation, Max): 350mW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.1V. Vebo: 5V. BE diode: no. CE diode: no. Quantity in stock updated on 27/04/2025, 08:25.
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