Quantity (Set of 10) | excl. VAT | VAT incl. |
---|---|---|
1 - 1 | 0.93$ | 1.01$ |
2 - 2 | 0.88$ | 0.95$ |
3 - 4 | 0.83$ | 0.90$ |
5 - 9 | 0.81$ | 0.88$ |
10 - 24 | 0.79$ | 0.85$ |
25 - 49 | 0.74$ | 0.80$ |
50 - 105 | 0.70$ | 0.76$ |
Quantity (Set of 10) | U.P | |
---|---|---|
1 - 1 | 0.93$ | 1.01$ |
2 - 2 | 0.88$ | 0.95$ |
3 - 4 | 0.83$ | 0.90$ |
5 - 9 | 0.81$ | 0.88$ |
10 - 24 | 0.79$ | 0.85$ |
25 - 49 | 0.74$ | 0.80$ |
50 - 105 | 0.70$ | 0.76$ |
NPN-Transistor, 100mA, TO-92, TO-92, 50V - BC212B. NPN-Transistor, 100mA, TO-92, TO-92, 50V. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. BE diode: no. CE diode: no. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 280 MHz. Max hFE gain: 400. Minimum hFE gain: 200. Number of terminals: 3. Pd (Power Dissipation, Max): 350mW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.1V. Vebo: 5V. Resistor B: PNP transistor. BE resistor: -50V. C(in): -0.1A. Cost): 1W. Quantity in stock updated on 15/06/2025, 16:25.
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