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Semiconductors Transistors NPN bipolar transistors

NPN transistor, 6A, TO-220, TO-220, 110V - 2SB1659-2SD2589

NPN transistor, 6A, TO-220, TO-220, 110V - 2SB1659-2SD2589
Quantity excl. VAT VAT incl.
1 - 1 13.14$ 14.20$
2 - 2 12.48$ 13.49$
3 - 4 12.22$ 13.21$
5 - 9 11.83$ 12.79$
10 - 19 11.56$ 12.50$
20 - 29 11.17$ 12.07$
30+ 10.77$ 11.64$
Quantity U.P
1 - 1 13.14$ 14.20$
2 - 2 12.48$ 13.49$
3 - 4 12.22$ 13.21$
5 - 9 11.83$ 12.79$
10 - 19 11.56$ 12.50$
20 - 29 11.17$ 12.07$
30+ 10.77$ 11.64$
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

NPN transistor, 6A, TO-220, TO-220, 110V - 2SB1659-2SD2589. NPN transistor, 6A, TO-220, TO-220, 110V. Collector current: 6A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 110V. Darlington transistor?: yes. Quantity per case: 1+1. Semiconductor material: silicon. FT: 100 MHz. Pd (Power Dissipation, Max): 50W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP & NPN. Original product from manufacturer Sanken. Quantity in stock updated on 15/06/2025, 19:25.

Equivalent products :

Quantity in stock : 2
2SD2589

2SD2589

NPN transistor, 6A, TO-220, TO-220, 110V. Collector current: 6A. Housing: TO-220. Housing (according...
2SD2589
NPN transistor, 6A, TO-220, TO-220, 110V. Collector current: 6A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 110V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 60 MHz. Function: TO-220. Max hFE gain: 12000. Minimum hFE gain: 5000. Marking on the case: D2589. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Spec info: complementary transistor (pair) 2SB1659. Assembly/installation: PCB through-hole mounting. Tf(max): 1.1us. Tf(min): 1.1us. Type of transistor: NPN. Vcbo: 110V. Saturation voltage VCE(sat): 2.5V
2SD2589
NPN transistor, 6A, TO-220, TO-220, 110V. Collector current: 6A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 110V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 60 MHz. Function: TO-220. Max hFE gain: 12000. Minimum hFE gain: 5000. Marking on the case: D2589. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Spec info: complementary transistor (pair) 2SB1659. Assembly/installation: PCB through-hole mounting. Tf(max): 1.1us. Tf(min): 1.1us. Type of transistor: NPN. Vcbo: 110V. Saturation voltage VCE(sat): 2.5V
Set of 1
13.31$ VAT incl.
(12.31$ excl. VAT)
13.31$
Out of stock
2SB1659

2SB1659

NPN-Transistor, 6A, TO-220, MT-25 (TO220), 110V. Collector current: 6A. Housing: TO-220. Housing (ac...
2SB1659
NPN-Transistor, 6A, TO-220, MT-25 (TO220), 110V. Collector current: 6A. Housing: TO-220. Housing (according to data sheet): MT-25 (TO220). Collector/emitter voltage Vceo: 110V. BE diode: no. Cost): 100pF. CE diode: no. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Minimum hFE gain: 5000. Pd (Power Dissipation, Max): 50W. Spec info: complementary transistor (pair) 2SD2589. Type of transistor: PNP. Vcbo: 110V. Maximum saturation voltage VCE(sat): 2.5V. Vebo: 5V
2SB1659
NPN-Transistor, 6A, TO-220, MT-25 (TO220), 110V. Collector current: 6A. Housing: TO-220. Housing (according to data sheet): MT-25 (TO220). Collector/emitter voltage Vceo: 110V. BE diode: no. Cost): 100pF. CE diode: no. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Minimum hFE gain: 5000. Pd (Power Dissipation, Max): 50W. Spec info: complementary transistor (pair) 2SD2589. Type of transistor: PNP. Vcbo: 110V. Maximum saturation voltage VCE(sat): 2.5V. Vebo: 5V
Set of 1
12.02$ VAT incl.
(11.12$ excl. VAT)
12.02$

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