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Semiconductors Transistors NPN bipolar transistors

NPN transistor, 1.5A, TO-220, 160V - 2SC2238

NPN transistor, 1.5A, TO-220, 160V - 2SC2238
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 2.36$ 2.55$
5 - 9 2.24$ 2.42$
10 - 24 2.17$ 2.35$
25 - 49 2.12$ 2.29$
50 - 99 2.08$ 2.25$
100 - 249 2.00$ 2.16$
250+ 1.93$ 2.09$
Quantity U.P
1 - 4 2.36$ 2.55$
5 - 9 2.24$ 2.42$
10 - 24 2.17$ 2.35$
25 - 49 2.12$ 2.29$
50 - 99 2.08$ 2.25$
100 - 249 2.00$ 2.16$
250+ 1.93$ 2.09$
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

NPN transistor, 1.5A, TO-220, 160V - 2SC2238. NPN transistor, 1.5A, TO-220, 160V. Collector current: 1.5A. Housing: TO-220. Collector/emitter voltage Vceo: 160V. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Pd (Power Dissipation, Max): 25W. Spec info: complementary transistor (pair) 2SA968. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Original product from manufacturer Pmc. Quantity in stock updated on 16/06/2025, 13:25.

Technical documentation

Equivalent products :

Out of stock
2SC2344

2SC2344

NPN transistor, 1.5A, TO-220, TO-220AB, 160V. Collector current: 1.5A. Housing: TO-220. Housing (acc...
2SC2344
NPN transistor, 1.5A, TO-220, TO-220AB, 160V. Collector current: 1.5A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 160V. BE diode: no. Cost): 30pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100MHz. Function: High-Voltage Switching, AF Power Amplifier. Max hFE gain: 200. Minimum hFE gain: 60. Ic(pulse): 3A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 25W. Spec info: complementary transistor (pair) 2SA1011. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 180V. Saturation voltage VCE(sat): 0.5V. Vebo: 6V
2SC2344
NPN transistor, 1.5A, TO-220, TO-220AB, 160V. Collector current: 1.5A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 160V. BE diode: no. Cost): 30pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100MHz. Function: High-Voltage Switching, AF Power Amplifier. Max hFE gain: 200. Minimum hFE gain: 60. Ic(pulse): 3A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 25W. Spec info: complementary transistor (pair) 2SA1011. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Vcbo: 180V. Saturation voltage VCE(sat): 0.5V. Vebo: 6V
Set of 1
5.82$ VAT incl.
(5.38$ excl. VAT)
5.82$

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