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1 - 9 | 0.41$ | 0.44$ |
10 - 24 | 0.38$ | 0.41$ |
25 - 49 | 0.37$ | 0.40$ |
50 - 99 | 0.36$ | 0.39$ |
100 - 249 | 0.36$ | 0.39$ |
250 - 499 | 0.34$ | 0.37$ |
500 - 1952 | 0.33$ | 0.36$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.41$ | 0.44$ |
10 - 24 | 0.38$ | 0.41$ |
25 - 49 | 0.37$ | 0.40$ |
50 - 99 | 0.36$ | 0.39$ |
100 - 249 | 0.36$ | 0.39$ |
250 - 499 | 0.34$ | 0.37$ |
500 - 1952 | 0.33$ | 0.36$ |
NPN transistor, 1.2A, TO-92, TO-92 ( Ammo Pack ), 30 v, 30V - BC517_D74Z. NPN transistor, 1.2A, TO-92, TO-92 ( Ammo Pack ), 30 v, 30V. Collector current: 1.2A. Housing: TO-92. Housing (according to data sheet): TO-92 ( Ammo Pack ). Collector/emitter voltage Vceo: 30 v. Collector-Emitter Voltage VCEO: 30V. Semiconductor material: silicon. FT: 200MHz. Minimum hFE gain: 30000. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Spec info: complementary transistor (pair) BC516. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 40V. Maximum saturation voltage VCE(sat): 1V. Vebo: 10V. Type of transistor: NPN transistor. Polarity: NPN. Type: Darlington transistor. Power: 0.625W. Original product from manufacturer ON Semiconductor. Quantity in stock updated on 18/06/2025, 19:25.
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