Quantity (Set of 10) | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 0.80$ | 0.86$ |
5 - 9 | 0.76$ | 0.82$ |
10 - 24 | 0.72$ | 0.78$ |
25 - 49 | 0.70$ | 0.76$ |
50 - 99 | 0.68$ | 0.74$ |
100 - 149 | 0.64$ | 0.69$ |
150 - 1000000 | 0.61$ | 0.66$ |
Quantity (Set of 10) | U.P | |
---|---|---|
1 - 4 | 0.80$ | 0.86$ |
5 - 9 | 0.76$ | 0.82$ |
10 - 24 | 0.72$ | 0.78$ |
25 - 49 | 0.70$ | 0.76$ |
50 - 99 | 0.68$ | 0.74$ |
100 - 149 | 0.64$ | 0.69$ |
150 - 1000000 | 0.61$ | 0.66$ |
NPN-Transistor, 100mA, TO-92, TO-92, 30 v - BC558C. NPN-Transistor, 100mA, TO-92, TO-92, 30 v. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: Switching, and AF Amplifier. Max hFE gain: 800. Minimum hFE gain: 420. Ic(pulse): 200mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 30 v. Saturation voltage VCE(sat): 0.08V. Vebo: 5V. Quantity in stock updated on 16/06/2025, 21:25.
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