NPN-Transistor, 0.15A, 60V - KSA733-Y
| Quantity | excl. VAT | VAT incl. |
|---|---|---|
| 1 - 9 | 0.63$ | 0.68$ |
| 10 - 24 | 0.60$ | 0.65$ |
| 25 - 49 | 0.57$ | 0.62$ |
| 50 - 99 | 0.54$ | 0.58$ |
| 100 - 249 | 0.53$ | 0.57$ |
| 250 - 499 | 0.51$ | 0.55$ |
| 500+ | 0.49$ | 0.53$ |
| Quantity | U.P | |
|---|---|---|
| 1 - 9 | 0.63$ | 0.68$ |
| 10 - 24 | 0.60$ | 0.65$ |
| 25 - 49 | 0.57$ | 0.62$ |
| 50 - 99 | 0.54$ | 0.58$ |
| 100 - 249 | 0.53$ | 0.57$ |
| 250 - 499 | 0.51$ | 0.55$ |
| 500+ | 0.49$ | 0.53$ |
Delivery in 2-3 days, with postal tracking!
NPN-Transistor, 0.15A, 60V - KSA733-Y. NPN-Transistor, 0.15A, 60V. Collector current: 0.15A. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 180 MHz. Pd (Power Dissipation, Max): 0.25W. Type of transistor: PNP. Quantity in stock updated on 29/04/2025, 13:25.
Equivalent products :
BC212B
NPN-Transistor, TO-92, 100mA, TO-92, 50V. Housing: TO-92. Collector current: 100mA. Housing (accordi...
NPN-Transistor, TO-92, 100mA, TO-92, 50V. Housing: TO-92. Collector current: 100mA. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. Resistor B: PNP transistor. BE resistor: -50V. C(in): -0.1A. Cost): 1W. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 280 MHz. Max hFE gain: 400. Minimum hFE gain: 200. Number of terminals: 3. Pd (Power Dissipation, Max): 350mW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.1V. Vebo: 5V. BE diode: no. CE diode: no
NPN-Transistor, TO-92, 100mA, TO-92, 50V. Housing: TO-92. Collector current: 100mA. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. Resistor B: PNP transistor. BE resistor: -50V. C(in): -0.1A. Cost): 1W. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 280 MHz. Max hFE gain: 400. Minimum hFE gain: 200. Number of terminals: 3. Pd (Power Dissipation, Max): 350mW. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.1V. Vebo: 5V. BE diode: no. CE diode: no
2SA733
NPN-Transistor, 0.1A, TO-92, TO-92, 60V. Collector current: 0.1A. Housing: TO-92. Housing (according...
NPN-Transistor, 0.1A, TO-92, TO-92, 60V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 180 MHz. Function: general purpose. Max hFE gain: 400. Minimum hFE gain: 200. Ic(pulse): 0.5A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 60V. Vebo: 5V
NPN-Transistor, 0.1A, TO-92, TO-92, 60V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 180 MHz. Function: general purpose. Max hFE gain: 400. Minimum hFE gain: 200. Ic(pulse): 0.5A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 60V. Vebo: 5V
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