Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 2.49$ | 2.69$ |
5 - 9 | 2.37$ | 2.56$ |
10 - 24 | 2.24$ | 2.42$ |
25 - 49 | 2.12$ | 2.29$ |
50 - 54 | 2.07$ | 2.24$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 2.49$ | 2.69$ |
5 - 9 | 2.37$ | 2.56$ |
10 - 24 | 2.24$ | 2.42$ |
25 - 49 | 2.12$ | 2.29$ |
50 - 54 | 2.07$ | 2.24$ |
NPN transistor, 3A, TO-220FP, TO-220, 60V - KSD2012GTU. NPN transistor, 3A, TO-220FP, TO-220, 60V. Collector current: 3A. Housing: TO-220FP. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 60V. Cost): 35pF. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Max hFE gain: 320. Minimum hFE gain: 150. Marking on the case: D2012-G. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. Assembly/installation: PCB through-hole mounting. Technology: Silicon NPN Triple Diffused Type. Type of transistor: NPN. Operating temperature: -55°C to +150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Maximum saturation voltage VCE(sat): 1V. Vebo: 7V. Spec info: complementary transistor (pair) KSB1366. BE diode: no. CE diode: no. Quantity in stock updated on 28/04/2025, 18:25.
Information and technical help
Payment and delivery
Delivery in 2-3 days, with postal tracking!
All rights reserved, RPtronics, 2024.