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NPN transistor, 20mA, TO-92, TO-92, 30 v - KTC9018

NPN transistor, 20mA, TO-92, TO-92, 30 v - KTC9018
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 9 0.84$ 0.91$
10 - 24 0.79$ 0.85$
25 - 49 0.75$ 0.81$
50 - 99 0.71$ 0.77$
100 - 178 0.69$ 0.75$
Quantity U.P
1 - 9 0.84$ 0.91$
10 - 24 0.79$ 0.85$
25 - 49 0.75$ 0.81$
50 - 99 0.71$ 0.77$
100 - 178 0.69$ 0.75$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 178
Set of 1

NPN transistor, 20mA, TO-92, TO-92, 30 v - KTC9018. NPN transistor, 20mA, TO-92, TO-92, 30 v. Collector current: 20mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 30 v. Cost): 3.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 800 MHz. Function: FM-V/M/O. Max hFE gain: 198. Minimum hFE gain: 40. Marking on the case: 15.8k Ohms. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: NPN. Vcbo: 40V. Vebo: 4 v. BE diode: no. CE diode: no. Quantity in stock updated on 28/04/2025, 21:25.

Equivalent products :

Quantity in stock : 17443
BC546B

BC546B

NPN transistor, TO-92, 0.1A, TO-92, 65V. Housing: TO-92. Collector current: 0.1A. Housing (according...
BC546B
NPN transistor, TO-92, 0.1A, TO-92, 65V. Housing: TO-92. Collector current: 0.1A. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 65V. RoHS: yes. Resistor B: yes. BE resistor: PCB soldering. C(in): TO-92. Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 450. Minimum hFE gain: 200. Ic(pulse): 0.2A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.5W. Assembly/installation: PCB through-hole mounting. Technology: 'Planar Epitaxial transistor'. Type of transistor: NPN. Vcbo: 80V. Saturation voltage VCE(sat): 0.09V. Vebo: 6V. Spec info: complementary transistor (pair) BC556B. BE diode: no. CE diode: no
BC546B
NPN transistor, TO-92, 0.1A, TO-92, 65V. Housing: TO-92. Collector current: 0.1A. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 65V. RoHS: yes. Resistor B: yes. BE resistor: PCB soldering. C(in): TO-92. Cost): 6pF. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 450. Minimum hFE gain: 200. Ic(pulse): 0.2A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.5W. Assembly/installation: PCB through-hole mounting. Technology: 'Planar Epitaxial transistor'. Type of transistor: NPN. Vcbo: 80V. Saturation voltage VCE(sat): 0.09V. Vebo: 6V. Spec info: complementary transistor (pair) BC556B. BE diode: no. CE diode: no
Set of 1
0.10$ VAT incl.
(0.09$ excl. VAT)
0.10$
Quantity in stock : 7541
2N3904

2N3904

NPN transistor, 100mA, TO-92, TO-92, 40V. Collector current: 100mA. Housing: TO-92. Housing (accordi...
2N3904
NPN transistor, 100mA, TO-92, TO-92, 40V. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 40V. C(in): 8pF. Cost): 4pF. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: Switching Transistor. Max hFE gain: 300. Minimum hFE gain: 100. Ic(pulse): 200mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Die Construction'. Tf(max): 75 ns. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.25V. Vebo: 5V. Spec info: hFE 100-300 (IC=10mAdc, VCE=1.0Vdc). BE diode: no. CE diode: no. Resistor B: yes. BE resistor: PCB soldering
2N3904
NPN transistor, 100mA, TO-92, TO-92, 40V. Collector current: 100mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 40V. C(in): 8pF. Cost): 4pF. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: Switching Transistor. Max hFE gain: 300. Minimum hFE gain: 100. Ic(pulse): 200mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Die Construction'. Tf(max): 75 ns. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.25V. Vebo: 5V. Spec info: hFE 100-300 (IC=10mAdc, VCE=1.0Vdc). BE diode: no. CE diode: no. Resistor B: yes. BE resistor: PCB soldering
Set of 10
0.84$ VAT incl.
(0.78$ excl. VAT)
0.84$
Quantity in stock : 42
BC550B

BC550B

NPN transistor, 0.1A, TO-92, TO-92, 45V. Collector current: 0.1A. Housing: TO-92. Housing (according...
BC550B
NPN transistor, 0.1A, TO-92, TO-92, 45V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. Cost): 2.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: general purpose. Max hFE gain: 450. Minimum hFE gain: 200. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.25V. Maximum saturation voltage VCE(sat): 0.6V. Vebo: 5V. Spec info: complementary transistor (pair) BC560B. BE diode: no. CE diode: no
BC550B
NPN transistor, 0.1A, TO-92, TO-92, 45V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. Cost): 2.5pF. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: general purpose. Max hFE gain: 450. Minimum hFE gain: 200. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: NPN. Operating temperature: -55...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.25V. Maximum saturation voltage VCE(sat): 0.6V. Vebo: 5V. Spec info: complementary transistor (pair) BC560B. BE diode: no. CE diode: no
Set of 10
2.00$ VAT incl.
(1.85$ excl. VAT)
2.00$

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