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Semiconductors Transistors FET and MOSFET transistors

P-channel transistor, 12A, 1mA, TO-264 ( TOP-3L ), 2-21F1B, 200V - 2SJ201

P-channel transistor, 12A, 1mA, TO-264 ( TOP-3L ), 2-21F1B, 200V - 2SJ201
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Quantity excl. VAT VAT incl.
1 - 1 18.47$ 19.97$
2 - 2 17.55$ 18.97$
3 - 4 17.18$ 18.57$
5 - 9 16.63$ 17.98$
10 - 14 16.26$ 17.58$
15 - 19 15.70$ 16.97$
20+ 15.15$ 16.38$
Quantity U.P
1 - 1 18.47$ 19.97$
2 - 2 17.55$ 18.97$
3 - 4 17.18$ 18.57$
5 - 9 16.63$ 17.98$
10 - 14 16.26$ 17.58$
15 - 19 15.70$ 16.97$
20+ 15.15$ 16.38$
Delivery in 2-3 days, with postal tracking!
Out of stock
Set of 1

P-channel transistor, 12A, 1mA, TO-264 ( TOP-3L ), 2-21F1B, 200V - 2SJ201. P-channel transistor, 12A, 1mA, TO-264 ( TOP-3L ), 2-21F1B, 200V. ID (T=25°C): 12A. Idss (max): 1mA. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): 2-21F1B. Voltage Vds(max): 200V. C(in): 1500pF. Cost): 430pF. Channel type: P. Drain-source protection : no. Quantity per case: 1. Type of transistor: MOSFET. Function: High Power Amplifier Application. G-S Protection: no. Marking on the case: J201. Number of terminals: 3. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: Field Effect Silicon P-Channel MOS Type. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Gate/source voltage (off) max.: 2.8V. Gate/source voltage (off) min.: 0.8V. Original product from manufacturer Toshiba. Quantity in stock updated on 15/06/2025, 09:25.

Technical documentation

Equivalent products :

Out of stock
ECW20P20

ECW20P20

P-channel transistor, 16A, 10mA, TO-264 ( TOP-3L ), TO-264, 200V. ID (T=25°C): 16A. Idss (max): 10m...
ECW20P20
P-channel transistor, 16A, 10mA, TO-264 ( TOP-3L ), TO-264, 200V. ID (T=25°C): 16A. Idss (max): 10mA. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Voltage Vds(max): 200V. Pinout: 1 - G, 2 - S, 3 - D. C(in): 1850pF. Cost): 850pF. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Various: HI-FI Power Amplifier. Type of transistor: MOSFET. Function: AUDIO POWER Amplifier MOSFET. G-S Protection: no. Number of terminals: 3. Pd (Power Dissipation, Max): 250W. RoHS: yes. Spec info: complementary transistor (pair) ECW20N20. Assembly/installation: PCB through-hole mounting. Td(off): 105 ns. Td(on): 150 ns. Technology: P-Channel MOSFET Power Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 14V. Gate/source voltage (off) max.: 1.5V. Gate/source voltage (off) min.: 0.1V
ECW20P20
P-channel transistor, 16A, 10mA, TO-264 ( TOP-3L ), TO-264, 200V. ID (T=25°C): 16A. Idss (max): 10mA. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Voltage Vds(max): 200V. Pinout: 1 - G, 2 - S, 3 - D. C(in): 1850pF. Cost): 850pF. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Various: HI-FI Power Amplifier. Type of transistor: MOSFET. Function: AUDIO POWER Amplifier MOSFET. G-S Protection: no. Number of terminals: 3. Pd (Power Dissipation, Max): 250W. RoHS: yes. Spec info: complementary transistor (pair) ECW20N20. Assembly/installation: PCB through-hole mounting. Td(off): 105 ns. Td(on): 150 ns. Technology: P-Channel MOSFET Power Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 14V. Gate/source voltage (off) max.: 1.5V. Gate/source voltage (off) min.: 0.1V
Set of 1
32.19$ VAT incl.
(29.78$ excl. VAT)
32.19$

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