P-channel transistor, 12.5A, 5uA, SO, SO-8, 30 v - AO4427

Quantity	excl. VAT	VAT incl.
1 - 4	1.36$	1.47$
5 - 9	1.29$	1.39$
10 - 24	1.23$	1.33$
25 - 49	1.16$	1.25$
50 - 99	1.13$	1.22$
100 - 249	1.10$	1.19$
250 - 341	1.05$	1.14$

Quantity	U.P
1 - 4	1.36$	1.47$
5 - 9	1.29$	1.39$
10 - 24	1.23$	1.33$
25 - 49	1.16$	1.25$
50 - 99	1.13$	1.22$
100 - 249	1.10$	1.19$
250 - 341	1.05$	1.14$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 341

Set of 1

P-channel transistor, 12.5A, 5uA, SO, SO-8, 30 v - AO4427. P-channel transistor, 12.5A, 5uA, SO, SO-8, 30 v. ID (T=25°C): 12.5A. Idss (max): 5uA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. C(in): 2330pF. Cost): 480pF. Channel type: P. Drain-source protection : diode. Trr Diode (Min.): 28 ns. Type of transistor: FET. Function: Switching or PWM applications. Id(imp): 60A. ID (T=100°C): 10.5A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 3W. On-resistance Rds On: 0.0094 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 49.5 ns. Td(on): 12.8 ns. Technology: 'Enhancement Mode Field Effect Transistor'. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 25V. Vgs(th) max.: 3V. Vgs(th) min.: 1.7V. Quantity per case: 1. G-S Protection: yes. Quantity in stock updated on 27/04/2025, 17:25.

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