P-channel transistor, 10A, 250uA, TO-220, 60V - AP9575GP
| Quantity | excl. VAT | VAT incl. |
|---|---|---|
| 1 - 1 | 13.17$ | 14.24$ |
| 2 - 2 | 12.51$ | 13.52$ |
| 3 - 4 | 12.25$ | 13.24$ |
| 5 - 9 | 11.85$ | 12.81$ |
| 10 - 19 | 11.59$ | 12.53$ |
| 20 - 29 | 11.20$ | 12.11$ |
| 30+ | 10.80$ | 11.67$ |
| Quantity | U.P | |
|---|---|---|
| 1 - 1 | 13.17$ | 14.24$ |
| 2 - 2 | 12.51$ | 13.52$ |
| 3 - 4 | 12.25$ | 13.24$ |
| 5 - 9 | 11.85$ | 12.81$ |
| 10 - 19 | 11.59$ | 12.53$ |
| 20 - 29 | 11.20$ | 12.11$ |
| 30+ | 10.80$ | 11.67$ |
P-channel transistor, 10A, 250uA, TO-220, 60V - AP9575GP. P-channel transistor, 10A, 250uA, TO-220, 60V. ID (T=25°C): 10A. Idss (max): 250uA. Housing: TO-220. Voltage Vds(max): 60V. Channel type: P. Drain-source protection : diode. Quantity per case: 1. Type of transistor: MOSFET. G-S Protection: no. Id(imp): 60A. ID (T=100°C): 16A. IDss (min): 10uA. Number of terminals: 3. Pd (Power Dissipation, Max): 31.3W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 45 ns. Td(on): 12 ns. Technology: 'Enhancement Mode Power MOSFET'. Operating temperature: -55°C...+150°C. Gate/source voltage Vgs: 25V. Quantity in stock updated on 15/06/2025, 09:25.
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