P-channel transistor BSS84, SOT-23 ( TO-236 ), 130mA, 46.4k Ohms, SOT-23 ( TO236 ), 50V. Housing: SOT-23 ( TO-236 ). ID (T=25°C): 130mA. Idss (max): 46.4k Ohms. Housing (according to data sheet): SOT-23 ( TO236 ). Voltage Vds(max): 50V. Assembly/installation: surface-mounted component (SMD). Average continuous current: -130mA. C(in): 25pF. Channel type: P. Cost): 15pF. Drain current: -130mA. Drain-source protection: diode. Drain-source voltage: -50V. Function: Direct interface to C-MOS, TTL, etc. G-S Protection: no. Gate-source voltage: ±20V. Gate/source voltage Vgs: 20V. ID (T=100°C): 75mA. IDss (min): 10uA. Id(imp): 520mA. Marking on the case: 11W. Number of terminals: 3. On-resistance Rds On: 6 Ohms. On-state resistance: 10 Ohms. Operating temperature: -65...+150°C. Pd (Power Dissipation, Max): 0.25W. Polarity: unipolar. Power: 0.25W. Quantity per case: 1. RoHS: yes. Spec info: screen printing/SMD code 11W. Td(off): 7 ns. Td(on): 3 ns. Technology: 'Enhancement mode vertical D-MOS transistor'. Type of transistor: MOSFET. Vgs(th) min.: 0.8V. Original product from manufacturer: Nxp Semiconductors. Minimum quantity: 10. Quantity in stock updated on 13/11/2025, 13:31