P-channel transistor, 1.5A, 10uA, SOT-23 ( TO-236 ), SOT-23, 30 v - FDN358P

Quantity	excl. VAT	VAT incl.
1 - 4	0.90$	0.97$
5 - 9	0.86$	0.93$
10 - 24	0.81$	0.88$
25 - 49	0.77$	0.83$
50 - 99	0.75$	0.81$
100 - 249	0.78$	0.84$
250 - 1190	0.71$	0.77$

Quantity	U.P
1 - 4	0.90$	0.97$
5 - 9	0.86$	0.93$
10 - 24	0.81$	0.88$
25 - 49	0.77$	0.83$
50 - 99	0.75$	0.81$
100 - 249	0.78$	0.84$
250 - 1190	0.71$	0.77$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 1190

Set of 1

P-channel transistor, 1.5A, 10uA, SOT-23 ( TO-236 ), SOT-23, 30 v - FDN358P. P-channel transistor, 1.5A, 10uA, SOT-23 ( TO-236 ), SOT-23, 30 v. ID (T=25°C): 1.5A. Idss: 10uA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Voltage Vds(max): 30 v. C(in): 182pF. Cost): 56pF. Channel type: P. Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Type of transistor: MOSFET. Function: Single P-Channel, Logic Level. Id(imp): 5A. IDss (min): 1uA. Marking on the case: 358. Pd (Power Dissipation, Max): 0.5W. On-resistance Rds On: 0.105 Ohms. Assembly/installation: surface-mounted component (SMD). Technology: PowerTrench MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 3V. Vgs(th) min.: 1V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 28/04/2025, 01:25.

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