Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 2.36$ | 2.55$ |
5 - 9 | 2.24$ | 2.42$ |
10 - 24 | 2.13$ | 2.30$ |
25 - 49 | 2.01$ | 2.17$ |
50 - 98 | 1.96$ | 2.12$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 2.36$ | 2.55$ |
5 - 9 | 2.24$ | 2.42$ |
10 - 24 | 2.13$ | 2.30$ |
25 - 49 | 2.01$ | 2.17$ |
50 - 98 | 1.96$ | 2.12$ |
P-channel transistor, 27A, 10uA, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 60V - FQB27P06TM. P-channel transistor, 27A, 10uA, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 60V. ID (T=25°C): 27A. Idss (max): 10uA. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 60V. C(in): 1100pF. Cost): 510pF. Channel type: P. Drain-source protection : diode. Trr Diode (Min.): 105 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 102A. ID (T=100°C): 19.1A. IDss (min): 1uA. Pd (Power Dissipation, Max): 120W. On-resistance Rds On: 0.055 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 30 ns. Td(on): 18 ns. Technology: DMOS, QFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 25V. Vgs(th) min.: 2V. Number of terminals: 2. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 28/04/2025, 01:25.
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