Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 4.03$ | 4.36$ |
5 - 9 | 3.83$ | 4.14$ |
10 - 24 | 3.63$ | 3.92$ |
25 - 49 | 3.43$ | 3.71$ |
50 - 99 | 3.35$ | 3.62$ |
100 - 110 | 3.07$ | 3.32$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 4.03$ | 4.36$ |
5 - 9 | 3.83$ | 4.14$ |
10 - 24 | 3.63$ | 3.92$ |
25 - 49 | 3.43$ | 3.71$ |
50 - 99 | 3.35$ | 3.62$ |
100 - 110 | 3.07$ | 3.32$ |
P-channel transistor, 40A, 250uA, TO-220, TO-220AB, 100V - IRF5210. P-channel transistor, 40A, 250uA, TO-220, TO-220AB, 100V. ID (T=25°C): 40A. Idss (max): 250uA. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 100V. C(in): 2700pF. Cost): 790pF. Channel type: P. Conditioning: plastic tube. Conditioning unit: 50. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 170 ns. Type of transistor: MOSFET. Function: High-speed switching. Id(imp): 140A. ID (T=100°C): 29A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. On-resistance Rds On: 0.06 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 79 ns. Td(on): 17 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. G-S Protection: no. Quantity in stock updated on 28/04/2025, 01:25.
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