P-channel transistor IRF7204, SO8
Quantity
Unit price
1-4
1.86$
5-9
1.16$
10-19
0.97$
20-49
0.87$
50+
0.79$
| Quantity in stock: 15 |
P-channel transistor IRF7204, SO8. Housing: SO8. Assembly/installation: SMD. Charge: 25nC. Drain current: -5.3A. Drain-source voltage: -20V. Gate-source voltage: 12V, ±12V. Polarity: unipolar. Power: 2.5W. RoHS: yes. Technology: HEXFET®. Thermal resistance: 50K/W. Type of transistor: P-MOSFET, HEXFET. Original product from manufacturer: Infineon (irf). Quantity in stock updated on 01/01/2026, 21:12
IRF7204
13 parameters
Housing
SO8
Assembly/installation
SMD
Charge
25nC
Drain current
-5.3A
Drain-source voltage
-20V
Gate-source voltage
12V, ±12V
Polarity
unipolar
Power
2.5W
RoHS
yes
Technology
HEXFET®
Thermal resistance
50K/W
Type of transistor
P-MOSFET, HEXFET
Original product from manufacturer
Infineon (irf)