P-channel transistor, 12A, 250uA, TO-220, TO-220AB, 55V - IRF9Z24NPBF
| Quantity | excl. VAT | VAT incl. |
|---|---|---|
| 1 - 4 | 1.61$ | 1.74$ |
| 5 - 9 | 1.53$ | 1.65$ |
| 10 - 24 | 1.49$ | 1.61$ |
| 25 - 49 | 1.45$ | 1.57$ |
| 50 - 99 | 1.42$ | 1.54$ |
| 100 - 109 | 1.26$ | 1.36$ |
| Quantity | U.P | |
|---|---|---|
| 1 - 4 | 1.61$ | 1.74$ |
| 5 - 9 | 1.53$ | 1.65$ |
| 10 - 24 | 1.49$ | 1.61$ |
| 25 - 49 | 1.45$ | 1.57$ |
| 50 - 99 | 1.42$ | 1.54$ |
| 100 - 109 | 1.26$ | 1.36$ |
P-channel transistor, 12A, 250uA, TO-220, TO-220AB, 55V - IRF9Z24NPBF. P-channel transistor, 12A, 250uA, TO-220, TO-220AB, 55V. ID (T=25°C): 12A. Idss (max): 250uA. Housing: TO-220. Housing (according to data sheet): TO-220AB. Voltage Vds(max): 55V. C(in): 350pF. Cost): 170pF. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 47 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 48A. ID (T=100°C): 8.5A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 45W. On-resistance Rds On: 0.175 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 23 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer Infineon Technologies. Quantity in stock updated on 16/06/2025, 04:25.
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