P-channel transistor, 19A, 250uA, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 55V - IRF9Z34NS

Quantity	excl. VAT	VAT incl.
1 - 4	2.07$	2.24$
5 - 9	1.97$	2.13$
10 - 24	1.87$	2.02$
25 - 49	1.76$	1.90$
50 - 99	1.72$	1.86$
100 - 249	1.53$	1.65$
250 - 645	1.45$	1.57$

Quantity	U.P
1 - 4	2.07$	2.24$
5 - 9	1.97$	2.13$
10 - 24	1.87$	2.02$
25 - 49	1.76$	1.90$
50 - 99	1.72$	1.86$
100 - 249	1.53$	1.65$
250 - 645	1.45$	1.57$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 645

Set of 1

P-channel transistor, 19A, 250uA, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 55V - IRF9Z34NS. P-channel transistor, 19A, 250uA, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 55V. ID (T=25°C): 19A. Idss (max): 250uA. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 55V. C(in): 620pF. Cost): 280pF. Channel type: P. Trr Diode (Min.): 54ms. Type of transistor: MOSFET. Function: P-channel MOSFET transistor. Id(imp): 68A. ID (T=100°C): 14A. IDss (min): 25uA. Pd (Power Dissipation, Max): 68W. On-resistance Rds On: 0.10 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 30 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Number of terminals: 3. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 28/04/2025, 14:25.

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