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P-channel transistor, 19A, 250uA, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 55V - IRF9Z34NS

P-channel transistor, 19A, 250uA, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 55V - IRF9Z34NS
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Quantity excl. VAT VAT incl.
1 - 4 2.07$ 2.24$
5 - 9 1.97$ 2.13$
10 - 24 1.91$ 2.06$
25 - 49 1.87$ 2.02$
50 - 99 1.82$ 1.97$
100 - 249 1.60$ 1.73$
250 - 644 1.55$ 1.68$
Quantity U.P
1 - 4 2.07$ 2.24$
5 - 9 1.97$ 2.13$
10 - 24 1.91$ 2.06$
25 - 49 1.87$ 2.02$
50 - 99 1.82$ 1.97$
100 - 249 1.60$ 1.73$
250 - 644 1.55$ 1.68$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 644
Set of 1

P-channel transistor, 19A, 250uA, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 55V - IRF9Z34NS. P-channel transistor, 19A, 250uA, D2PAK ( TO-263 ), D2PAK ( TO-263 ), 55V. ID (T=25°C): 19A. Idss (max): 250uA. Housing: D2PAK ( TO-263 ). Housing (according to data sheet): D2PAK ( TO-263 ). Voltage Vds(max): 55V. C(in): 620pF. Cost): 280pF. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 54ms. Type of transistor: MOSFET. Function: P-channel MOSFET transistor. G-S Protection: no. Id(imp): 68A. ID (T=100°C): 14A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 68W. On-resistance Rds On: 0.10 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 30 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer International Rectifier. Quantity in stock updated on 16/06/2025, 10:25.

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