P-channel transistor, 1.8A, 500uA, DIP, DH-1 house, DIP-4, 60V - IRFD9024

Quantity	excl. VAT	VAT incl.
1 - 4	1.71$	1.85$
5 - 9	1.63$	1.76$
10 - 24	1.54$	1.66$
25 - 49	1.45$	1.57$
50 - 99	1.42$	1.54$
100 - 198	1.39$	1.50$

Quantity	U.P
1 - 4	1.71$	1.85$
5 - 9	1.63$	1.76$
10 - 24	1.54$	1.66$
25 - 49	1.45$	1.57$
50 - 99	1.42$	1.54$
100 - 198	1.39$	1.50$

Delivery in 2-3 days, with postal tracking!

Quantity in stock : 198

Set of 1

P-channel transistor, 1.8A, 500uA, DIP, DH-1 house, DIP-4, 60V - IRFD9024. P-channel transistor, 1.8A, 500uA, DIP, DH-1 house, DIP-4, 60V. ID (T=25°C): 1.8A. Idss (max): 500uA. Housing: DIP. Housing (according to data sheet): DH-1 house, DIP-4. Voltage Vds(max): 60V. C(in): 570pF. Cost): 360pF. Channel type: P. Conditioning: plastic tube. Conditioning unit: 100dB. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 100 ns. Type of transistor: FET. Function: High-speed switching. Id(imp): 13A. ID (T=100°C): 1.1A. IDss (min): 100uA. Number of terminals: 4. Pd (Power Dissipation, Max): 1.3W. On-resistance Rds On: 0.28 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 15 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 2V. Spec info: Dynamic dv/dt Rating. G-S Protection: no. Quantity in stock updated on 28/04/2025, 11:25.

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