Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.74$ | 1.88$ |
5 - 9 | 1.65$ | 1.78$ |
10 - 24 | 1.56$ | 1.69$ |
25 - 49 | 1.48$ | 1.60$ |
50 - 99 | 1.44$ | 1.56$ |
100 - 249 | 1.41$ | 1.52$ |
250+ | 1.34$ | 1.45$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.74$ | 1.88$ |
5 - 9 | 1.65$ | 1.78$ |
10 - 24 | 1.56$ | 1.69$ |
25 - 49 | 1.48$ | 1.60$ |
50 - 99 | 1.44$ | 1.56$ |
100 - 249 | 1.41$ | 1.52$ |
250+ | 1.34$ | 1.45$ |
P-channel transistor, 0.1A, 0.1A, DIP, DH-1 house, DIP-4, 100V - IRFD9120. P-channel transistor, 0.1A, 0.1A, DIP, DH-1 house, DIP-4, 100V. ID (T=25°C): 0.1A. Idss (max): 0.1A. Housing: DIP. Housing (according to data sheet): DH-1 house, DIP-4. Voltage Vds(max): 100V. Channel type: P. Quantity per case: 1. Type of transistor: FET. Function: P-channel MOSFET transistor. ID (T=100°C): 0.6A. Number of terminals: 4. Pd (Power Dissipation, Max): 1.3W. On-resistance Rds On: 0.6 Ohms. Assembly/installation: PCB through-hole mounting. Technology: HEXFET Power MOSFET. Quantity in stock updated on 28/04/2025, 14:25.
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