P-channel transistor IRFR5305PBF, TO252AA, DPAK
Quantity
Unit price
1-4
2.70$
5-9
1.69$
10-19
1.48$
20-49
1.37$
50+
1.29$
| Quantity in stock: 15 |
P-channel transistor IRFR5305PBF, TO252AA, DPAK. Housing: TO252AA, DPAK. Assembly/installation: SMD. Charge: 42nC. Drain current: -31A. Drain-source voltage: -55V. Gate-source voltage: 20V, ±20V. Housing thermal resistance: 1.4K/W. Polarity: unipolar. Power: 89W. RoHS: yes. Technology: HEXFET®. Type of transistor: P-MOSFET, HEXFET. Original product from manufacturer: International Rectifier. Quantity in stock updated on 12/11/2025, 23:15
IRFR5305PBF
13 parameters
Housing
TO252AA, DPAK
Assembly/installation
SMD
Charge
42nC
Drain current
-31A
Drain-source voltage
-55V
Gate-source voltage
20V, ±20V
Housing thermal resistance
1.4K/W
Polarity
unipolar
Power
89W
RoHS
yes
Technology
HEXFET®
Type of transistor
P-MOSFET, HEXFET
Original product from manufacturer
International Rectifier