Electronic components and equipment, for businesses and individuals

P-channel transistor, 11A, 250uA, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 55V - IRFR9024N

P-channel transistor, 11A, 250uA, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 55V - IRFR9024N
[TITLE]
[TITLE]
[TITLE]
[TITLE]
Quantity excl. VAT VAT incl.
1 - 4 1.58$ 1.71$
5 - 9 1.50$ 1.62$
10 - 24 1.45$ 1.57$
25 - 49 1.42$ 1.54$
50 - 99 1.39$ 1.50$
100 - 213 1.23$ 1.33$
Quantity U.P
1 - 4 1.58$ 1.71$
5 - 9 1.50$ 1.62$
10 - 24 1.45$ 1.57$
25 - 49 1.42$ 1.54$
50 - 99 1.39$ 1.50$
100 - 213 1.23$ 1.33$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 213
Set of 1

P-channel transistor, 11A, 250uA, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 55V - IRFR9024N. P-channel transistor, 11A, 250uA, D-PAK ( TO-252 ), TO-252AA ( DPAK ) ( SOT428 ), 55V. ID (T=25°C): 11A. Idss (max): 250uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252AA ( DPAK ) ( SOT428 ). Voltage Vds(max): 55V. C(in): 350pF. Cost): 170pF. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 47 ns. Type of transistor: MOSFET. Function: High-speed switching. G-S Protection: no. Id(imp): 44A. ID (T=100°C): 8A. IDss (min): 25uA. Number of terminals: 3. Pd (Power Dissipation, Max): 38W. On-resistance Rds On: 0.175 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 23 ns. Td(on): 13 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2V. Original product from manufacturer Infineon (irf). Quantity in stock updated on 01/08/2025, 10:25.

Equivalent products :

We also recommend :

We also recommend :

Information and technical help

By phone :

Payment and delivery

Delivery in 2-3 days, with postal tracking!

Subscribe to the newsletter

I agree to receive emails, and I understand that I can unsubscribe at any time after subscribing.

All rights reserved, RPtronics, 2024.