P-channel transistor IRFR9024PBF, TO252AA, TO-252, -60V

P-channel transistor IRFR9024PBF, TO252AA, TO-252, -60V

Quantity
Unit price
1-74
2.40$
75+
1.44$
Quantity in stock: 33

P-channel transistor IRFR9024PBF, TO252AA, TO-252, -60V. Housing: TO252AA. Housing (JEDEC standard): TO-252. Drain-source voltage Uds [V]: -60V. Ciss Gate Capacitance [pF]: 570pF. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Drain current Id (A) @ 25°C: -8.8A. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.28 Ohms @ -5.3A. Drive Voltage: 10V. Features: -. Gate breakdown voltage Ugs [V]: -4V. Gate/source voltage Vgs max: -20V. Id @ Tc=25°C (Continuous Drain Current): 8.8A. Information: -. MSL: -. Manufacturer's marking: IRFR9024PBF. Max temperature: +150°C.. Maximum dissipation Ptot [W]: 2.5W. Mounting Type: THT. Number of terminals: 3. Pd (Power Dissipation, Max): 42W. Polarity: MOSFET P. RoHS: yes. Series: IRFR. Switch-off delay tf[nsec.]: 15 ns. Switch-on time ton [nsec.]: 13 ns. Vdss (Drain to Source Voltage): -60V. Original product from manufacturer: Vishay (ir). Quantity in stock updated on 13/11/2025, 16:45

Technical documentation (PDF)
IRFR9024PBF
25 parameters
Housing
TO252AA
Housing (JEDEC standard)
TO-252
Drain-source voltage Uds [V]
-60V
Ciss Gate Capacitance [pF]
570pF
Component family
MOSFET, P-MOS
Configuration
surface-mounted component (SMD)
Drain current Id (A) @ 25°C
-8.8A
Drain current through resistor Rds [Ohm] @ Ids [A]
0.28 Ohms @ -5.3A
Drive Voltage
10V
Gate breakdown voltage Ugs [V]
-4V
Gate/source voltage Vgs max
-20V
Id @ Tc=25°C (Continuous Drain Current)
8.8A
Manufacturer's marking
IRFR9024PBF
Max temperature
+150°C.
Maximum dissipation Ptot [W]
2.5W
Mounting Type
THT
Number of terminals
3
Pd (Power Dissipation, Max)
42W
Polarity
MOSFET P
RoHS
yes
Series
IRFR
Switch-off delay tf[nsec.]
15 ns
Switch-on time ton [nsec.]
13 ns
Vdss (Drain to Source Voltage)
-60V
Original product from manufacturer
Vishay (ir)