Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.50$ | 0.54$ |
10 - 24 | 0.48$ | 0.52$ |
25 - 49 | 0.45$ | 0.49$ |
50 - 99 | 0.43$ | 0.46$ |
100 - 249 | 0.42$ | 0.45$ |
250 - 263 | 0.41$ | 0.44$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.50$ | 0.54$ |
10 - 24 | 0.48$ | 0.52$ |
25 - 49 | 0.45$ | 0.49$ |
50 - 99 | 0.43$ | 0.46$ |
100 - 249 | 0.42$ | 0.45$ |
250 - 263 | 0.41$ | 0.44$ |
P-channel transistor, 3A, 5uA, SOT-23 ( TO-236 ), SOT-23 ( TO-236AB ) ( Micro3 ), 30 v - IRLML5203. P-channel transistor, 3A, 5uA, SOT-23 ( TO-236 ), SOT-23 ( TO-236AB ) ( Micro3 ), 30 v. ID (T=25°C): 3A. Idss (max): 5uA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO-236AB ) ( Micro3 ). Voltage Vds(max): 30 v. C(in): 510pF. Cost): 71pF. Channel type: P. Drain-source protection : Zener diode. Quantity per case: 1. Trr Diode (Min.): 17 ns. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. Id(imp): 24A. ID (T=100°C): 2.4A. IDss (min): 1uA. Note: screen printing/SMD code H. Marking on the case: H. Number of terminals: 3. Pd (Power Dissipation, Max): 1.25W. On-resistance Rds On: 0.098 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 52 ns. Td(on): 18 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2.5V. Vgs(th) min.: 1V. G-S Protection: no. Quantity in stock updated on 28/04/2025, 14:25.
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