Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.53$ | 0.57$ |
10 - 24 | 0.50$ | 0.54$ |
25 - 49 | 0.48$ | 0.52$ |
50 - 99 | 0.45$ | 0.49$ |
100 - 249 | 0.44$ | 0.48$ |
250 - 309 | 0.38$ | 0.41$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.53$ | 0.57$ |
10 - 24 | 0.50$ | 0.54$ |
25 - 49 | 0.48$ | 0.52$ |
50 - 99 | 0.45$ | 0.49$ |
100 - 249 | 0.44$ | 0.48$ |
250 - 309 | 0.38$ | 0.41$ |
P-channel transistor, 3.7A, 25uA, SOT-23 ( TO-236 ), SOT-23 ( TO-236AB ) ( Micro3 ), 20V - IRLML6402. P-channel transistor, 3.7A, 25uA, SOT-23 ( TO-236 ), SOT-23 ( TO-236AB ) ( Micro3 ), 20V. ID (T=25°C): 3.7A. Idss (max): 25uA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO-236AB ) ( Micro3 ). Voltage Vds(max): 20V. C(in): 633pF. Cost): 145pF. Channel type: P. Quantity per case: 1. Type of transistor: MOSFET. Function: Ultra Low On-Resistance. Id(imp): 22A. ID (T=100°C): 2.2A. IDss (min): 1uA. Number of terminals: 3. Pd (Power Dissipation, Max): 1.3W. On-resistance Rds On: 0.05 Ohms. Assembly/installation: surface-mounted component (SMD). Td(off): 588 ns. Td(on): 350 ns. Technology: HEXFET Power MOSFET. Operating temperature: -55...+150°C. Vgs(th) max.: 1.2V. Vgs(th) min.: 0.4V. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 28/04/2025, 14:25.
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