Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 3.24$ | 3.50$ |
5 - 9 | 3.08$ | 3.33$ |
10 - 24 | 2.91$ | 3.15$ |
25 - 49 | 2.75$ | 2.97$ |
50 - 99 | 2.69$ | 2.91$ |
100 - 249 | 2.62$ | 2.83$ |
250 - 751 | 2.49$ | 2.69$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 3.24$ | 3.50$ |
5 - 9 | 3.08$ | 3.33$ |
10 - 24 | 2.91$ | 3.15$ |
25 - 49 | 2.75$ | 2.97$ |
50 - 99 | 2.69$ | 2.91$ |
100 - 249 | 2.62$ | 2.83$ |
250 - 751 | 2.49$ | 2.69$ |
P-channel transistor, 8A, 10uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 40V - P5504ED. P-channel transistor, 8A, 10uA, D-PAK ( TO-252 ), TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ), 40V. ID (T=25°C): 8A. Idss (max): 10uA. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( DPAK ) ( SOT428 ) ( DPAK-5 ). Voltage Vds(max): 40V. C(in): 690pF. Cost): 310pF. Channel type: P. Drain-source protection : diode. Trr Diode (Min.): 15.5 ns. Type of transistor: MOSFET. Function: Logic Level Enhancement. Id(imp): 32A. ID (T=100°C): 6A. IDss (min): 1uA. Pd (Power Dissipation, Max): 28W. On-resistance Rds On: 0.065 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 19.8 ns. Td(on): 6.7 ns. Technology: Field Effect Transistor. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V. Number of terminals: 2. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 28/04/2025, 09:25.
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