P-channel transistor, PCB soldering (SMD), SOT-23, -40V, -3.1A - SI2319CDS-T1-GE3
| Quantity | excl. VAT | VAT incl. |
|---|---|---|
| 1 - 4 | 1.18$ | 1.28$ |
| 5 - 9 | 1.12$ | 1.21$ |
| 10 - 24 | 1.06$ | 1.15$ |
| 25 - 49 | 1.00$ | 1.08$ |
| 50 - 99 | 0.98$ | 1.06$ |
| 100 - 249 | 0.77$ | 0.83$ |
| 250 - 2000 | 0.73$ | 0.79$ |
| Quantity | U.P | |
|---|---|---|
| 1 - 4 | 1.18$ | 1.28$ |
| 5 - 9 | 1.12$ | 1.21$ |
| 10 - 24 | 1.06$ | 1.15$ |
| 25 - 49 | 1.00$ | 1.08$ |
| 50 - 99 | 0.98$ | 1.06$ |
| 100 - 249 | 0.77$ | 0.83$ |
| 250 - 2000 | 0.73$ | 0.79$ |
P-channel transistor, PCB soldering (SMD), SOT-23, -40V, -3.1A - SI2319CDS-T1-GE3. P-channel transistor, PCB soldering (SMD), SOT-23, -40V, -3.1A. Housing: PCB soldering (SMD). Housing: SOT-23. Drain-source voltage Uds [V]: -40V. Drain Current Id [A] @ 25°C: -3.1A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: P7. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.077 Ohm @ -4.4A. Gate breakdown voltage Ugs [V]: -2.5V. Switch-on time ton [nsec.]: 60 ns. Switch-off delay tf[nsec.]: 27 ns. Ciss Gate Capacitance [pF]: 595pF. Maximum dissipation Ptot [W]: 0.8W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Quantity in stock updated on 28/04/2025, 09:25.
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