Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.50$ | 0.54$ |
10 - 24 | 0.47$ | 0.51$ |
25 - 49 | 0.45$ | 0.49$ |
50 - 99 | 0.42$ | 0.45$ |
100 - 249 | 0.41$ | 0.44$ |
250 - 499 | 0.40$ | 0.43$ |
500 - 2713 | 0.38$ | 0.41$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.50$ | 0.54$ |
10 - 24 | 0.47$ | 0.51$ |
25 - 49 | 0.45$ | 0.49$ |
50 - 99 | 0.42$ | 0.45$ |
100 - 249 | 0.41$ | 0.44$ |
250 - 499 | 0.40$ | 0.43$ |
500 - 2713 | 0.38$ | 0.41$ |
P-channel transistor, 2.45A, 5nA, TSOP, TSOP-6, 20V - SI3441BD. P-channel transistor, 2.45A, 5nA, TSOP, TSOP-6, 20V. ID (T=25°C): 2.45A. Idss (max): 5nA. Housing: TSOP. Housing (according to data sheet): TSOP-6. Voltage Vds(max): 20V. Channel type: P. Trr Diode (Min.): 50 ns. Type of transistor: MOSFET. Id(imp): 16A. ID (T=100°C): 1.95A. IDss (min): 1nA. Pd (Power Dissipation, Max): 1nA. On-resistance Rds On: 0.07 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 30 ns. Td(on): 15 ns. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 8V. Vgs(th) min.: 0.45V. Number of terminals: 6. Quantity per case: 1. Drain-source protection : yes. G-S Protection: no. Quantity in stock updated on 28/04/2025, 08:25.
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