Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 4 | 1.55$ | 1.68$ |
5 - 9 | 1.48$ | 1.60$ |
10 - 24 | 1.40$ | 1.51$ |
25 - 49 | 1.32$ | 1.43$ |
50 - 99 | 1.29$ | 1.39$ |
100 - 249 | 1.04$ | 1.12$ |
250 - 2301 | 0.99$ | 1.07$ |
Quantity | U.P | |
---|---|---|
1 - 4 | 1.55$ | 1.68$ |
5 - 9 | 1.48$ | 1.60$ |
10 - 24 | 1.40$ | 1.51$ |
25 - 49 | 1.32$ | 1.43$ |
50 - 99 | 1.29$ | 1.39$ |
100 - 249 | 1.04$ | 1.12$ |
250 - 2301 | 0.99$ | 1.07$ |
P-channel transistor, PCB soldering (SMD), SO8, MS-012, -30V, -5.6A - SI4431CDY-T1-GE3. P-channel transistor, PCB soldering (SMD), SO8, MS-012, -30V, -5.6A. Housing: PCB soldering (SMD). Housing: SO8. Housing (JEDEC standard): MS-012. Drain-source voltage Uds [V]: -30V. Drain Current Id [A] @ 25°C: -5.6A. RoHS: yes. Component family: MOSFET, P-MOS. Configuration: surface-mounted component (SMD). Number of terminals: 8. Manufacturer's marking: SI4431CDY-T1-GE3. Drain current through resistor Rds [Ohm] @ Ids [A]: 0.032 Ohms @ -7A. Gate breakdown voltage Ugs [V]: -2.5V. Switch-on time ton [nsec.]: 10 ns. Switch-off delay tf[nsec.]: 23 ns. Ciss Gate Capacitance [pF]: 1006pF. Maximum dissipation Ptot [W]: 1.6W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Quantity in stock updated on 28/04/2025, 09:25.
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