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P-channel transistor, 7A, 5uA, SO, SO-8, 30 v - SI4435BDY

P-channel transistor, 7A, 5uA, SO, SO-8, 30 v - SI4435BDY
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Quantity excl. VAT VAT incl.
1 - 4 1.03$ 1.11$
5 - 9 0.98$ 1.06$
10 - 24 0.93$ 1.01$
25 - 49 0.88$ 0.95$
50 - 99 0.86$ 0.93$
100 - 249 0.84$ 0.91$
250 - 2093 0.80$ 0.86$
Quantity U.P
1 - 4 1.03$ 1.11$
5 - 9 0.98$ 1.06$
10 - 24 0.93$ 1.01$
25 - 49 0.88$ 0.95$
50 - 99 0.86$ 0.93$
100 - 249 0.84$ 0.91$
250 - 2093 0.80$ 0.86$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 2093
Set of 1

P-channel transistor, 7A, 5uA, SO, SO-8, 30 v - SI4435BDY. P-channel transistor, 7A, 5uA, SO, SO-8, 30 v. ID (T=25°C): 7A. Idss (max): 5uA. Housing: SO. Housing (according to data sheet): SO-8. Voltage Vds(max): 30 v. Channel type: P. Drain-source protection : diode. Trr Diode (Min.): 60 ns. Type of transistor: MOSFET. Id(imp): 50A. ID (T=100°C): 5.6A. IDss (min): 1uA. Number of terminals: 8. Pd (Power Dissipation, Max): 1.5W. On-resistance Rds On: 0.015 Ohms. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 110 ns. Td(on): 10 ns. Technology: TrenchFET ® Power MOSFET (D-S) MOSFET. Operating temperature: -55...+150°C. Gate/source voltage Vgs: 20V. Vgs(th) min.: 1V. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 28/04/2025, 09:25.

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