P-channel transistor, 8.8A, 1uA, TO-220, PG-TO220-3, 60V - SPP08P06P

Quantity	excl. VAT	VAT incl.
1 - 4	3.55$	3.84$
5 - 9	3.38$	3.65$
10 - 24	3.27$	3.53$
25 - 49	3.20$	3.46$
50 - 99	3.13$	3.38$
100 - 249	3.02$	3.26$
250+	2.91$	3.15$

Quantity	U.P
1 - 4	3.55$	3.84$
5 - 9	3.38$	3.65$
10 - 24	3.27$	3.53$
25 - 49	3.20$	3.46$
50 - 99	3.13$	3.38$
100 - 249	3.02$	3.26$
250+	2.91$	3.15$

Delivery in 2-3 days, with postal tracking!

Out of stock

Set of 1

P-channel transistor, 8.8A, 1uA, TO-220, PG-TO220-3, 60V - SPP08P06P. P-channel transistor, 8.8A, 1uA, TO-220, PG-TO220-3, 60V. ID (T=25°C): 8.8A. Idss (max): 1uA. Housing: TO-220. Housing (according to data sheet): PG-TO220-3. Voltage Vds(max): 60V. C(in): 335pF. Cost): 105pF. Channel type: P. Drain-source protection : yes. Quantity per case: 1. Trr Diode (Min.): 60 ns. Type of transistor: MOSFET. Function: Enhancement mode, avalanche rated, dv/dt rated. G-S Protection: no. Id(imp): 32.5A. ID (T=100°C): 6.2A. IDss (min): 0.1uA. Pd (Power Dissipation, Max): 42W. On-resistance Rds On: 0.23 Ohms. RoHS: yes. Assembly/installation: PCB through-hole mounting. Td(off): 48 ns. Td(on): 16 ns. Technology: SIPMOS Power-Transistor. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 4 v. Vgs(th) min.: 2.1V. Original product from manufacturer Infineon Technologies. Quantity in stock updated on 15/06/2025, 18:25.

Technical documentation

P-channel transistor, 8.8A, 1uA, TO-220, PG-TO220-3, 60V - SPP08P06P

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