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Semiconductors Transistors N-channel FETs and MOSFETs

N-channel transistor, 35A, 50A, 25uA, 50A, 15m Ohms, D-PAK ( TO-252 ), TO-252 ( D-PAK ), 20V - P50N03LD

N-channel transistor, 35A, 50A, 25uA, 50A, 15m Ohms, D-PAK ( TO-252 ), TO-252 ( D-PAK ), 20V - P50N03LD
[TITLE]
[TITLE]
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Quantity excl. VAT VAT incl.
1 - 4 2.04$ 2.21$
5 - 9 1.94$ 2.10$
10 - 24 1.84$ 1.99$
25 - 49 1.73$ 1.87$
50 - 99 1.69$ 1.83$
100 - 249 1.55$ 1.68$
250 - 435 1.47$ 1.59$
Quantity U.P
1 - 4 2.04$ 2.21$
5 - 9 1.94$ 2.10$
10 - 24 1.84$ 1.99$
25 - 49 1.73$ 1.87$
50 - 99 1.69$ 1.83$
100 - 249 1.55$ 1.68$
250 - 435 1.47$ 1.59$
Delivery in 2-3 days, with postal tracking!
Quantity in stock : 435
Set of 1

N-channel transistor, 35A, 50A, 25uA, 50A, 15m Ohms, D-PAK ( TO-252 ), TO-252 ( D-PAK ), 20V - P50N03LD. N-channel transistor, 35A, 50A, 25uA, 50A, 15m Ohms, D-PAK ( TO-252 ), TO-252 ( D-PAK ), 20V. ID (T=100°C): 35A. ID (T=25°C): 50A. Idss: 25uA. Idss (max): 50A. On-resistance Rds On: 15m Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): TO-252 ( D-PAK ). Voltage Vds(max): 20V. C(in): 1200pF. Cost): 600pF. Channel type: N. Drain-source protection : diode. Trr Diode (Min.): 70 ns. Type of transistor: MOSFET. Function: Logic Level Enhancement Mode. Id(imp): 150A. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 40 ns. Td(on): 6 ns. Technology: Field Effect Transistor. Number of terminals: 3. Quantity per case: 1. G-S Protection: no. Quantity in stock updated on 28/04/2025, 04:25.

Technical documentation

Equivalent products :

Quantity in stock : 35
IPD50N03S2L-06

IPD50N03S2L-06

N-channel transistor, 50A, 50A, 27uA, 7.6m Ohms, D-PAK ( TO-252 ), PG-TO252-3-11 ( TO252 ) ( DPAK ) ...
IPD50N03S2L-06
N-channel transistor, 50A, 50A, 27uA, 7.6m Ohms, D-PAK ( TO-252 ), PG-TO252-3-11 ( TO252 ) ( DPAK ) ( SOT428 ), 30 v. ID (T=100°C): 50A. ID (T=25°C): 50A. Idss (max): 27uA. On-resistance Rds On: 7.6m Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): PG-TO252-3-11 ( TO252 ) ( DPAK ) ( SOT428 ). Voltage Vds(max): 30 v. C(in): 1900pF. Cost): 760pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 40 ns. Type of transistor: MOSFET. Function: Logic Level, Enhancement mode. Id(imp): 200A. IDss (min): 0.01uA. Marking on the case: PN03L06. Number of terminals: 2. Pd (Power Dissipation, Max): 136W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 40 ns. Td(on): 10 ns. Technology: OptiMOS® Power-Transistor. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2V. Vgs(th) min.: 1.2V. Drain-source protection : yes. G-S Protection: no
IPD50N03S2L-06
N-channel transistor, 50A, 50A, 27uA, 7.6m Ohms, D-PAK ( TO-252 ), PG-TO252-3-11 ( TO252 ) ( DPAK ) ( SOT428 ), 30 v. ID (T=100°C): 50A. ID (T=25°C): 50A. Idss (max): 27uA. On-resistance Rds On: 7.6m Ohms. Housing: D-PAK ( TO-252 ). Housing (according to data sheet): PG-TO252-3-11 ( TO252 ) ( DPAK ) ( SOT428 ). Voltage Vds(max): 30 v. C(in): 1900pF. Cost): 760pF. Channel type: N. Quantity per case: 1. Trr Diode (Min.): 40 ns. Type of transistor: MOSFET. Function: Logic Level, Enhancement mode. Id(imp): 200A. IDss (min): 0.01uA. Marking on the case: PN03L06. Number of terminals: 2. Pd (Power Dissipation, Max): 136W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Td(off): 40 ns. Td(on): 10 ns. Technology: OptiMOS® Power-Transistor. Operating temperature: -55...+175°C. Gate/source voltage Vgs: 20V. Vgs(th) max.: 2V. Vgs(th) min.: 1.2V. Drain-source protection : yes. G-S Protection: no
Set of 1
3.52$ VAT incl.
(3.26$ excl. VAT)
3.52$

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