Quantity | excl. VAT | VAT incl. |
---|---|---|
1 - 9 | 0.86$ | 0.93$ |
10 - 24 | 0.82$ | 0.89$ |
25 - 49 | 0.78$ | 0.84$ |
50 - 99 | 0.73$ | 0.79$ |
100 - 134 | 0.72$ | 0.78$ |
Quantity | U.P | |
---|---|---|
1 - 9 | 0.86$ | 0.93$ |
10 - 24 | 0.82$ | 0.89$ |
25 - 49 | 0.78$ | 0.84$ |
50 - 99 | 0.73$ | 0.79$ |
100 - 134 | 0.72$ | 0.78$ |
P600S. Forward current (AV): 6A. IFSM: 400A. Housing: R-6. Housing (according to data sheet): R-6 ( 8x7.5mm ). VRRM: 1200V. Cj: 40pF. Quantity per case: 1. Dielectric structure: Anode-Cathode. Trr Diode (Min.): 1500 ns. Semiconductor material: silicon. MRI (min): 10uA. Marking on the case: 6A12. Number of terminals: 2. RoHS: yes. Assembly/installation: PCB through-hole mounting. Operating temperature: -50...+175°C. Threshold voltage Vf (max): 1.1V. Forward voltage Vf (min): 1V. Spec info: IFSM--360Ap (t=10ms), 400Ap (t=8.3ms). Quantity in stock updated on 28/04/2025, 16:25.
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