PNP bipolar transistors

NPN-Transistor, 2A, TO-92, TO-92, 40V. Collector current: 2A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 40V. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: Very low saturation VBE(sat) 0.9V. Max hFE gain: 800. Minimum hFE gain: 150. Ic(pulse): 6A. Number of terminals: 3. Pd (Power Dissipation, Max): 1.5W. RoHS: yes. Spec info: complementary transistor (pair) ZTX690. Assembly/installation: PCB through-hole mounting. Tf(max): 600 ns. Tf(min): 35us. Type of transistor: PNP. Operating temperature: -55...+200°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.25V. Vebo: 5V

NPN-Transistor, 2A, TO-92, TO-92, 70V. Collector current: 2A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 70V. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: Very low saturation VBE(sat) 0.95V. Max hFE gain: 800. Minimum hFE gain: 300. Ic(pulse): 4A. Number of terminals: 3. Pd (Power Dissipation, Max): 1.5W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: SILICON PLANAR. Tf(max): 750 ns. Tf(min): 35us. Type of transistor: PNP. Operating temperature: -55...+200°C. Vcbo: 75V. Saturation voltage VCE(sat): 0.45V. Vebo: 5V