PNP bipolar transistors

NPN-Transistor, 0.5A, TO-92, TO-92 ( Ammo Pack ), 300V. Collector current: 0.5A. Housing: TO-92. Housing (according to data sheet): TO-92 ( Ammo Pack ). Collector/emitter voltage Vceo: 300V. BE diode: no. CE diode: no. Conditioning: roll. Conditioning unit: 2000. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: High Voltage Transistor. Max hFE gain: 40. Minimum hFE gain: 25. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Spec info: complementary transistor (pair) MPSA42. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 300V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN-Transistor, 1A, TO-92, TO-92M ( 9mm ), 50V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 50V. BE diode: no. C(in): 60pF. Cost): 6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 40V

NPN-Transistor, 0.5A, TO-92, TO-92M ( 9mm ), 300V. Collector current: 0.5A. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 300V. BE diode: no. Cost): 6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, 15A, TO-3P ( TO-218 SOT-93 ), TO-3P, 250V. Collector current: 15A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 250V. BE diode: no. C(in): 4.5pF. Cost): 10pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Max hFE gain: 150. Minimum hFE gain: 75. Ic(pulse): 30A. Pd (Power Dissipation, Max): 150W. RoHS: yes. Spec info: complementary transistor (pair) NJW0281. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 250V. Saturation voltage VCE(sat): 1V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V

NPN-Transistor, 15A, TO-3P ( TO-218 SOT-93 ), TO-3P, 250V. Collector current: 15A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): TO-3P. Collector/emitter voltage Vceo: 250V. BE diode: no. C(in): 9pF. Cost): 6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 30MHz. Function: audio power amplifier. Max hFE gain: 150. Minimum hFE gain: 75. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: complementary transistor (pair) NJW3281. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V

NPN-Transistor, PCB soldering, TO-3P, 250V, 16A. Housing: PCB soldering. Housing: TO-3P. Collector-emitter voltage Uceo [V]: 250V. Collector current Ic [A], max.: 16A. RoHS: yes. Component family: PNP power transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: NJW21193G. Maximum dissipation Ptot [W]: 200W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 15A, 60V. Collector current: 15A. Collector/emitter voltage Vceo: 60V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 2.5 MHz. Max hFE gain: 70. Minimum hFE gain: 20. Note: hFE 20...70. Note: complementary transistor (pair) NTE219. Temperature: +200°C. Pd (Power Dissipation, Max): 115W. Type of transistor: PNP. Operating temperature: -65...+200°C. Vcbo: 100V. Saturation voltage VCE(sat): 1.1V. Maximum saturation voltage VCE(sat): 3.3V. Vebo: 7V

NPN-Transistor, 5A, SOT-89, SOT89 (SC-62), 60V. Collector current: 5A. Housing: SOT-89. Housing (according to data sheet): SOT89 (SC-62). Collector/emitter voltage Vceo: 60V. BE diode: no. Cost): 85pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 110 MHz. Function: High-Current Switching, low-saturation voltage. Max hFE gain: 300. Minimum hFE gain: 80. Ic(pulse): 15A. Note: PBSS4041NX. Marking on the case: 6g. Pd (Power Dissipation, Max): 0.6W. Spec info: screen printing/SMD code 6G. Assembly/installation: surface-mounted component (SMD). Tf (type): 75 ns. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 60mV. Maximum saturation voltage VCE(sat): 300mV. Vebo: 5V

NPN-Transistor, 600mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 40V. Collector current: 600mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 40V. BE diode: no. Cost): 29pF. CE diode: no. Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: High Speed ​​Switching. Max hFE gain: 300. Minimum hFE gain: 100. Ic(pulse): 800mA. Marking on the case: *T2, P2T, T2T, W2T. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Spec info: screen printing/SMD code P2T, T2T, W2T, complementary transistor (pair) PMBT4401. Assembly/installation: surface-mounted component (SMD). Tf(max): 350 ns. Tf(min): 40 ns. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V

NPN-Transistor, 0.5A, TO-92, TO-92, 60V. Collector current: 0.5A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 60V. BE diode: no. Cost): 75pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: General Purpose Amplifier. Spec info: hFE 80...450. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 45V

NPN-Transistor, 0.5A, TO-92, TO-92, 60V. Collector current: 0.5A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 60V. BE diode: no. Cost): 45pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: General Purpose Amplifier. Spec info: hFE 240...600. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 45V

NPN-Transistor, 0.8A, TO-92, TO-92AMMO, 60V. Collector current: 0.8A. Housing: TO-92. Housing (according to data sheet): TO-92AMMO. Collector/emitter voltage Vceo: 60V. BE diode: no. C(in): 30pF. Cost): 8pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: General Purpose Amplifier. Max hFE gain: 300. Minimum hFE gain: 75. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 30 ns. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V

NPN-Transistor, PCB soldering, TO-92, TO-226, 60V, 800mA. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 800mA. RoHS: no. Component family: PNP transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: 2907A. Cutoff frequency ft [MHz]: 200 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, PCB soldering (SMD), SOT-363, 50V, 100mA. Housing: PCB soldering (SMD). Housing: SOT-363. Collector-emitter voltage Uceo [V]: 50V. Collector current Ic [A], max.: 100mA. RoHS: yes. Component family: dual PNP transistor. Configuration: surface-mounted component (SMD). Number of terminals: 6. Manufacturer's marking: B*1. Cutoff frequency ft [MHz]: 180 MHz. Maximum dissipation Ptot [W]: 0.3W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN-Transistor, PCB soldering (SMD), SOT-23, TO-236, 50V, 100mA. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Collector-emitter voltage Uceo [V]: 50V. Collector current Ic [A], max.: 100mA. RoHS: yes. Component family: PNP transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: A6A. Maximum dissipation Ptot [W]: 0.24W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 1.5A, TO-92, TO-92, 25V. Collector current: 1.5A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 25V. BE diode: no. C(in): 11pF. Cost): 1.5pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 300. Minimum hFE gain: 160. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 40V. Saturation voltage VCE(sat): 0.28V

NPN-Transistor, 0.5A, TO-92, TO-92, 40V. Collector current: 0.5A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 40V. BE diode: no. BE resistor: 4. Cost): 3pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: Class B Push-pull Operation. Pd (Power Dissipation, Max): 0.625W. Spec info: excellent hFE linearity. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, 0.5A, TO-92, TO-92, 40V. Collector current: 0.5A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 40V. BE diode: no. Cost): 95pF. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. Function: Class B Push-pull Operation. Pd (Power Dissipation, Max): 0.625W. Spec info: excellent hFE linearity. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, 2A, TO-92, TO-92M ( 9mm ), 30 v. Collector current: 2A. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. Semiconductor material: silicon. FT: 170 MHz. Function: Medium Power Amplifier. Max hFE gain: 390. Minimum hFE gain: 82. Ic(pulse): 3A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. Spec info: complementary transistor (pair) STD1862. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 30 v. Saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN-Transistor, 15A, TO-3P ( TO-218 SOT-93 ), MT-100 TO-3P-5, 160V. Collector current: 15A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): MT-100 TO-3P-5. Collector/emitter voltage Vceo: 160V. BE diode: no. CE diode: no. Conditioning: plastic tube. Conditioning unit: 30. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: Darlington Transistors for Audio Amplifiers. Max hFE gain: 2000. Minimum hFE gain: 5000. Number of terminals: 5. Temperature: +150°C. Pd (Power Dissipation, Max): 160W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 160V. Saturation voltage VCE(sat): 2V. Vebo: 5V

NPN-Transistor, 0.5A, SOT-223 ( TO-226 ), SOT-223, 600V. Collector current: 0.5A. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Collector/emitter voltage Vceo: 600V. BE diode: no. CE diode: no. Conditioning: roll. Quantity per case: 1. Function: high voltage fast-switching, PNP power transistor. Max hFE gain: 140. Minimum hFE gain: 50. Ic(pulse): 1A. Marking on the case: N9260. Pd (Power Dissipation, Max): 1.6W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Tf (type): 150 ns. Type of transistor: PNP. Maximum saturation voltage VCE(sat): 1V. Vebo: 7V

NPN-Transistor, 1.5A, SOT-223 ( TO-226 ), SOT-223, 400V. Collector current: 1.5A. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Collector/emitter voltage Vceo: 400V. BE diode: no. CE diode: no. Conditioning: roll. Conditioning unit: 1000. Quantity per case: 1. Semiconductor material: silicon. Function: High voltage fast-switching power transistor. Max hFE gain: 32. Minimum hFE gain: 4. Ic(pulse): 3A. Marking on the case: N93003. Number of terminals: 3. Pd (Power Dissipation, Max): 1.6W. RoHS: yes. Spec info: complementary transistor (pair) STN83003. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Operating temperature: -40...+150°C. Saturation voltage VCE(sat): 0.5V. Maximum saturation voltage VCE(sat): 1V

NPN-Transistor, -20V, -1A, TO-92. Collector-Emitter Voltage VCEO: -20V. Collector current: -1A. Housing: TO-92. Type of transistor: PNP transistor. Polarity: PNP. Power: 1W. Max frequency: 65MHz. Applications: Audio

NPN-Transistor, -45V, -1A, TO-92. Collector-Emitter Voltage VCEO: -45V. Collector current: -1A. Housing: TO-92. Type of transistor: PNP transistor. Polarity: PNP. Power: 0.8W. Max frequency: 150MHz. Applications: Audio

NPN-Transistor, 8A, TO-220, TO-220, 100V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. BE diode: no. CE diode: no. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: switching, audio amplifier. Max hFE gain: 20000. Minimum hFE gain: 1000. Ic(pulse): 15A. Note: 10k Ohms (R1), 600 Ohms (R2). Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 80W. RoHS: yes. Spec info: complementary transistor (pair) TIP102. Assembly/installation: PCB through-hole mounting. Technology: Darlington transistor. Type of transistor: PNP. Vcbo: 100V. Saturation voltage VCE(sat): 2V. Vebo: 5V