PNP bipolar transistors

NPN-Transistor, 8A, 400V. Collector current: 8A. Collector/emitter voltage Vceo: 400V. BE diode: no. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. Function: S-L. Pd (Power Dissipation, Max): 80W. Type of transistor: PNP. Vcbo: 450V

NPN-Transistor, PCB soldering, TO-220, TO-220, 400V, 8A. Housing: PCB soldering. Housing: TO-220. Housing (JEDEC standard): TO-220. Collector-emitter voltage Uceo [V]: 400V. Collector current Ic [A], max.: 8A. RoHS: yes. Component family: high voltage PNP transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJE5852G. Maximum dissipation Ptot [W]: 80W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN-Transistor, -80V, -4A, TO-126. Collector-Emitter Voltage VCEO: -80V. Collector current: -4A. Housing: TO-126. Type of transistor: Darlington Power Transistor. Polarity: PNP. Type: Darlington transistor. Power: 40W. Max frequency: 1MHz. DC Collector/Base Gain hFE min.: 750

NPN-Transistor, 15A, TO-264 ( TOP-3L ), TO-264, 260V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Collector/emitter voltage Vceo: 260V. BE diode: no. Cost): 1.7pF. CE diode: no. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: hFE 45(min). Max hFE gain: 150. Minimum hFE gain: 45. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: complementary transistor (pair) MJL3281A. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 260V. Saturation voltage VCE(sat): 3V. Vebo: 5V

NPN-Transistor, 16A, TO-264 ( TOP-3L ), TO–3PBL, 250V. Collector current: 16A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO–3PBL. Collector/emitter voltage Vceo: 250V. BE diode: no. Cost): 500pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: hFE=25 Min @ IC =8Adc. Max hFE gain: 75. Minimum hFE gain: 25. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: complementary transistor (pair) MJL21194. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 400V. Saturation voltage VCE(sat): 1.4V. Vebo: 5V

NPN-Transistor, 15A, TO-264 ( TOP-3L ), TO-264, 350V. Collector current: 15A. Housing: TO-264 ( TOP-3L ). Housing (according to data sheet): TO-264. Collector/emitter voltage Vceo: 350V. BE diode: no. CE diode: no. Conditioning: plastic tube. Conditioning unit: 25. Quantity per case: 1. Semiconductor material: silicon. FT: 35 MHz. Function: Power audio, Low Harmonic Distortion. Max hFE gain: 250. Minimum hFE gain: 50. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 230W. RoHS: yes. Spec info: complementary transistor (pair) MJL4281A. Assembly/installation: PCB through-hole mounting. Technology: Silicon Power Bipolar Transistor. Type of transistor: PNP. Operating temperature: -60...+150°C. Vcbo: 350V. Saturation voltage VCE(sat): 1V. Vebo: 5V

NPN-Transistor, 15A, TO-247, TO-247, 230V. Collector current: 15A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 230V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 30 MHz. Function: Complementary Bipolar Power Transistor. Production date: 201446. Max hFE gain: 200. Minimum hFE gain: 50. Ic(pulse): 25A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: complementary transistor (pair) MJW3281A. Assembly/installation: PCB through-hole mounting. Technology: Power Bipolar Transistor. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 230V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V

NPN-Transistor, 16A, TO-247, TO-247, 250V. Collector current: 16A. Housing: TO-247. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 250V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: Excellent Gain Linearity. Production date: 2015/04. Max hFE gain: 80. Minimum hFE gain: 20. Ic(pulse): 30A. Number of terminals: 3. Pd (Power Dissipation, Max): 200W. RoHS: yes. Spec info: complementary transistor (pair) MJW21196. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 400V. Saturation voltage VCE(sat): 1V. Vebo: 5V

ROHS: Yes. Housing: SOT23. Frequency: 200MHz. Assembly/installation: SMD. Type of transistor: PNP. Polarity: bipolar. Voltage (collector - emitter): 60V. Collector current Ic [A]: 0.6A. Gain hfe: 50...300. Power: 0.25W

NPN-Transistor, PCB soldering (SMD), SOT-23, TO-236, 60V, 800mA. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 800mA. RoHS: yes. Component family: PNP transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 2F. Cutoff frequency ft [MHz]: 200 MHz. Maximum dissipation Ptot [W]: 0.35W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, PCB soldering (SMD), SOT-23, TO-236, 40V, 200mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 40V. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Collector-emitter voltage Uceo [V]: 40V. Collector current Ic [A], max.: 200mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 40V. RoHS: yes. Component family: PNP transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 2A. Cutoff frequency ft [MHz]: 250 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Marking on the case: 2A. Number of terminals: 3. Pd (Power Dissipation, Max): 225mW. Spec info: SMD 2A. Assembly/installation: surface-mounted component (SMD). Tf(max): 75 ns. Tf(min): 35 ns. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.25V. Vebo: 5V

NPN-Transistor, PCB soldering (SMD), SOT-23, 40V, 600mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector-emitter voltage Uceo [V]: 40V. Collector current Ic [A], max.: 600mA. RoHS: yes. Component family: PNP transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 2T. Cutoff frequency ft [MHz]: 200 MHz. Maximum dissipation Ptot [W]: 0.25W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 0.6A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 40V. Collector current: 0.6A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 40V. BE diode: no. CE diode: no. Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 300. Minimum hFE gain: 30. Marking on the case: 2T. Number of terminals: 3. Pd (Power Dissipation, Max): 0.3W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Tf(max): 30 ns. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 40V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V

NPN-Transistor, PCB soldering (SMD), SOT-23, TO-236, 150V, 500mA. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Collector-emitter voltage Uceo [V]: 150V. Collector current Ic [A], max.: 500mA. RoHS: yes. Component family: PNP transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 2L. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, PCB soldering (SMD), SOT-23, TO-236, 60V, 500mA. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 500mA. RoHS: yes. Component family: PNP transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 2GM. Cutoff frequency ft [MHz]: 50 MHz. Maximum dissipation Ptot [W]: 0.250W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, PCB soldering (SMD), SOT-23, TO-236, 80V, 500mA. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 500mA. RoHS: yes. Component family: PNP transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 2GM. Cutoff frequency ft [MHz]: 50 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 0.5A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 300V. Collector current: 0.5A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 300V. BE diode: no. Cost): 170pF. CE diode: no. Conditioning: roll. Conditioning unit: 3000. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: high voltage amplifier transistor (SMD version of the MPSA42 transistor). Max hFE gain: 40. Minimum hFE gain: 25. Note: 2D. Marking on the case: 2D. Equivalents: PMBTA92.215. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. RoHS: yes. Spec info: complementary transistor (pair) MMBTA42. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 300V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN-Transistor, PCB soldering (SMD), SOT-23, TO-236, 300V, 500mA. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Collector-emitter voltage Uceo [V]: 300V. Collector current Ic [A], max.: 500mA. RoHS: yes. Component family: PNP transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 2D. Cutoff frequency ft [MHz]: 50 MHz. Maximum dissipation Ptot [W]: 0.250W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, PCB soldering (SMD), SOT-23, TO-236, 300V, 500mA. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Collector-emitter voltage Uceo [V]: 300V. Collector current Ic [A], max.: 500mA. RoHS: yes. Component family: PNP transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 2D. Cutoff frequency ft [MHz]: 50 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, PCB soldering (SMD), SOT-23, TO-236, 50V, 100mA. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Collector-emitter voltage Uceo [V]: 50V. Collector current Ic [A], max.: 100mA. RoHS: yes. Component family: PNP transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: A6A. Maximum dissipation Ptot [W]: 0.24W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, PCB soldering (SMD), SOT-23, TO-236, 50V, 100mA. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Collector-emitter voltage Uceo [V]: 50V. Collector current Ic [A], max.: 100mA. RoHS: yes. Component family: PNP transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: A6E. Maximum dissipation Ptot [W]: 0.24W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, PCB soldering, TO-92, TO-226AA, 300V, 500mA. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Collector-emitter voltage Uceo [V]: 300V. Collector current Ic [A], max.: 500mA. RoHS: yes. Component family: PNP transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MPSA92. Cutoff frequency ft [MHz]: 50 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 0.5A, TO-92, TO-92AMMO, 80V. Collector current: 0.5A. Housing: TO-92. Housing (according to data sheet): TO-92AMMO. Collector/emitter voltage Vceo: 80V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: NF-TR. Minimum hFE gain: 100. Ic(pulse): 1A. Pd (Power Dissipation, Max): 0.625W. Spec info: complementary transistor (pair) MPSA06. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 80V. Maximum saturation voltage VCE(sat): 0.25V

NPN-Transistor, PCB soldering, TO-92, TO-226AA, 80V, 500mA. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 500mA. RoHS: yes. Component family: PNP transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MPSA56. Cutoff frequency ft [MHz]: 50 MHz. Maximum dissipation Ptot [W]: 0.625W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 0.5A, TO-92, TO-92, 30 v. Collector current: 0.5A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 30 v. BE diode: no. CE diode: no. Darlington transistor?: yes. Quantity per case: 2. Semiconductor material: silicon. FT: 125 MHz. Max hFE gain: 20000. Minimum hFE gain: 5000. Number of terminals: 3. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 30 v. Saturation voltage VCE(sat): 1.5V. Vebo: 10V