PNP bipolar transistors

NPN-Transistor, 0.2A, TO-92, TO-92, 30 v. Collector current: 0.2A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: general purpose. Pd (Power Dissipation, Max): 0.25W. Spec info: KSA642-O. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, 0.15A, 60V. Collector current: 0.15A. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 180 MHz. Pd (Power Dissipation, Max): 0.25W. Type of transistor: PNP

NPN-Transistor, 2A, TO-92, TO-92M ( 9mm ), 30 v. Collector current: 2A. Housing: TO-92. Housing (according to data sheet): TO-92M ( 9mm ). Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Function: 9mm. Number of terminals: 3. Pd (Power Dissipation, Max): 1W. Spec info: Samsung>> STB1277. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 30 v. Vebo: 5V

NPN-Transistor, 0.7A, 80V. Collector current: 0.7A. Collector/emitter voltage Vceo: 80V. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: NF/S. Pd (Power Dissipation, Max): 1W. Spec info: 9mm height. Type of transistor: PNP

NPN-Transistor, 1.5A, TO-220, TO-220, 150V. Collector current: 1.5A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 150V. BE diode: no. Cost): 55pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: TV-HA. Pd (Power Dissipation, Max): 25W. Spec info: complementary transistor (pair) KSC2073. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 150V. Maximum saturation voltage VCE(sat): 1.5V. Vebo: 5V

NPN-Transistor, 50mA, TO-92, TO-92 3L (AMMO), 120V. Collector current: 50mA. Housing: TO-92. Housing (according to data sheet): TO-92 3L (AMMO). Collector/emitter voltage Vceo: 120V. BE diode: no. Cost): 2pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Max hFE gain: 600. Minimum hFE gain: 300. Marking on the case: A992. Equivalents: 2SC992. Number of terminals: 3. Pd (Power Dissipation, Max): 0.5W. RoHS: yes. Spec info: complementary transistor (pair) KSC1845. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -...+150°C. Vcbo: 120V. Saturation voltage VCE(sat): 0.9V. Vebo: 5V

NPN-Transistor, 3A, TO-220FP, TO-220, 60V. Collector current: 3A. Housing: TO-220FP. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 60V. BE diode: no. Cost): 35pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 9 MHz. Max hFE gain: 320. Minimum hFE gain: 150. Marking on the case: B1366-G. Number of terminals: 3. Pd (Power Dissipation, Max): 25W. Spec info: complementary transistor (pair) KSD2012. Assembly/installation: PCB through-hole mounting. Technology: Silicon PNP Triple Diffused Type. Type of transistor: PNP. Operating temperature: -55°C to +150°C. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Maximum saturation voltage VCE(sat): 1V. Vebo: 7V

NPN-Transistor, 1A, 30 v. Collector current: 1A. Collector/emitter voltage Vceo: 30 v. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 110 MHz. Pd (Power Dissipation, Max): 0.8W. Spec info: SAMSUNG. Type of transistor: PNP

NPN-Transistor, 0.6A, TO-92, TO-92, 60V. Collector current: 0.6A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 60V. Cost): 12pF. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Max hFE gain: 300. Minimum hFE gain: 75. Note: pinout E, C, B. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 60V. Saturation voltage VCE(sat): 0.4V. Vebo: 5V

NPN-Transistor, 500mA, TO-92, TO-92 ( Ammo Pack ), 300V. Collector current: 500mA. Housing: TO-92. Housing (according to data sheet): TO-92 ( Ammo Pack ). Collector/emitter voltage Vceo: 300V. BE diode: no. Cost): 6pF. CE diode: no. Conditioning unit: 2000. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: High Voltage Transistor. Max hFE gain: 40. Minimum hFE gain: 25. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.625W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Technology: PNP Epitaxial Silicon Transistor. Type of transistor: PNP. Vcbo: 300V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN-Transistor, 0.1A, 50V. Collector current: 0.1A. Collector/emitter voltage Vceo: 50V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: S. Spec info: 0504-000142. Type of transistor: PNP

NPN-Transistor, 0.1A, TO-92, TO-92, 50V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: SW. Number of terminals: 3. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 50V

NPN-Transistor, 0.1A, TO-92, TO-92, 50V. Collector current: 0.1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. Resistor B: 47. BE diode: no. BE resistor: 47. Cost): 2.5pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: S. Spec info: 12159-301-810. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, 0.15A, TO-92, TO-92, 50V. Collector current: 0.15A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 50V. Resistor B: 10. BE diode: no. BE resistor: 10. Cost): 3.7pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Function: SWITCHING APPLICATION. Max hFE gain: 240. Minimum hFE gain: 120. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 50V. Saturation voltage VCE(sat): 0.1V. Vebo: 5V

NPN-Transistor, 1.5A, 150V. Collector current: 1.5A. Collector/emitter voltage Vceo: 150V. Quantity per case: 1. Semiconductor material: silicon. FT: 4 MHz. Function: insulated package transistor. Pd (Power Dissipation, Max): 20W. Type of transistor: PNP

NPN-Transistor, 1.5A, SOT-89, SOT-89, 30 v. Collector current: 1.5A. Housing: SOT-89. Housing (according to data sheet): SOT-89. Collector/emitter voltage Vceo: 30 v. BE diode: no. Cost): 50pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 120 MHz. Function: general purpose. Max hFE gain: 320. Minimum hFE gain: 100. Pd (Power Dissipation, Max): 1W. Assembly/installation: surface-mounted component (SMD). Technology: 'Epitaxial Planar PNP Transistor'. Type of transistor: PNP. Vcbo: 30 v. Maximum saturation voltage VCE(sat): 2V. Vebo: 5V

NPN-Transistor, 10A, TO-3PF (SOT399, 2-16E3A), TO-3P ( H ) IS, 120V. Collector current: 10A. Housing: TO-3PF (SOT399, 2-16E3A). Housing (according to data sheet): TO-3P ( H ) IS. Collector/emitter voltage Vceo: 120V. BE diode: no. Cost): 280pF. CE diode: no. Conditioning: plastic tube. Conditioning unit: 30. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: High Power Audio Amplifier. Max hFE gain: 160. Minimum hFE gain: 55. Marking on the case: B778. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 80W. Spec info: complementary transistor (pair) KTD998. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 120V. Saturation voltage VCE(sat): 2.5V. Vebo: 5V

NPN-Transistor, PCB soldering, TO-3, TO-204AA, 120V, 30A, TO-3 ( TO-204 ), TO-3, 120V. Housing: PCB soldering. Housing: TO-3. Housing (JEDEC standard): TO-204AA. Collector-emitter voltage Uceo [V]: 120V. Collector current Ic [A], max.: 30A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 120V. RoHS: yes. Component family: Darlington PNP Power Transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJ11015G. Maximum dissipation Ptot [W]: 200W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +200°C. Cutoff frequency ft [MHz]: hFE 1000 (IC=20Adc, VCE=5Vdc). Note: 8k Ohms (R1), 40 Ohms (R2). Number of terminals: 2. Pd (Power Dissipation, Max): 200W. Spec info: complementary transistor (pair) MJ11016. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -55...+200°C. Vcbo: 120V. Saturation voltage VCE(sat): 3V. Vebo: 5V

NPN-Transistor, -60V, -50A. Collector-Emitter Voltage VCEO: -60V. Collector current: -50A. Type of transistor: Darlington Power Transistor. Polarity: PNP. Type: Darlington transistor. Power: 300W

NPN-Transistor, 50A, TO-3 ( TO-204 ), TO-3 ( TO-204 ), 120V. Collector current: 50A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3 ( TO-204 ). Collector/emitter voltage Vceo: 120V. Cost): 300pF. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: hFE 1000 (IC=25Adc, VCE=5Vdc, RBE=1K). Max hFE gain: 18000. Minimum hFE gain: 1000. Ic(pulse): 100A. Pd (Power Dissipation, Max): 300W. RoHS: yes. Spec info: complementary transistor (pair) MJ11032. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 120V. Saturation voltage VCE(sat): 2.5V

NPN-Transistor, PCB soldering, TO-3, TO-204AA, 120V, 50A. Housing: PCB soldering. Housing: TO-3. Housing (JEDEC standard): TO-204AA. Collector-emitter voltage Uceo [V]: 120V. Collector current Ic [A], max.: 50A. RoHS: yes. Component family: Darlington PNP Power Transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: MJ11033G. Maximum dissipation Ptot [W]: 300W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +200°C

ROHS: Yes. Housing: TO3. Frequency: 3MHz. Assembly/installation: THT. Type of transistor: PNP. Polarity: bipolar. Voltage (collector - emitter): 140V. Collector current Ic [A]: 20A. Power: 250W

NPN-Transistor, 20A, TO-3 ( TO-204 ), TO-3, 140V. Collector current: 20A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 140V. RoHS: yes. Resistor B: yes. BE diode: no. BE resistor: 70. C(in): TO-3. Cost): TO-204AA. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 2 MHz. Function: Power Transistor. Max hFE gain: 150. Minimum hFE gain: 25. Ic(pulse): 20A. Number of terminals: 2. Pd (Power Dissipation, Max): 250W. Spec info: complementary transistor (pair) MJ15003. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+200°C. Vcbo: 140V. Saturation voltage VCE(sat): 1V. Vebo: 5V

NPN-Transistor, 15A, TO-3 ( TO-204 ), TO-3, 120V. Collector current: 15A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 120V. BE diode: no. Cost): 360pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 0.8 MHz. Pd (Power Dissipation, Max): 180W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 200V

NPN-Transistor, 15A, TO-3 ( TO-204 ), TO-3, 120V. Collector current: 15A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 120V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 0.8 MHz. Max hFE gain: 70. Minimum hFE gain: 10. Number of terminals: 2. Pd (Power Dissipation, Max): 180W. RoHS: yes. Spec info: complementary transistor (pair) MJ15015. Assembly/installation: PCB through-hole mounting. Tf(max): 6us. Tf(min): 4us. Type of transistor: PNP. Operating temperature: -65...+200°C. Vcbo: 200V. Saturation voltage VCE(sat): 1.1V. Vebo: 7V