PNP bipolar transistors

NPN-Transistor, 16A, TO-3 ( TO-204 ), TO-3, 120V. Collector current: 16A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 120V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 7 MHz. Function: hFE 1000. Pd (Power Dissipation, Max): 150W. Spec info: complementary transistor (pair) BDX67C. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, 4A, 50V. Collector current: 4A. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Pd (Power Dissipation, Max): 36W. Type of transistor: PNP

NPN-Transistor. Quantity per case: 1

NPN-Transistor, 25mA, TO-92, TO-92, 30 v. Collector current: 25mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. Semiconductor material: silicon. FT: 450 MHz. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, 50mA, TO-92, TO-92, 300V. Collector current: 50mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 300V. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 80 MHz. Minimum hFE gain: 40. Ic(pulse): 100mA. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 830mW. Spec info: complementary transistor (pair) BF420. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Type of transistor: PNP. Vcbo: 300V. Saturation voltage VCE(sat): 0.2V. Vebo: 5V

NPN-Transistor, 0.05A, TO-92, TO-92, 250V. Collector current: 0.05A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 250V. Quantity per case: 1. Semiconductor material: silicon. FT: 60 MHz. Function: VIDEO amp.. Minimum hFE gain: 50. Ic(pulse): 100A. Number of terminals: 3. Pd (Power Dissipation, Max): 0.83W. RoHS: yes. Spec info: complementary transistor (pair) BF422. Assembly/installation: PCB through-hole mounting. Technology: 'Triple Diffused Planar Transistor'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 250V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN-Transistor, PCB soldering, TO-92, TO-226AA, 40V, 25mA, TO-92 ( SOT-54 ), 40V. Housing: PCB soldering. Housing: TO-92. Housing (JEDEC standard): TO-226AA. Collector-emitter voltage Uceo [V]: 40V. Collector current Ic [A], max.: 25mA. Housing (according to data sheet): TO-92 ( SOT-54 ). Collector/emitter voltage Vceo: 40V. RoHS: no. Component family: NPN transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BF450. Cutoff frequency ft [MHz]: 350 MHz. Maximum dissipation Ptot [W]: 0.3W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Number of terminals: 3. Pd (Power Dissipation, Max): 300mW. Spec info: feedback capacitance--0.45pF. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 40V. Vebo: 4 v

NPN-Transistor, 25mA, TO-92, TO-92, 40V. Collector current: 25mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 40V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 350 MHz. Function: HF and IF stages in radio receivers. Max hFE gain: 90. Minimum hFE gain: 30. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 300mW. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Vcbo: 40V. Vebo: 4 v

NPN-Transistor, 0.03A, TO-126 (TO-225, SOT-32), TO-126, 300V. Collector current: 0.03A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 300V. Quantity per case: 1. Semiconductor material: silicon. FT: 60 MHz. Pd (Power Dissipation, Max): 2W. Spec info: complementary transistor (pair) BF471. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, 50mA, 30 v. Collector current: 50mA. Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. Semiconductor material: silicon. Type of transistor: PNP

NPN-Transistor, 50mA, 30 v. Collector current: 50mA. Collector/emitter voltage Vceo: 30 v. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. Function: VHF/UHF-V. Type of transistor: PNP

NPN-Transistor, -250V, -0.5A, TO-92. Collector-Emitter Voltage VCEO: -250V. Collector current: -0.5A. Housing: TO-92. Type of transistor: Power Transistor. Polarity: PNP. Power: 0.8W

NPN-Transistor, 0.5A, TO-92, TO-92, 350V. Collector current: 0.5A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 350V. BE diode: no. Cost): 1.6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Max hFE gain: 40. Minimum hFE gain: 25. Pd (Power Dissipation, Max): 0.625W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 350V. Maximum saturation voltage VCE(sat): 2V. Vebo: 6V

NPN-Transistor, 30mA, TO-92, TO-92, 40V. Collector current: 30mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 40V. Quantity per case: 1. Semiconductor material: silicon. FT: 550 MHz. Function: VHF-V. Minimum hFE gain: 25. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 300mW. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 35V. Vebo: 4 v

NPN-Transistor, TO-92, TO-92. Housing: TO-92. Housing (according to data sheet): TO-92. Quantity per case: 1. Assembly/installation: PCB through-hole mounting

NPN-Transistor, 25mA, TO-92, TO-92, 30 v. Collector current: 25mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. Semiconductor material: silicon. FT: 700 MHz. Function: VHF Oscillator. Minimum hFE gain: 30. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 300mW. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 40V. Vebo: 4 v

NPN-Transistor, PCB soldering (SMD), SOT-89, TO-243, 250V, 50mA. Housing: PCB soldering (SMD). Housing: SOT-89. Housing (JEDEC standard): TO-243. Collector-emitter voltage Uceo [V]: 250V. Collector current Ic [A], max.: 50mA. RoHS: no. Component family: PNP power transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: DB. Cutoff frequency ft [MHz]: 60 MHz. Maximum dissipation Ptot [W]: 1.1W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 0.03A, SOT-39, SOT-39, 40V. Collector current: 0.03A. Housing: SOT-39. Housing (according to data sheet): SOT-39. Collector/emitter voltage Vceo: 40V. Quantity per case: 1. Semiconductor material: silicon. FT: 900 MHz. Function: UHF-M/O. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP

NPN-Transistor, 50mA, SOT-23 ( TO-236 ), SOT-23, 300V. Collector current: 50mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Collector/emitter voltage Vceo: 300V. BE diode: no. Cost): 1.6pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 60 MHz. Function: VIDEO amp.. Minimum hFE gain: 50. Ic(pulse): 100mA. Marking on the case: 1W. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Spec info: screen printing/SMD code 1W. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 300V. Saturation voltage VCE(sat): 0.8V

NPN-Transistor, PCB soldering, TO-92, 20V, 25mA. Housing: PCB soldering. Housing: TO-92. Collector-emitter voltage Uceo [V]: 20V. Collector current Ic [A], max.: 25mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.25W

NPN-Transistor. Quantity per case: 1. Function: UHF-V

NPN-Transistor, 30mA, TO-50, TO-50, 40V, SOT-37. Collector current: 30mA. Housing: TO-50. Housing (according to data sheet): TO-50. Collector/emitter voltage Vceo: 40V. Housing: SOT-37. Quantity per case: 1. Semiconductor material: silicon. FT: 900 MHz. Function: UHF-M/O. Pd (Power Dissipation, Max): 0.15W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Type of transistor: Power Transistor. Polarity: PNP. Applications: RF POWER. Max frequency: 900 MHz

NPN-Transistor, 30mA, 20V. Collector current: 30mA. Collector/emitter voltage Vceo: 20V. Quantity per case: 1. Semiconductor material: silicon. Function: UHF-V. Pd (Power Dissipation, Max): 0.2W. Type of transistor: PNP

NPN-Transistor, PCB soldering (SMD), SOT-223, TO-264, 250V, 200mA. Housing: PCB soldering (SMD). Housing: SOT-223. Housing (JEDEC standard): TO-264. Collector-emitter voltage Uceo [V]: 250V. Collector current Ic [A], max.: 200mA. RoHS: no. Component family: PNP power transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BFN37. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 1.5W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN-Transistor, PCB soldering (SMD), SOT-23, TO-236, 12V, 35mA. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Collector-emitter voltage Uceo [V]: 12V. Collector current Ic [A], max.: 35mA. RoHS: yes. Component family: high frequency PNP transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: X1p. Cutoff frequency ft [MHz]: 5GHz. Maximum dissipation Ptot [W]: 0.3W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C