PNP bipolar transistors

NPN-Transistor, 25mA, TO-92, TO-92, 30 v. Collector current: 25mA. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 30 v. Semiconductor material: silicon. FT: 700 MHz. Function: VHF Oscillator. Minimum hFE gain: 30. Temperature: +150°C. Pd (Power Dissipation, Max): 300mW. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 40V. Vebo: 4 v. Number of terminals: 3. Quantity per case: 1

NPN-Transistor, PCB soldering (SMD), SOT-89, TO-243, 250V, 50mA. Housing: PCB soldering (SMD). Housing: SOT-89. Housing (JEDEC standard): TO-243. Collector-emitter voltage Uceo [V]: 250V. Collector current Ic [A], max.: 50mA. RoHS: no. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: DB. Cutoff frequency ft [MHz]: 60 MHz. Maximum dissipation Ptot [W]: 1.1W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP power transistor

NPN-Transistor, 0.03A, SOT-39, SOT-39, 40V. Collector current: 0.03A. Housing: SOT-39. Housing (according to data sheet): SOT-39. Collector/emitter voltage Vceo: 40V. Semiconductor material: silicon. FT: 900 MHz. Function: UHF-M/O. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Quantity per case: 1

NPN-Transistor, 50mA, SOT-23 ( TO-236 ), SOT-23, 300V. Collector current: 50mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Collector/emitter voltage Vceo: 300V. Cost): 1.6pF. Semiconductor material: silicon. FT: 60 MHz. Function: VIDEO amp.. Minimum hFE gain: 50. Ic(pulse): 100mA. Marking on the case: 1W. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 300V. Saturation voltage VCE(sat): 0.8V. Quantity per case: 1. Spec info: screen printing/SMD code 1W. BE diode: no. CE diode: no

NPN-Transistor, PCB soldering, TO-92, 20V, 25mA. Housing: PCB soldering. Housing: TO-92. Collector-emitter voltage Uceo [V]: 20V. Collector current Ic [A], max.: 25mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Maximum dissipation Ptot [W]: 0.25W

NPN-Transistor. Function: UHF-V. Quantity per case: 1

NPN-Transistor, 30mA, TO-50, TO-50, 40V, SOT-37. Collector current: 30mA. Housing: TO-50. Housing (according to data sheet): TO-50. Collector/emitter voltage Vceo: 40V. Housing: SOT-37. Semiconductor material: silicon. FT: 900 MHz. Function: UHF-M/O. Pd (Power Dissipation, Max): 0.15W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Type of transistor: Power Transistor. Polarity: PNP. Applications: RF POWER. Max frequency: 900 MHz. Quantity per case: 1

NPN-Transistor, 30mA, 20V. Collector current: 30mA. Collector/emitter voltage Vceo: 20V. Semiconductor material: silicon. Function: UHF-V. Pd (Power Dissipation, Max): 0.2W. Type of transistor: PNP. Quantity per case: 1

NPN-Transistor, PCB soldering (SMD), SOT-223, TO-264, 250V, 200mA. Housing: PCB soldering (SMD). Housing: SOT-223. Housing (JEDEC standard): TO-264. Collector-emitter voltage Uceo [V]: 250V. Collector current Ic [A], max.: 200mA. RoHS: no. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BFN37. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 1.5W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: PNP power transistor

NPN-Transistor, PCB soldering (SMD), SOT-23, TO-236, 12V, 35mA. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Collector-emitter voltage Uceo [V]: 12V. Collector current Ic [A], max.: 35mA. RoHS: yes. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: X1p. Cutoff frequency ft [MHz]: 5GHz. Maximum dissipation Ptot [W]: 0.3W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Component family: high frequency PNP transistor

NPN-Transistor, 1A, SOT-223 ( TO-226 ), SOT-223, 45V. Collector current: 1A. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Collector/emitter voltage Vceo: 45V. BE resistor: 150 Ohms. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: high DC Current, Relay drivers, Lamp drivers. Max hFE gain: 2000. Minimum hFE gain: 1000. Ic(pulse): 2A. Pd (Power Dissipation, Max): 1.25W. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 60V. Maximum saturation voltage VCE(sat): 1.3V. Vebo: 5V. Spec info: complementary transistor (pair) BSP50. BE diode: no. CE diode: yes

NPN-Transistor, PCB soldering (SMD), SOT-223, TO-261, 80V, 1A. Housing: PCB soldering (SMD). Housing: SOT-223. Housing (JEDEC standard): TO-261. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 1A. RoHS: yes. Component family: Darlington PNP Power Transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BSP62. Cutoff frequency ft [MHz]: 200 MHz. Maximum dissipation Ptot [W]: 1.25W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 0.8A, SOT-23 ( TO-236 ), SOT-23, 60V. Collector current: 0.8A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Collector/emitter voltage Vceo: 60V. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: hFE 50...300. Pd (Power Dissipation, Max): 0.35W. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Vcbo: 60V. Spec info: screen printing/CMS code T8. BE diode: no. CE diode: no

NPN-Transistor. Function: VHR758 EV. Quantity per case: 1. CE diode: yes

NPN-Transistor, 4A, TO-220, TO-220, 50V. Collector current: 4A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 15 MHz. Pd (Power Dissipation, Max): 40W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 70V. Spec info: complementary transistor (pair) CSD1133

NPN-Transistor, 10A, TO-220, TO-220AB, 80V. Collector current: 10A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 80V. Quantity per case: 1. Semiconductor material: silicon. FT: 40 MHz. Max hFE gain: 60. Minimum hFE gain: 40. Ic(pulse): 20A. Equivalents: Fairchild--D45H11TU, KSE45H11TU, ON Semi. Number of terminals: 3. Pd (Power Dissipation, Max): 50W. RoHS: yes. Assembly/installation: PCB through-hole mounting. Tf(max): 100 ns. Tf(min): 100 ns. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 80V. Maximum saturation voltage VCE(sat): 1V. Vebo: 5V. Spec info: pair D44H11. BE diode: no. CE diode: no

NPN-Transistor, PCB soldering, TO-220, TO-220, 80V, 10A. Housing: PCB soldering. Housing: TO-220. Housing (JEDEC standard): TO-220. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 10A. RoHS: yes. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: D45H11G. Cutoff frequency ft [MHz]: 40 MHz. Maximum dissipation Ptot [W]: 70W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP power transistor

NPN-Transistor, 10A, TO-220, TO-220AB, 30 v. Collector current: 10A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. Semiconductor material: silicon. Minimum hFE gain: 70. Ic(pulse): 20A. Number of terminals: 3. Pd (Power Dissipation, Max): 60W. RoHS: no. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 30 v. Vebo: 5V

NPN-Transistor, PCB soldering, TO-220, TO-220, 60V, 10A. Housing: PCB soldering. Housing: TO-220. Housing (JEDEC standard): TO-220. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 10A. RoHS: yes. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: D45H8G. Cutoff frequency ft [MHz]: 40 MHz. Maximum dissipation Ptot [W]: 70W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Component family: PNP power transistor

NPN-Transistor, -80V, -15A, TO–220AB. Collector-Emitter Voltage VCEO: -80V. Collector current: -15A. Housing: TO–220AB. Type of transistor: Power Transistor. Polarity: PNP. Power: 83W. Max frequency: 50 MHz

NPN-Transistor, 50mA, SOT-416 ( 1.6x0.8mm ), 50V. Collector current: 50mA. Housing (according to data sheet): SOT-416 ( 1.6x0.8mm ). Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Ic(pulse): 100mA. Marking on the case: 14. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 150W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Vcbo: 50V. Spec info: screen printing/SMD code 14

NPN-Transistor, 50mA, SOT-23 ( TO-236 ), SOT-23 ( 2.9x1.6mm ), 50V. Collector current: 50mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( 2.9x1.6mm ). Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: Digital Transistor (Bias Resistor Built-in). Ic(pulse): 100mA. Marking on the case: 14. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 200mW. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Vcbo: 50V. Spec info: screen printing/SMD code 14

NPN-Transistor, 0.1A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 50V. Collector current: 0.1A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 250 MHz. Function: Digital transistors (built-in resistors). Marking on the case: 15. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.2W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Spec info: screen printing/SMD code 15. BE diode: no. CE diode: yes

NPN-Transistor, 0.1A, SC-72, SC-72 ( D143 ), 50V. Collector current: 0.1A. Housing: SC-72. Housing (according to data sheet): SC-72 ( D143 ). Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. Type of transistor: PNP

NPN-Transistor, 100mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 50V. Collector current: 100mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 50V. Resistor B: 4.7k Ohms. BE resistor: 47k Ohms. Cost): 3pF. Quantity per case: 1. Semiconductor material: silicon. Function: PNP resistor-equipped transistor. Minimum hFE gain: 100. Ic(pulse): 100mA. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.1V. Vebo: 10V. Spec info: screen printing/SMD code 19. BE diode: no. CE diode: no