PNP bipolar transistors

NPN-Transistor, 4A, 120V. Collector current: 4A. Collector/emitter voltage Vceo: 120V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 10 MHz. Function: NF-L. Note: >750. Pd (Power Dissipation, Max): 40W. Type of transistor: PNP

NPN-Transistor, PCB soldering, TO-220, TO-220, 80V, 10A. Housing: PCB soldering. Housing: TO-220. Housing (JEDEC standard): TO-220. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 10A. RoHS: yes. Component family: PNP power transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD810G. Cutoff frequency ft [MHz]: 1.5 MHz. Maximum dissipation Ptot [W]: 90W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 1A, TO-202, TO-202; SOT128B, 100V. Collector current: 1A. Housing: TO-202. Housing (according to data sheet): TO-202; SOT128B. Collector/emitter voltage Vceo: 100V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 75 MHz. Function: NF-L. Pd (Power Dissipation, Max): 8W. Spec info: complementary transistor (pair) BD829. Type of transistor: PNP

NPN-Transistor, 8A, 100V. Collector current: 8A. Collector/emitter voltage Vceo: 100V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 1 MHz. Function: NF-L. Note: >750. Pd (Power Dissipation, Max): 70W. Spec info: complementary transistor (pair) BD901. Type of transistor: PNP

NPN-Transistor, 15A, 45V. Collector current: 15A. Collector/emitter voltage Vceo: 45V. CE diode: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF/L. Pd (Power Dissipation, Max): 90W. Type of transistor: PNP

NPN-Transistor, 15A, TO-220, TO-220, 100V. Collector current: 15A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. RoHS: yes. Resistor B: yes. BE diode: no. BE resistor: PCB soldering. C(in): TO-220AB. Cost): TO-220AB. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: Power Linear and Switching. Max hFE gain: 250. Minimum hFE gain: 40. Ic(pulse): +150°C. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 90W. Spec info: complementary transistor (pair) BD911. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 100V. Saturation voltage VCE(sat): 1V. Vebo: 5V

NPN-Transistor, 15A, TO-126 (TO-225, SOT-32), TO-225, 100V. Collector current: 15A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-225. Collector/emitter voltage Vceo: 100V. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF/L. Number of terminals: 3. Pd (Power Dissipation, Max): 90W. RoHS: yes. Spec info: complementary transistor (pair) BD911. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, 5A, 45V. Collector current: 5A. Collector/emitter voltage Vceo: 45V. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Pd (Power Dissipation, Max): 40W. Type of transistor: PNP

NPN-Transistor, PCB soldering (SMD), SOT-223, TO-264, 60V, 3A. Housing: PCB soldering (SMD). Housing: SOT-223. Housing (JEDEC standard): TO-264. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 3A. RoHS: yes. Component family: PNP power transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BDP950. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 5W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 12A, TO-220, TO-220, 120V. Collector current: 12A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 120V. BE diode: yes. CE diode: yes. Darlington transistor?: yes. Quantity per case: 2. Semiconductor material: silicon. FT: 10 MHz. Function: NF-L. Max hFE gain: 1500. Minimum hFE gain: 750. Ic(pulse): 20A. Note: 3k Ohms (R1), 45 Ohms (R2). Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 125W. Spec info: complementary transistor (pair) BDT65C. Assembly/installation: PCB through-hole mounting. Technology: Darlington transistor. Tf(max): 2.5us. Tf(min): 0.5us. Type of transistor: PNP. Vcbo: 120V. Saturation voltage VCE(sat): 2V. Vebo: 2.5V

NPN-Transistor, 15A, 100V. Collector current: 15A. Collector/emitter voltage Vceo: 100V. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Pd (Power Dissipation, Max): 125W. Spec info: 130.42144. Type of transistor: PNP

NPN-Transistor, PCB soldering, TO-247, 100V, 10A, TO-247, 100V. Housing: PCB soldering. Housing: TO-247. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 10A. Housing (according to data sheet): TO-247. Collector/emitter voltage Vceo: 100V. RoHS: yes. Component family: Darlington PNP Power Transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BDV64BG. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Cutoff frequency ft [MHz]: 1000. Pd (Power Dissipation, Max): 125W. Spec info: complementary transistor (pair) BDV65B. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 100V. Maximum saturation voltage VCE(sat): 2V. Vebo: 5V

NPN-Transistor, 12A, TO-3P ( TO-218 SOT-93 ), SOT-93, 120V. Collector current: 12A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): SOT-93. Collector/emitter voltage Vceo: 120V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Function: hFE 1000. Pd (Power Dissipation, Max): 125W. Spec info: complementary transistor (pair) BDV65C. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, 12A, TO-3P ( TO-218 SOT-93 ), SOT-93, 120V. Collector current: 12A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): SOT-93. Collector/emitter voltage Vceo: 120V. BE diode: no. CE diode: no. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. Minimum hFE gain: 1000. Ic(pulse): 15A. Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Spec info: complementary transistor (pair) BDV65C. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 120V. Saturation voltage VCE(sat): 2V. Vebo: 5V

NPN-Transistor, PCB soldering, TO-220, TO-220, 100V, 15A. Housing: PCB soldering. Housing: TO-220. Housing (JEDEC standard): TO-220. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 15A. RoHS: yes. Component family: Darlington PNP Power Transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BDW47G. Cutoff frequency ft [MHz]: 4 MHz. Maximum dissipation Ptot [W]: 85W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 15A, TO-3P ( TO-218 SOT-93 ), SOT-93, 100V. Collector current: 15A. Housing: TO-3P ( TO-218 SOT-93 ). Housing (according to data sheet): SOT-93. Collector/emitter voltage Vceo: 100V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 1 MHz. Function: hFE 750 (@3V, 6A). Pd (Power Dissipation, Max): 125W. RoHS: yes. Spec info: complementary transistor (pair) BDW83C. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, PCB soldering, SOT-93, SOT-93, 120V, 15A. Housing: PCB soldering. Housing: SOT-93. Housing (JEDEC standard): SOT-93. Collector-emitter voltage Uceo [V]: 120V. Collector current Ic [A], max.: 15A. RoHS: yes. Component family: Darlington PNP Power Transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BDW84D. Maximum dissipation Ptot [W]: 125W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 15A, TO-3PN ( 2-16C1B ), TO-3PN, 120V. Collector current: 15A. Housing: TO-3PN ( 2-16C1B ). Housing (according to data sheet): TO-3PN. Collector/emitter voltage Vceo: 120V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 1 MHz. Function: hFE 750 (@3V, 6A). Number of terminals: 3. Pd (Power Dissipation, Max): 125W. RoHS: yes. Spec info: complementary transistor (pair) BDW83D. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, PCB soldering, TO-220AB, TO-220AB, 100V, 12A, TO-220, TO-220AB, 100V. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 12A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 100V. RoHS: yes. Component family: PNP Darlington Transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BDW94C. Maximum dissipation Ptot [W]: 80W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C. Cutoff frequency ft [MHz]: complementary transistor (pair) BDW93C. Ic(pulse): 15A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 80W. Spec info: R1 typ.=10k Ohms, R2 typ.=150 Ohms. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 100V. Saturation voltage VCE(sat): 2V

NPN-Transistor, 12A, TO-220FP, TO-220F, 100V. Collector current: 12A. Housing: TO-220FP. Housing (according to data sheet): TO-220F. Collector/emitter voltage Vceo: 100V. Darlington transistor?: yes. Quantity per case: 2. Semiconductor material: silicon. FT: 20 MHz. Function: complementary transistor (pair) BDW93CF. Max hFE gain: 20000. Minimum hFE gain: 100. Ic(pulse): 15A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 33W. RoHS: yes. Spec info: R1 typ.=10k Ohms, R2 typ.=150 Ohms. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 100V. Saturation voltage VCE(sat): 2V

NPN-Transistor, 10A, TO-220, TO-220AB, 100V. Collector current: 10A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 100V. Resistor B: 10k Ohms. BE diode: no. BE resistor: 150 Ohms. CE diode: yes. Darlington transistor?: yes. Quantity per case: 2. Semiconductor material: silicon. FT: 20 MHz. Function: 10k Ohms (R1), 150 Ohms (R2). Max hFE gain: 750. Minimum hFE gain: 100. Ic(pulse): 15A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 70W. Spec info: complementary transistor (pair) BDX33C. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 100V. Saturation voltage VCE(sat): 2.5V. C(in): yes. Cost): -100V

NPN-Transistor, PCB soldering, TO-220, TO-220, 100V, 10A. Housing: PCB soldering. Housing: TO-220. Housing (JEDEC standard): TO-220. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 10A. RoHS: yes. Component family: Darlington PNP Power Transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BDX34CG. Maximum dissipation Ptot [W]: 70W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 8A, TO-220, TO-220AB, 50V. Collector current: 8A. Housing: TO-220. Housing (according to data sheet): TO-220AB. Collector/emitter voltage Vceo: 50V. RoHS: yes. BE diode: no. CE diode: yes. Conditioning: plastic tube. Conditioning unit: 50. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Function: audio amplifier. Production date: 2014/32. Minimum hFE gain: 750. Ic(pulse): 12A. Note: complementary transistor (pair) BDX53C. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 60W. Spec info: R1 typ.=10k Ohms, R2 typ.=150 Ohms. Assembly/installation: PCB through-hole mounting. Technology: Complementary power Darlington transistors. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 100V. Maximum saturation voltage VCE(sat): 2V. Vebo: 5V. Resistor B: Darlington Power Transistor. BE resistor: Darlington transistor. C(in): -100V. Cost): -8A

NPN-Transistor, 8A, TO-220, 160V. Collector current: 8A. Housing: TO-220. Collector/emitter voltage Vceo: 160V. BE diode: no. BE resistor: R1 typ. CE diode: yes. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 20 MHz. Function: Complementary power Darlington transistors. Minimum hFE gain: 750. Ic(pulse): 12A. Pd (Power Dissipation, Max): 60W. Spec info: complementary transistor (pair) BDX53F. Type of transistor: PNP. Vcbo: 160V. Maximum saturation voltage VCE(sat): 2V. Vebo: 5V

NPN-Transistor, 16A, TO-3 ( TO-204 ), TO-3, 120V. Collector current: 16A. Housing: TO-3 ( TO-204 ). Housing (according to data sheet): TO-3. Collector/emitter voltage Vceo: 120V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 7 MHz. Function: hFE 1000. Pd (Power Dissipation, Max): 150W. Spec info: complementary transistor (pair) BDX67C. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP