PNP bipolar transistors

NPN-Transistor, PCB soldering (SMD), SOT-23, 45V, 100mA. Housing: PCB soldering (SMD). Housing: SOT-23. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 100mA. RoHS: no. Component family: PNP bipolar transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BCW69R. Maximum dissipation Ptot [W]: 0.25W

NPN-Transistor, PCB soldering (SMD), SOT-23, TO-236, 45V, 500mA. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 500mA. RoHS: yes. Component family: PNP transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: T1. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 0.8A, SOT-23 ( TO-236 ), SOT-23, 125V. Collector current: 0.8A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23. Collector/emitter voltage Vceo: 125V. BE diode: no. Cost): 12pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: PNP transistor. for AF and switching applications. Max hFE gain: 63. Minimum hFE gain: 25. Ic(pulse): 1A. Marking on the case: DKs. Pd (Power Dissipation, Max): 0.33W. Spec info: complementary transistor (pair) BCX41. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Operating temperature: -65...150°C. Vcbo: 125V. Maximum saturation voltage VCE(sat): 0.9V. Vebo: 5V

NPN-Transistor, PCB soldering (SMD), SOT-23, TO-236, 125V, 800mA. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Collector-emitter voltage Uceo [V]: 125V. Collector current Ic [A], max.: 800mA. RoHS: yes. Component family: PNP transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: DKs. Cutoff frequency ft [MHz]: 150 MHz. Maximum dissipation Ptot [W]: 0.33W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 1A, SOT-89, SOT-89, 45V. Collector current: 1A. Housing: SOT-89. Housing (according to data sheet): SOT-89. Collector/emitter voltage Vceo: 45V. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: NF-TR. Pd (Power Dissipation, Max): 1.3W. Spec info: screen printing/SMD code AA. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP

NPN-Transistor, PCB soldering (SMD), SOT-89, TO-243, 45V, 1A. Housing: PCB soldering (SMD). Housing: SOT-89. Housing (JEDEC standard): TO-243. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 1A. RoHS: yes. Component family: PNP transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: AD. Cutoff frequency ft [MHz]: 50 MHz. Maximum dissipation Ptot [W]: 1.35W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN-Transistor, PCB soldering (SMD), SOT-89, TO-243, 60V, 1A. Housing: PCB soldering (SMD). Housing: SOT-89. Housing (JEDEC standard): TO-243. Collector-emitter voltage Uceo [V]: 60V. Collector current Ic [A], max.: 1A. RoHS: yes. Component family: PNP transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: AM. Cutoff frequency ft [MHz]: 125 MHz. Maximum dissipation Ptot [W]: 1.35W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 1A, SOT-89 4-Pin ( 3+Tab ), SOT-89, 80V. Collector current: 1A. Housing: SOT-89 4-Pin ( 3+Tab ). Housing (according to data sheet): SOT-89. Collector/emitter voltage Vceo: 80V. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: audio amplifiers. Max hFE gain: 250. Minimum hFE gain: 40. Ic(pulse): 1.5A. Marking on the case: AH. Number of terminals: 3. Pd (Power Dissipation, Max): 1.3W. RoHS: yes. Spec info: screen printing/SMD code AH. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN-Transistor, 1A, SOT-89 4-Pin ( 3+Tab ), SOT-89, 80V. Collector current: 1A. Housing: SOT-89 4-Pin ( 3+Tab ). Housing (according to data sheet): SOT-89. Collector/emitter voltage Vceo: 80V. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: audio amplifiers. Max hFE gain: 160. Minimum hFE gain: 63. Ic(pulse): 1.5A. Note: screen printing/SMD code AK. Marking on the case: AK. Number of terminals: 3. Pd (Power Dissipation, Max): 1.3W. RoHS: yes. Spec info: complementary transistor (pair) BCX56-16. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN-Transistor, 1A, SOT-89 4-Pin ( 3+Tab ), SOT-89, 80V. Collector current: 1A. Housing: SOT-89 4-Pin ( 3+Tab ). Housing (according to data sheet): SOT-89. Collector/emitter voltage Vceo: 80V. RoHS: yes. Resistor B: yes. BE diode: PNP transistor. BE resistor: PCB soldering (SMD). C(in): SOT-89. Cost): TO-243. CE diode: surface-mounted component (SMD). Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: audio amplifiers. Max hFE gain: 250. Minimum hFE gain: 160. Ic(pulse): 1.5A. Note: screen printing/SMD code AL. Marking on the case: AL. Number of terminals: 3. Pd (Power Dissipation, Max): 1.3W. Spec info: complementary transistor (pair) BCX56-16. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN-Transistor, PCB soldering (SMD), SOT-89, TO-243, 80V, 1A. Housing: PCB soldering (SMD). Housing: SOT-89. Housing (JEDEC standard): TO-243. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 1A. RoHS: yes. Component family: PNP power transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: AL. Cutoff frequency ft [MHz]: 125 MHz. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 0.1A, TO-39 ( TO-205 ), 64V. Collector current: 0.1A. Housing: TO-39 ( TO-205 ). Collector/emitter voltage Vceo: 64V. Quantity per case: 1. Semiconductor material: silicon. FT: 0.25 MHz. Pd (Power Dissipation, Max): 0.25W. Type of transistor: PNP

NPN-Transistor, 0.1A, 32V. Collector current: 0.1A. Collector/emitter voltage Vceo: 32V. Quantity per case: 1. Semiconductor material: silicon. FT: 180 MHz. Function: NF/S. Pd (Power Dissipation, Max): 0.35W. Type of transistor: PNP

NPN-Transistor, 1.5A, TO-126 (TO-225, SOT-32), TO-126, 45V. Collector current: 1.5A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 45V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Pd (Power Dissipation, Max): 12.5W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP

NPN-Transistor, PCB soldering, TO-126, SOT-32, 80V, 1.5A, TO-126 (TO-225, SOT-32), TO-126, 80V. Housing: PCB soldering. Housing: TO-126. Housing (JEDEC standard): SOT-32. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 1.5A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 80V. RoHS: yes. Component family: PNP power transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD140. Maximum dissipation Ptot [W]: 12.5W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Cutoff frequency ft [MHz]: 250. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 12.5W. Spec info: complementary transistor (pair) BD139. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Vcbo: 80V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN-Transistor, TO-126, 80V, 1.5A, TO-126 (TO-225, SOT-32), TO-126, 80V, -80V, -1.5A. Housing: TO-126. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 1.5A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 80V. Collector-Emitter Voltage VCEO: -80V. Collector current: -1.5A. RoHS: yes. Manufacturer's marking: BD140-16. Maximum dissipation Ptot [W]: 12.5W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Cutoff frequency ft [MHz]: 250. Number of terminals: 3. Pd (Power Dissipation, Max): 12.5W. Spec info: complementary transistor (pair) BD139-16. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 80V. Saturation voltage VCE(sat): 0.5V. Type of transistor: Power Transistor. Polarity: PNP. Power: 12.5W. Max frequency: 50MHz

NPN-Transistor, 1.5A, TO-126 (TO-225, SOT-32), TO-126, 80V. Collector current: 1.5A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 80V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 50 MHz. Function: NF-L. Max hFE gain: 250. Minimum hFE gain: 25. Ic(pulse): 2A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 12.5W. RoHS: yes. Spec info: complementary transistor (pair) BD139. Assembly/installation: PCB through-hole mounting. Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Operating temperature: -55°C to +150°C. Vcbo: 100V. Saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN-Transistor, 1.5A, 45V. Collector current: 1.5A. Collector/emitter voltage Vceo: 45V. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Pd (Power Dissipation, Max): 20W. Type of transistor: PNP

NPN-Transistor, 2A, TO-126 (TO-225, SOT-32), TO-126, 80V. Collector current: 2A. Housing: TO-126 (TO-225, SOT-32). Housing (according to data sheet): TO-126. Collector/emitter voltage Vceo: 80V. RoHS: yes. Resistor B: yes. BE diode: no. BE resistor: PCB soldering. C(in): TO-126. Cost): SOT-32. CE diode: no. Conditioning: plastic tube. Conditioning unit: 50. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: Audio, power linear and switching applications. Max hFE gain: 40. Minimum hFE gain: 25. Ic(pulse): 6A. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 25W. Spec info: complementary transistor (pair) BD237. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 100V. Saturation voltage VCE(sat): 0.6V. Vebo: 5V

NPN-Transistor, PCB soldering, TO-225, TO-225, 80V, 2A. Housing: PCB soldering. Housing: TO-225. Housing (JEDEC standard): TO-225. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 2A. RoHS: yes. Component family: PNP power transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD238G. Cutoff frequency ft [MHz]: 3 MHz. Maximum dissipation Ptot [W]: 25W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN-Transistor, -80V, -2A, TO-126. Collector-Emitter Voltage VCEO: -80V. Collector current: -2A. Housing: TO-126. Type of transistor: Power Transistor. Polarity: PNP. Power: 25W. Max frequency: 3MHz

NPN-Transistor, 2A, TO-220, TO-220, 115V. Collector current: 2A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 115V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3MHz. Function: NF-L. Max hFE gain: 40. Minimum hFE gain: 15. Ic(pulse): 4A. Temperature: +150°C. Pd (Power Dissipation, Max): 30W. RoHS: yes. Spec info: complementary transistor (pair) BD239C. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 100V. Maximum saturation voltage VCE(sat): 0.7V. Vebo: 5V

NPN-Transistor, 5A, TO-220, TO-220, 100V. Collector current: 5A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 3 MHz. Function: NF-L. Max hFE gain: 25. Minimum hFE gain: 10. Ic(pulse): 8A. Number of terminals: 3. Pd (Power Dissipation, Max): 40W. RoHS: yes. Spec info: complementary transistor (pair) BD241C. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 115V. Maximum saturation voltage VCE(sat): 1.2V. Vebo: 5V

NPN-Transistor, PCB soldering, TO-220AB, TO-220AB, 100V, 3A. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 3A. RoHS: yes. Component family: PNP power transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD242CG. Maximum dissipation Ptot [W]: 40W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN-Transistor, PCB soldering, TO-220AB, TO-220AB, 100V, 6A, TO-220, TO-220, 100V. Housing: PCB soldering. Housing: TO-220AB. Housing (JEDEC standard): TO-220AB. Collector-emitter voltage Uceo [V]: 100V. Collector current Ic [A], max.: 6A. Housing: TO-220. Housing (according to data sheet): TO-220. Collector/emitter voltage Vceo: 100V. RoHS: yes. Component family: PNP power transistor. Configuration: PCB through-hole mounting. Number of terminals: 3. Manufacturer's marking: BD244C. Maximum dissipation Ptot [W]: 65W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C. Cutoff frequency ft [MHz]: 15. Pd (Power Dissipation, Max): 65W. Spec info: complementary transistor (pair) BD243C. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 100V. Saturation voltage VCE(sat): 1.5V. Vebo: 5V