PNP bipolar transistors

NPN-Transistor, 100mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 45V. Collector current: 100mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 45V. BE diode: no. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: general purpose. Max hFE gain: 800. Minimum hFE gain: 420. Ic(pulse): 200mA. Marking on the case: 3 G. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Spec info: screen printing/CMS code 3G. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.075V. Vebo: 5V

NPN-Transistor, PCB soldering (SMD), SOT-23, TO-236, 45V, 100mA. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Collector-emitter voltage Uceo [V]: 45V. Collector current Ic [A], max.: 100mA. RoHS: yes. Component family: PNP transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 3G. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.25W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

ROHS: Yes. Housing: SOT23. Frequency: 100MHz, 150MHz. Assembly/installation: SMD. Type of transistor: PNP. Polarity: bipolar. Voltage (collector - emitter): 30V. Collector current Ic [A]: 100mA. Power: 0.25W

NPN-Transistor, PCB soldering (SMD), SOT-23, TO-236, 30 v, 100mA. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Collector-emitter voltage Uceo [V]: 30 v. Collector current Ic [A], max.: 100mA. RoHS: yes. Component family: PNP transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 3G. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.25W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, PCB soldering (SMD), SOT-23, TO-236, 30 v, 100mA. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Collector-emitter voltage Uceo [V]: 30 v. Collector current Ic [A], max.: 100mA. RoHS: yes. Component family: PNP transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 3L. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 100mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 30 v. Collector current: 100mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: general purpose. Max hFE gain: 475. Minimum hFE gain: 220. Ic(pulse): 200mA. Marking on the case: 3F. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Spec info: SMD 3F. Assembly/installation: surface-mounted component (SMD). Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 30 v. Saturation voltage VCE(sat): 0.3V. Vebo: 5V

NPN-Transistor, 100mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 30 v. Collector current: 100mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 30 v. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: general purpose. Max hFE gain: 800. Minimum hFE gain: 420. Ic(pulse): 200mA. Marking on the case: 3 G. Number of terminals: 3. Pd (Power Dissipation, Max): 0.25W. RoHS: yes. Spec info: screen printing/SMD code 3G/4C. Assembly/installation: surface-mounted component (SMD). Technology: 'Epitaxial Planar Transistor'. Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 30 v. Saturation voltage VCE(sat): 0.3V. Vebo: 5V

NPN-Transistor, PCB soldering (SMD), SOT-23, TO-236, 30 v, 100mA. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Collector-emitter voltage Uceo [V]: 30 v. Collector current Ic [A], max.: 100mA. RoHS: no. Component family: PNP transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: 4C. Cutoff frequency ft [MHz]: 100 MHz. Maximum dissipation Ptot [W]: 0.225W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 0.1A, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 45V. Collector current: 0.1A. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 45V. BE diode: no. C(in): 10pF. Cost): 4.5pF. CE diode: no. Darlington transistor?: no. Quantity per case: 1. Semiconductor material: silicon. FT: 100 MHz. Function: general purpose. Max hFE gain: 800. Minimum hFE gain: 420. Note: complementary transistor (pair) BC850C. Marking on the case: 4g. Number of terminals: 3. RoHS: yes. Spec info: screen printing/SMD code 4G. Assembly/installation: surface-mounted component (SMD). Power: 0.25W. Type of transistor: PNP. Operating temperature: -68...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.075V. Maximum saturation voltage VCE(sat): 0.65V. Vebo: 5V

NPN-Transistor, PCB soldering (SMD), SOT-89, 20V, 2A. Housing: PCB soldering (SMD). Housing: SOT-89. Collector-emitter voltage Uceo [V]: 20V. Collector current Ic [A], max.: 2A. RoHS: yes. Component family: PNP transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: CEC. Cutoff frequency ft [MHz]: 140 MHz. Maximum dissipation Ptot [W]: 1.35W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 1A, TO-92, TO-92, 45V. Collector current: 1A. Housing: TO-92. Housing (according to data sheet): TO-92. Collector/emitter voltage Vceo: 45V. Darlington transistor?: yes. Quantity per case: 1. Semiconductor material: silicon. FT: 200 MHz. Function: NF/S. Max hFE gain: 2000. Minimum hFE gain: 1000. Number of terminals: 3. Temperature: +150°C. Pd (Power Dissipation, Max): 0.8W. Assembly/installation: PCB through-hole mounting. Type of transistor: PNP. Vcbo: 60V. Saturation voltage VCE(sat): 1.3V. Vebo: 5V

NPN-Transistor, 1A, SOT-223 ( TO-226 ), SOT-223, 45V. Collector current: 1A. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Collector/emitter voltage Vceo: 45V. BE diode: no. Cost): 15pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 145 MHz. Function: Audio, telephony and automotive applications. Max hFE gain: 250. Minimum hFE gain: 100. Ic(pulse): 2A. Marking on the case: BCP51/16. Number of terminals: 3. Pd (Power Dissipation, Max): 1.35W. RoHS: yes. Spec info: complementary transistor (pair) BCP54-16. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 45V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN-Transistor, 1A, SOT-223 ( TO-226 ), SOT-223, 60V. Collector current: 1A. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Collector/emitter voltage Vceo: 60V. BE diode: no. Cost): 15pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 145 MHz. Function: Audio, telephony and automotive applications. Max hFE gain: 250. Minimum hFE gain: 100. Ic(pulse): 2A. Marking on the case: BCP52/16. Number of terminals: 3. Pd (Power Dissipation, Max): 1.35W. RoHS: yes. Spec info: complementary transistor (pair) BCP55-16. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Operating temperature: -55...+150°C. Vcbo: 60V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN-Transistor, PCB soldering (SMD), SOT-223, TO-264, 80V, 1A. Housing: PCB soldering (SMD). Housing: SOT-223. Housing (JEDEC standard): TO-264. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 1A. RoHS: yes. Component family: PNP power transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BCP53-10. Cutoff frequency ft [MHz]: 120 MHz. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +155°C

NPN-Transistor, PCB soldering (SMD), SOT-223, TO-261, 80V, 1.5A. Housing: PCB soldering (SMD). Housing: SOT-223. Housing (JEDEC standard): TO-261. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 1.5A. RoHS: yes. Component family: PNP power transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: AH-10. Cutoff frequency ft [MHz]: 50 MHz. Maximum dissipation Ptot [W]: 1.5W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 1A, SOT-223 ( TO-226 ), SOT-223, 80V. Collector current: 1A. Housing: SOT-223 ( TO-226 ). Housing (according to data sheet): SOT-223. Collector/emitter voltage Vceo: 80V. BE diode: no. Cost): 25pF. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150MHz. Function: Audio, telephony and automotive applications. Max hFE gain: 250. Minimum hFE gain: 100. Ic(pulse): 2A. Marking on the case: BCP 5316. Number of terminals: 3. Pd (Power Dissipation, Max): 2W. RoHS: yes. Spec info: complementary transistor (pair) BCP56-16. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 100V. Maximum saturation voltage VCE(sat): 0.5V. Vebo: 5V

NPN-Transistor, PCB soldering (SMD), SOT-223, TO-261, 80V, 1A. Housing: PCB soldering (SMD). Housing: SOT-223. Housing (JEDEC standard): TO-261. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 1A. RoHS: yes. Component family: PNP power transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: AH. Cutoff frequency ft [MHz]: 50 MHz. Maximum dissipation Ptot [W]: 1.5W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN-Transistor, PCB soldering (SMD), SOT-223, TO-264, 80V, 1A. Housing: PCB soldering (SMD). Housing: SOT-223. Housing (JEDEC standard): TO-264. Collector-emitter voltage Uceo [V]: 80V. Collector current Ic [A], max.: 1A. RoHS: yes. Component family: PNP power transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BCP56-10. Cutoff frequency ft [MHz]: 120 MHz. Maximum dissipation Ptot [W]: 2W. Operating temperature range min (°C): -55°C. Operating temperature range max (°C): +155°C

NPN-Transistor, PCB soldering (SMD), SOT-223, TO-261, 20V, 2A. Housing: PCB soldering (SMD). Housing: SOT-223. Housing (JEDEC standard): TO-261. Collector-emitter voltage Uceo [V]: 20V. Collector current Ic [A], max.: 2A. RoHS: yes. Component family: PNP transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BCP69/25. Cutoff frequency ft [MHz]: 140 MHz. Maximum dissipation Ptot [W]: 1.35W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN-Transistor, PCB soldering (SMD), SOT-223, TO-261, 20V, 2A. Housing: PCB soldering (SMD). Housing: SOT-223. Housing (JEDEC standard): TO-261. Collector-emitter voltage Uceo [V]: 20V. Collector current Ic [A], max.: 2A. RoHS: no. Component family: PNP transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: BCP69. Cutoff frequency ft [MHz]: 140 MHz. Maximum dissipation Ptot [W]: 1.35W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 500mA, SOT-23 ( TO-236 ), SOT-23 ( TO236 ), 50V. Collector current: 500mA. Housing: SOT-23 ( TO-236 ). Housing (according to data sheet): SOT-23 ( TO236 ). Collector/emitter voltage Vceo: 50V. Resistor B: 4.7k Ohms. BE diode: no. BE resistor: 4.7k Ohms. CE diode: no. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Function: PNP Silicon Digital Transistor. Minimum hFE gain: 50. Marking on the case: XUs. Number of terminals: 3. Pd (Power Dissipation, Max): 0.33W. RoHS: yes. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP. Operating temperature: -65...+150°C. Vcbo: 50V. Saturation voltage VCE(sat): 0.3V

NPN-Transistor, PCB soldering (SMD), SOT-23, TO-236, 50V, 500mA. Housing: PCB soldering (SMD). Housing: SOT-23. Housing (JEDEC standard): TO-236. Collector-emitter voltage Uceo [V]: 50V. Collector current Ic [A], max.: 500mA. RoHS: yes. Component family: PNP transistor. Configuration: surface-mounted component (SMD). Number of terminals: 3. Manufacturer's marking: XHs. Cutoff frequency ft [MHz]: 150 MHz. Maximum dissipation Ptot [W]: 0.33W. Operating temperature range min (°C): -65°C. Operating temperature range max (°C): +150°C

NPN-Transistor, 100mA, SOT-143, SOT-143, 30 v. Collector current: 100mA. Housing: SOT-143. Housing (according to data sheet): SOT-143. Collector/emitter voltage Vceo: 30 v. BE diode: no. CE diode: no. Quantity per case: 1. FT: 250 MHz. Function: PNP Silicon Dual Transistor. Max hFE gain: 800. Minimum hFE gain: 420. Marking on the case: 3Ls. Number of terminals: 4. RoHS: yes. Spec info: screen printing/SMD code 3Ls. Assembly/installation: surface-mounted component (SMD). Type of transistor: PNP & PNP. Vcbo: 30 v

NPN-Transistor, 0.1A, 32V. Collector current: 0.1A. Collector/emitter voltage Vceo: 32V. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Max hFE gain: 500. Minimum hFE gain: 250. Note: screen printing/SMD code C2. Marking on the case: C2. Pd (Power Dissipation, Max): 300mW. Type of transistor: PNP. Vcbo: 32V. Maximum saturation voltage VCE(sat): 0.3V. Vebo: 5V

NPN-Transistor, 0.1A, 50V. Collector current: 0.1A. Collector/emitter voltage Vceo: 50V. Quantity per case: 1. Semiconductor material: silicon. FT: 150 MHz. Note: >120. Type of transistor: PNP